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Class Information
Number: 257/545
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With pn junction isolation > With means to control isolation junction capacitance (e.g., lightly doped layer at isolation junction to increase depletion layer width)
Description: Subject matter wherein the device is provided with means, such as a lightly doped semiconductor layer at the isolation junction, to control (e.g., increase or decrease) the capacitance of the isolation junction.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7411271 |
Complementary metal-oxide-semiconductor field effect transistor |
Aug. 12, 2008 |
| 7385275 |
Shallow trench isolation method for shielding trapped charge in a semiconductor device |
Jun. 10, 2008 |
| 7345355 |
Complementary junction-narrowing implants for ultra-shallow junctions |
Mar. 18, 2008 |
| 7335956 |
Capacitor device with vertically arranged capacitor regions of various kinds |
Feb. 26, 2008 |
| 7199407 |
Semiconductor device |
Apr. 3, 2007 |
| 7119393 |
Transistor having fully-depleted junctions to reduce capacitance and increase radiation immunity in an integrated circuit |
Oct. 10, 2006 |
| 6815771 |
Silicon on insulator device and layout method of the same |
Nov. 9, 2004 |
| 6759726 |
Formation of an isolating wall |
Jul. 6, 2004 |
| 6664607 |
Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof |
Dec. 16, 2003 |
| 6501139 |
High-voltage transistor and fabrication process |
Dec. 31, 2002 |
| 6469365 |
Semiconductor component with a structure for avoiding parallel-path currents and method for fabricating a semiconductor component |
Oct. 22, 2002 |
| 6441456 |
Semiconductor device and a process for manufacturing the same |
Aug. 27, 2002 |
| 6433407 |
Semiconductor integrated circuit |
Aug. 13, 2002 |
| 6420774 |
Low junction capacitance semiconductor structure and I/O buffer |
Jul. 16, 2002 |
| 6384455 |
MOS semiconductor device with shallow trench isolation structure and manufacturing method thereof |
May. 7, 2002 |
| 6346736 |
Trench isolated semiconductor device |
Feb. 12, 2002 |
| 6239472 |
MOSFET structure having improved source/drain junction performance |
May. 29, 2001 |
| 6002158 |
High breakdown-voltage diode with electric-field relaxation region |
Dec. 14, 1999 |
| 5932905 |
Article comprising a capacitor with non-perovskite Sr-Ba-Ti oxide dielectric thin film |
Aug. 3, 1999 |
| 5929506 |
Isolated vertical PNP transistor and methods for making same in a digital BiCMOS process |
Jul. 27, 1999 |
| 5899714 |
Fabrication of semiconductor structure having two levels of buried regions |
May. 4, 1999 |
| 5821601 |
Bipolar semiconductor integrated circuit with a protection circuit |
Oct. 13, 1998 |
| 5567978 |
High voltage, junction isolation semiconductor device having dual conductivity tape buried regions and its process of manufacture |
Oct. 22, 1996 |
| 5495124 |
Semiconductor device with increased breakdown voltage |
Feb. 27, 1996 |
| 5455447 |
Vertical PNP transistor in merged bipolar/CMOS technology |
Oct. 3, 1995 |
| 5434444 |
High breakdown voltage semiconductor device |
Jul. 18, 1995 |
| 5382820 |
High voltage CMOS device to integrate low voltage controlling device |
Jan. 17, 1995 |
| 5300805 |
Epitaxial tub bias structure for integrated circuits |
Apr. 5, 1994 |
| 5241210 |
High breakdown voltage semiconductor device |
Aug. 31, 1993 |
| 5124761 |
Semiconductor apparatus |
Jun. 23, 1992 |
| 4969030 |
Integrated structure for a signal transfer network, in particular for a pilot circuit for MOS power transistors |
Nov. 6, 1990 |
| 4935796 |
Device for minimizing parasitic junction capacitances in an insulated collector vertical P-N-P transistor |
Jun. 19, 1990 |
| 4839735 |
Solid state image sensor having variable charge accumulation time period |
Jun. 13, 1989 |
| 4794443 |
Semiconductor device and process for producing same |
Dec. 27, 1988 |
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