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Class Information
Number: 257/549
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With pn junction isolation > With substrate and lightly doped surface layer of same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit)
Description: Subject matter wherein the junction isolation is formed in an integrated circuit with a substrate and lightly doped surface layer of the same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit).

Patents under this class:
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Patent Number Title Of Patent Date Issued
8455981 Doped graphene electronic materials Jun. 4, 2013
8106466 MOS transistor and method for fabricating the same Jan. 31, 2012
8106480 Bipolar device having improved capacitance Jan. 31, 2012
8084844 Semiconductor device Dec. 27, 2011
8068157 Image sensor with wide operating range Nov. 29, 2011
8022496 Semiconductor structure and method of manufacture Sep. 20, 2011
7994032 Method of making deep junction for electrical crosstalk reduction of an image sensor Aug. 9, 2011
7898060 Isolation structures for integrated circuits Mar. 1, 2011
7791170 Method of making a deep junction for electrical crosstalk reduction of an image sensor Sep. 7, 2010
7776700 LDMOS device and method Aug. 17, 2010
7671384 Semiconductor integrated circuit device having improved punch-through resistance and production method thereof, semiconductor integrated circuit device including a low-voltage transistor and a Mar. 2, 2010
7667288 Systems and methods for voltage distribution via epitaxial layers Feb. 23, 2010
7622741 Semiconductor device and method for manufacturing same Nov. 24, 2009
7560797 Semiconductor device and manufacturing method of the same Jul. 14, 2009
7355259 Photodiode array and optical receiver device including the same Apr. 8, 2008
7202527 MOS transistor and ESD protective device each having a settable voltage ratio of the lateral breakdown voltage to the vertical breakdown voltage Apr. 10, 2007
7026704 Semiconductor device for reducing plasma charging damage Apr. 11, 2006
7002222 Integrated semiconductor memory circuit and method of manufacturing the same Feb. 21, 2006
6953981 Semiconductor device with deep substrates contacts Oct. 11, 2005
6897536 ESD protection circuit May. 24, 2005
6867476 Vertical double diffused MOSFET and method of fabricating the same Mar. 15, 2005
6847094 Contact structure on a deep region formed in a semiconductor substrate Jan. 25, 2005
6838745 Semiconductor device having a separation structure for high withstand voltage Jan. 4, 2005
6835992 Closely-spaced VCSEL and photodetector for applications requiring their independent operation Dec. 28, 2004
6809790 Matrix substrate, liquid crystal display device using it, and method for producing the matrix substrate Oct. 26, 2004
6784493 Line self protecting multiple output power IC architecture Aug. 31, 2004
6710427 Distributed power device with dual function minority carrier reduction Mar. 23, 2004
6707115 Transistor with minimal hot electron injection Mar. 16, 2004
6664608 Back-biased MOS device Dec. 16, 2003
6664607 Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof Dec. 16, 2003
6653708 Complementary metal oxide semiconductor with improved single event performance Nov. 25, 2003
6636402 High voltage protection circuit Oct. 21, 2003
6627928 Method of manufacturing an integrated circuit, for integrating an electrically programmable, non-volatile memory and high-performance logic circuitry in the same semiconductor chip Sep. 30, 2003
6614087 Semiconductor device Sep. 2, 2003
6614067 Design and process for a dual gate structure Sep. 2, 2003
6600188 EEPROM with a neutralized doping at tunnel window edge Jul. 29, 2003
6580149 Double LDD devices for improved DRAM refresh Jun. 17, 2003
6573582 Semiconductor device Jun. 3, 2003
6563181 High frequency signal isolation in a semiconductor device May. 13, 2003
6504230 Compensation component and method for fabricating the compensation component Jan. 7, 2003
6469365 Semiconductor component with a structure for avoiding parallel-path currents and method for fabricating a semiconductor component Oct. 22, 2002
6426535 Semiconductor device having improved short channel resistance Jul. 30, 2002
6420774 Low junction capacitance semiconductor structure and I/O buffer Jul. 16, 2002
6388298 Detached drain MOSFET May. 14, 2002
6288424 Semiconductor device having LDMOS transistors and a screening layer Sep. 11, 2001
6255713 Current source using merged vertical bipolar transistor based on gate induced gate leakage current Jul. 3, 2001
6255697 Integrated circuit devices including distributed and isolated dummy conductive regions Jul. 3, 2001
6249039 Integrated inductive components and method of fabricating such components Jun. 19, 2001
6160304 Semiconductor device comprising a half-bridge circuit Dec. 12, 2000
6150699 Tri-voltage Bi-CMOS semiconductor device Nov. 21, 2000

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