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Class Information
Number: 257/55
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Amorphous semiconductor material > Responsive to nonelectrical external signals (e.g., light) > Amorphous semiconductor is alloy or contains material to change band gap (e.g., si x ge 1-x , sin y )
Description: Subject matter wherein the amorphous semiconductor is an alloy or contains material to change the band gap of the amorphous semiconductor material (e.g., Six
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7420207 |
Photo-detecting device and related method of formation |
Sep. 2, 2008 |
| 7417248 |
Transistor with shallow germanium implantation region in channel |
Aug. 26, 2008 |
| 7361420 |
Structure, magnetic recording medium, and method of producing the same |
Apr. 22, 2008 |
| 7339188 |
Polycrystalline silicon film containing Ni |
Mar. 4, 2008 |
| 7335950 |
Semiconductor device and method of making thereof |
Feb. 26, 2008 |
| 7303949 |
High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture |
Dec. 4, 2007 |
| 7271333 |
Apparatus and method of production of thin film photovoltaic modules |
Sep. 18, 2007 |
| 7262428 |
Strained Si/SiGe/SOI islands and processes of making same |
Aug. 28, 2007 |
| 7214971 |
Semiconductor light-receiving device |
May. 8, 2007 |
| 7202511 |
Near-infrared visible light photon counter |
Apr. 10, 2007 |
| 7196351 |
Forming phase change memories |
Mar. 27, 2007 |
| 7176504 |
SiGe MOSFET with an erosion preventing Si.sub.x1Ge.sub.y1 layer |
Feb. 13, 2007 |
| 7164150 |
Photovoltaic device and manufacturing method thereof |
Jan. 16, 2007 |
| 7157349 |
Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation material |
Jan. 2, 2007 |
| 7145175 |
Semiconductor circuit and method of fabricating the same |
Dec. 5, 2006 |
| 7138668 |
Heterojunction diode with reduced leakage current |
Nov. 21, 2006 |
| 7115925 |
Image sensor and pixel having an optimized floating diffusion |
Oct. 3, 2006 |
| 7102185 |
Lightshield architecture for interline transfer image sensors |
Sep. 5, 2006 |
| 7015507 |
Thin film transistor and method of fabricating the same |
Mar. 21, 2006 |
| 6984847 |
Dual panel type organic electroluminescent device and method of fabricating the same |
Jan. 10, 2006 |
| 6960789 |
Layout of a thin film transistor and the forming method thereof |
Nov. 1, 2005 |
| 6951689 |
Substrate with transparent conductive layer, and photovoltaic element |
Oct. 4, 2005 |
| 6940089 |
Semiconductor device structure |
Sep. 6, 2005 |
| 6930326 |
Semiconductor circuit and method of fabricating the same |
Aug. 16, 2005 |
| 6927417 |
Photoelectric conversion element and method of manufacturing the same |
Aug. 9, 2005 |
| 6921914 |
Process for producing semiconductor article using graded epitaxial growth |
Jul. 26, 2005 |
| 6903372 |
Semiconductor device, method of making the same and liquid crystal display device |
Jun. 7, 2005 |
| 6872972 |
Method for forming silicon film with changing grain size by thermal process |
Mar. 29, 2005 |
| 6856002 |
Graded GexSe100-x concentration in PCRAM |
Feb. 15, 2005 |
| 6838695 |
CMOS device structure with improved PFET gate electrode |
Jan. 4, 2005 |
| 6838713 |
Dual-height cell with variable width power rail architecture |
Jan. 4, 2005 |
| 6831333 |
Semiconductor device and method of making thereof |
Dec. 14, 2004 |
| 6815802 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Nov. 9, 2004 |
| 6787793 |
Strained Si device with first SiGe layer with higher Ge concentration being relaxed to have substantially same lattice constant as second SiGe layer with lower Ge concentration |
Sep. 7, 2004 |
| 6770912 |
Semiconductor device and method for producing the same |
Aug. 3, 2004 |
| 6759712 |
Semiconductor-on-insulator thin film transistor constructions |
Jul. 6, 2004 |
| 6750394 |
Thin-film solar cell and its manufacturing method |
Jun. 15, 2004 |
| 6734499 |
Operation method of semiconductor devices |
May. 11, 2004 |
| 6734455 |
Agglomeration elimination for metal sputter deposition of chalcogenides |
May. 11, 2004 |
| 6720583 |
Optical device, surface emitting type device and method for manufacturing the same |
Apr. 13, 2004 |
| 6710382 |
Semiconductor device and method for fabricating the same |
Mar. 23, 2004 |
| 6690072 |
Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device |
Feb. 10, 2004 |
| 6690026 |
Method of fabricating a three-dimensional array of active media |
Feb. 10, 2004 |
| 6670687 |
Semiconductor device having silicon carbide layer of predetermined conductivity type and module device having the same |
Dec. 30, 2003 |
| 6670657 |
Integrated circuit having photodiode device and associated fabrication process |
Dec. 30, 2003 |
| 6670638 |
Liquid crystal display element and method of manufacturing the same |
Dec. 30, 2003 |
| 6667240 |
Method and apparatus for forming deposited film |
Dec. 23, 2003 |
| 6664566 |
Photoelectric conversion device and method of making the same |
Dec. 16, 2003 |
| 6621131 |
Semiconductor transistor having a stressed channel |
Sep. 16, 2003 |
| 6562703 |
Molecular hydrogen implantation method for forming a relaxed silicon germanium layer with high germanium content |
May. 13, 2003 |
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