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Class Information
Number: 257/550
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With pn junction isolation > With lightly doped surface layer of one conductivity type on substrate of opposite conductivity type, having plural heavily doped portions of the one conductivity type between the layer and substrate, different ones of the heavily doped portions having differing depths or physical extent
Description: Subject matter wherein the junction isolation is formed in an integrated circuit with a lightly doped surface layer of one conductivity type on substrate of opposite conductivity type, having plural heavily doped portions of the one conductivity type between the layer and substrate, different ones of the heavily doped portions having differing depths or physical extent.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8587027 Field effect transistor, method of manufacturing the same, and semiconductor device Nov. 19, 2013
8304827 Semiconductor device having on a substrate a diode formed by making use of a DMOS structure Nov. 6, 2012
8283231 finFET drive strength modification Oct. 9, 2012
8106466 MOS transistor and method for fabricating the same Jan. 31, 2012
8084844 Semiconductor device Dec. 27, 2011
8084791 Non-volatile memory device including nitrogen pocket implants and methods for making the same Dec. 27, 2011
8072043 Semiconductor component Dec. 6, 2011
7939897 Method of forming a low resistance semiconductor contact and structure therefor May. 10, 2011
7923756 Metal oxide semiconductor (MOS) device comprising a buried region under drain Apr. 12, 2011
7763956 Semiconductor and method for manufacturing the same Jul. 27, 2010
7741699 Semiconductor device having ultra-shallow and highly activated source/drain extensions Jun. 22, 2010
7560797 Semiconductor device and manufacturing method of the same Jul. 14, 2009
7449744 Non-volatile electrically alterable memory cell and use thereof in multi-function memory array Nov. 11, 2008
7432581 Semiconductor device, method of manufacture thereof and semiconductor integrated circuit Oct. 7, 2008
7202527 MOS transistor and ESD protective device each having a settable voltage ratio of the lateral breakdown voltage to the vertical breakdown voltage Apr. 10, 2007
7064413 Fin-type resistors Jun. 20, 2006
7002222 Integrated semiconductor memory circuit and method of manufacturing the same Feb. 21, 2006
7002218 Low capacitance ESD-protection structure under a bond pad Feb. 21, 2006
6940110 SiC-MISFET and method for fabricating the same Sep. 6, 2005
6864559 Semiconductor memory device Mar. 8, 2005
6770950 Non-volatile semiconductor memory structure Aug. 3, 2004
6762461 Semiconductor element protected with a plurality of zener diodes Jul. 13, 2004
6740958 Semiconductor memory device May. 25, 2004
6730959 Structure of flash memory device and fabrication method thereof May. 4, 2004
6707115 Transistor with minimal hot electron injection Mar. 16, 2004
6614067 Design and process for a dual gate structure Sep. 2, 2003
6563181 High frequency signal isolation in a semiconductor device May. 13, 2003
6504230 Compensation component and method for fabricating the compensation component Jan. 7, 2003
6501147 Process for manufacturing electronic devices comprising high voltage MOS transistors, and electronic device thus obtained Dec. 31, 2002
6492679 Method for manufacturing a high voltage MOSFET device with reduced on-resistance Dec. 10, 2002
6480639 Optical module Nov. 12, 2002
6426535 Semiconductor device having improved short channel resistance Jul. 30, 2002
6388298 Detached drain MOSFET May. 14, 2002
6376870 Low voltage transistors with increased breakdown voltage to substrate Apr. 23, 2002
6281521 Silicon carbide horizontal channel buffered gate semiconductor devices Aug. 28, 2001
6274909 Guard ring structure with deep N well on ESD devices Aug. 14, 2001
6194776 Semiconductor circuit device having triple-well structure in semiconductor substrate, method of fabricating the same, and mask device for fabrication of the same Feb. 27, 2001
6168983 Method of making a high-voltage transistor with multiple lateral conduction layers Jan. 2, 2001
6064077 Integrated circuit transistor May. 16, 2000
6028342 ROM diode and a method of making the same Feb. 22, 2000
5942783 Semiconductor device having improved latch-up protection Aug. 24, 1999
5892268 Inductive load driving and control circuits inside isolation regions Apr. 6, 1999
5834807 Nonvolatile memory device having an improved integration and reduced contact failure Nov. 10, 1998
5777375 Semiconductor device improved in a structure of an L-PNP transistor Jul. 7, 1998
5726469 Surface voltage sustaining structure for semiconductor devices Mar. 10, 1998
5623159 Integrated circuit isolation structure for suppressing high-frequency cross-talk Apr. 22, 1997
5610421 Integrated circuit with EPROM cells Mar. 11, 1997
RE35442 Mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof Feb. 4, 1997
5567978 High voltage, junction isolation semiconductor device having dual conductivity tape buried regions and its process of manufacture Oct. 22, 1996
5565701 Integrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistors Oct. 15, 1996

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