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Class Information
Number: 257/549
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With pn junction isolation > With substrate and lightly doped surface layer of same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit)
Description: Subject matter wherein the junction isolation is formed in an integrated circuit with a substrate and lightly doped surface layer of the same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7355259 |
Photodiode array and optical receiver device including the same |
Apr. 8, 2008 |
| 7202527 |
MOS transistor and ESD protective device each having a settable voltage ratio of the lateral breakdown voltage to the vertical breakdown voltage |
Apr. 10, 2007 |
| 7026704 |
Semiconductor device for reducing plasma charging damage |
Apr. 11, 2006 |
| 7002222 |
Integrated semiconductor memory circuit and method of manufacturing the same |
Feb. 21, 2006 |
| 6953981 |
Semiconductor device with deep substrates contacts |
Oct. 11, 2005 |
| 6897536 |
ESD protection circuit |
May. 24, 2005 |
| 6867476 |
Vertical double diffused MOSFET and method of fabricating the same |
Mar. 15, 2005 |
| 6847094 |
Contact structure on a deep region formed in a semiconductor substrate |
Jan. 25, 2005 |
| 6838745 |
Semiconductor device having a separation structure for high withstand voltage |
Jan. 4, 2005 |
| 6835992 |
Closely-spaced VCSEL and photodetector for applications requiring their independent operation |
Dec. 28, 2004 |
| 6809790 |
Matrix substrate, liquid crystal display device using it, and method for producing the matrix substrate |
Oct. 26, 2004 |
| 6784493 |
Line self protecting multiple output power IC architecture |
Aug. 31, 2004 |
| 6710427 |
Distributed power device with dual function minority carrier reduction |
Mar. 23, 2004 |
| 6707115 |
Transistor with minimal hot electron injection |
Mar. 16, 2004 |
| 6664607 |
Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof |
Dec. 16, 2003 |
| 6664608 |
Back-biased MOS device |
Dec. 16, 2003 |
| 6653708 |
Complementary metal oxide semiconductor with improved single event performance |
Nov. 25, 2003 |
| 6636402 |
High voltage protection circuit |
Oct. 21, 2003 |
| 6627928 |
Method of manufacturing an integrated circuit, for integrating an electrically programmable, non-volatile memory and high-performance logic circuitry in the same semiconductor chip |
Sep. 30, 2003 |
| 6614067 |
Design and process for a dual gate structure |
Sep. 2, 2003 |
| 6614087 |
Semiconductor device |
Sep. 2, 2003 |
| 6600188 |
EEPROM with a neutralized doping at tunnel window edge |
Jul. 29, 2003 |
| 6580149 |
Double LDD devices for improved DRAM refresh |
Jun. 17, 2003 |
| 6573582 |
Semiconductor device |
Jun. 3, 2003 |
| 6563181 |
High frequency signal isolation in a semiconductor device |
May. 13, 2003 |
| 6504230 |
Compensation component and method for fabricating the compensation component |
Jan. 7, 2003 |
| 6469365 |
Semiconductor component with a structure for avoiding parallel-path currents and method for fabricating a semiconductor component |
Oct. 22, 2002 |
| 6426535 |
Semiconductor device having improved short channel resistance |
Jul. 30, 2002 |
| 6420774 |
Low junction capacitance semiconductor structure and I/O buffer |
Jul. 16, 2002 |
| 6388298 |
Detached drain MOSFET |
May. 14, 2002 |
| 6288424 |
Semiconductor device having LDMOS transistors and a screening layer |
Sep. 11, 2001 |
| 6255713 |
Current source using merged vertical bipolar transistor based on gate induced gate leakage current |
Jul. 3, 2001 |
| 6255697 |
Integrated circuit devices including distributed and isolated dummy conductive regions |
Jul. 3, 2001 |
| 6249039 |
Integrated inductive components and method of fabricating such components |
Jun. 19, 2001 |
| 6160304 |
Semiconductor device comprising a half-bridge circuit |
Dec. 12, 2000 |
| 6150699 |
Tri-voltage Bi-CMOS semiconductor device |
Nov. 21, 2000 |
| 6137148 |
NMOS transistor |
Oct. 24, 2000 |
| 5994755 |
Analog-to-digital converter and method of fabrication |
Nov. 30, 1999 |
| 5929506 |
Isolated vertical PNP transistor and methods for making same in a digital BiCMOS process |
Jul. 27, 1999 |
| 5899714 |
Fabrication of semiconductor structure having two levels of buried regions |
May. 4, 1999 |
| 5852327 |
Semiconductor device |
Dec. 22, 1998 |
| 5834807 |
Nonvolatile memory device having an improved integration and reduced contact failure |
Nov. 10, 1998 |
| 5814858 |
Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer |
Sep. 29, 1998 |
| 5811854 |
One piece semiconductor device having a power fet and a low level signal element with laterally spaced buried layers |
Sep. 22, 1998 |
| 5623159 |
Integrated circuit isolation structure for suppressing high-frequency cross-talk |
Apr. 22, 1997 |
| 5565701 |
Integrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistors |
Oct. 15, 1996 |
| 5561316 |
Epitaxial silicon starting material |
Oct. 1, 1996 |
| 5557139 |
Buried base vertical bipolar power transistor with improved current gain and operation area |
Sep. 17, 1996 |
| 5485027 |
Isolated DMOS IC technology |
Jan. 16, 1996 |
| 5467307 |
Memory array utilizing low voltage Fowler-Nordheim Flash EEPROM cell |
Nov. 14, 1995 |
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