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Class Information
Number: 257/550
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With pn junction isolation > With lightly doped surface layer of one conductivity type on substrate of opposite conductivity type, having plural heavily doped portions of the one conductivity type between the layer and substrate, different ones of the heavily doped portions having differing depths or physical extent
Description: Subject matter wherein the junction isolation is formed in an integrated circuit with a lightly doped surface layer of one conductivity type on substrate of opposite conductivity type, having plural heavily doped portions of the one conductivity type between the layer and substrate, different ones of the heavily doped portions having differing depths or physical extent.










Patents under this class:
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Patent Number Title Of Patent Date Issued
5563437 Semiconductor device having a large sense voltage Oct. 8, 1996
5561316 Epitaxial silicon starting material Oct. 1, 1996
5557139 Buried base vertical bipolar power transistor with improved current gain and operation area Sep. 17, 1996
5543653 Bipolar and BiCMOS structures Aug. 6, 1996
5495123 Structure to protect against below ground current injection Feb. 27, 1996
5495124 Semiconductor device with increased breakdown voltage Feb. 27, 1996
5350939 Semiconductor device and method of manufacturing thereof Sep. 27, 1994
5304830 Semiconductor integrated circuit device for BI-CMOS configuration free from noises on power voltage lines Apr. 19, 1994
5206535 Semiconductor device structure Apr. 27, 1993
5177587 Push-back junction isolation semiconductor structure and method Jan. 5, 1993
5122855 Semiconductor device with latch-up prevention structure Jun. 16, 1992
4835596 Transistor with a high collector-emitter breakthrough voltage May. 30, 1989
4819049 Method of fabricating high voltage and low voltage transistors using an epitaxial layer of uniform thickness Apr. 4, 1989
4694321 Semiconductor device having bipolar transistor and integrated injection logic Sep. 15, 1987
4672416 Semiconductor device Jun. 9, 1987
4654688 Semiconductor device having a transistor with increased current amplification factor Mar. 31, 1987
4536784 Semiconductor device having a junction capacitance, an integrated injection logic circuit and a transistor in a semiconductor body Aug. 20, 1985
4505766 Method of fabricating a semiconductor device utilizing simultaneous outdiffusion and epitaxial deposition Mar. 19, 1985
4400713 Matrix array of semiconducting elements Aug. 23, 1983
4202006 Semiconductor integrated circuit device May. 6, 1980
4170501 Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition Oct. 9, 1979
4021270 Double master mask process for integrated circuit manufacture May. 3, 1977

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