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Class Information
Number: 257/545
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With pn junction isolation > With means to control isolation junction capacitance (e.g., lightly doped layer at isolation junction to increase depletion layer width)
Description: Subject matter wherein the device is provided with means, such as a lightly doped semiconductor layer at the isolation junction, to control (e.g., increase or decrease) the capacitance of the isolation junction.

Patents under this class:

Patent Number Title Of Patent Date Issued
8558349 Integrated circuit for a high-side transistor driver Oct. 15, 2013
8247874 Depletion MOS transistor and charging arrangement Aug. 21, 2012
8129817 Reducing high-frequency signal loss in substrates Mar. 6, 2012
8093676 Semiconductor component including an edge termination having a trench and method for producing Jan. 10, 2012
7968970 Semiconductor device, method for manufacturing semiconductor device, and power amplifier element Jun. 28, 2011
7855407 CMOS image sensor and method for manufacturing the same Dec. 21, 2010
7821108 Systems and methods for lowering interconnect capacitance through adjustment of relative signal levels Oct. 26, 2010
7649236 Semiconductor photodetector and photodetecting device having layers with specific crystal orientations Jan. 19, 2010
7615845 Active shielding of conductors in MEMS devices Nov. 10, 2009
7485922 Isolation structure for semiconductor device including double diffusion isolation region forming PN junction with neighboring wells and isolation region beneath Feb. 3, 2009
7411271 Complementary metal-oxide-semiconductor field effect transistor Aug. 12, 2008
7385275 Shallow trench isolation method for shielding trapped charge in a semiconductor device Jun. 10, 2008
7345355 Complementary junction-narrowing implants for ultra-shallow junctions Mar. 18, 2008
7335956 Capacitor device with vertically arranged capacitor regions of various kinds Feb. 26, 2008
7199407 Semiconductor device Apr. 3, 2007
7119393 Transistor having fully-depleted junctions to reduce capacitance and increase radiation immunity in an integrated circuit Oct. 10, 2006
6815771 Silicon on insulator device and layout method of the same Nov. 9, 2004
6759726 Formation of an isolating wall Jul. 6, 2004
6664607 Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof Dec. 16, 2003
6501139 High-voltage transistor and fabrication process Dec. 31, 2002
6469365 Semiconductor component with a structure for avoiding parallel-path currents and method for fabricating a semiconductor component Oct. 22, 2002
6441456 Semiconductor device and a process for manufacturing the same Aug. 27, 2002
6433407 Semiconductor integrated circuit Aug. 13, 2002
6420774 Low junction capacitance semiconductor structure and I/O buffer Jul. 16, 2002
6384455 MOS semiconductor device with shallow trench isolation structure and manufacturing method thereof May. 7, 2002
6346736 Trench isolated semiconductor device Feb. 12, 2002
6239472 MOSFET structure having improved source/drain junction performance May. 29, 2001
6002158 High breakdown-voltage diode with electric-field relaxation region Dec. 14, 1999
5932905 Article comprising a capacitor with non-perovskite Sr-Ba-Ti oxide dielectric thin film Aug. 3, 1999
5929506 Isolated vertical PNP transistor and methods for making same in a digital BiCMOS process Jul. 27, 1999
5899714 Fabrication of semiconductor structure having two levels of buried regions May. 4, 1999
5821601 Bipolar semiconductor integrated circuit with a protection circuit Oct. 13, 1998
5567978 High voltage, junction isolation semiconductor device having dual conductivity tape buried regions and its process of manufacture Oct. 22, 1996
5495124 Semiconductor device with increased breakdown voltage Feb. 27, 1996
5455447 Vertical PNP transistor in merged bipolar/CMOS technology Oct. 3, 1995
5434444 High breakdown voltage semiconductor device Jul. 18, 1995
5382820 High voltage CMOS device to integrate low voltage controlling device Jan. 17, 1995
5300805 Epitaxial tub bias structure for integrated circuits Apr. 5, 1994
5241210 High breakdown voltage semiconductor device Aug. 31, 1993
5124761 Semiconductor apparatus Jun. 23, 1992
4969030 Integrated structure for a signal transfer network, in particular for a pilot circuit for MOS power transistors Nov. 6, 1990
4935796 Device for minimizing parasitic junction capacitances in an insulated collector vertical P-N-P transistor Jun. 19, 1990
4839735 Solid state image sensor having variable charge accumulation time period Jun. 13, 1989
4794443 Semiconductor device and process for producing same Dec. 27, 1988

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