| |
 |
|
Class Information
Number: 257/542
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Passive components in ics > Including resistive element > Combined with bipolar transistor > Resistor has same doping as emitter or collector of bipolar transistor
Description: Subject matter wherein the resistor region has the same doping concentration and profile (e.g., is formed in the same step as) either the emitter or the collector region of the bipolar transistor with which the resistor is combined in the same integrated circuit.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7319254 |
Semiconductor memory device having resistor and method of fabricating the same |
Jan. 15, 2008 |
| 7211494 |
Semiconductor structures utilizing thin film resistors and tungsten plug connectors and methods for making the same |
May. 1, 2007 |
| 7208814 |
Resistive device and method for its production |
Apr. 24, 2007 |
| 7136299 |
High-density phase change cell array and phase change memory device having the same |
Nov. 14, 2006 |
| 7135755 |
Integrated semiconductor device providing for preventing the action of parasitic transistors |
Nov. 14, 2006 |
| 7064413 |
Fin-type resistors |
Jun. 20, 2006 |
| 7026690 |
Memory devices and electronic systems comprising integrated bipolar and FET devices |
Apr. 11, 2006 |
| 6979879 |
Trim zener using double poly process |
Dec. 27, 2005 |
| 6878976 |
Carbon-modulated breakdown voltage SiGe transistor for low voltage trigger ESD applications |
Apr. 12, 2005 |
| 6849921 |
Semiconductor device |
Feb. 1, 2005 |
| 6642604 |
Semiconductor device with resistor layer having heat radiation path to semiconductor substrate |
Nov. 4, 2003 |
| 6639300 |
Semiconductor integrated circuit having an integrated resistance region |
Oct. 28, 2003 |
| 6590272 |
Structure for a semiconductor resistive element, particularly for high voltage applications |
Jul. 8, 2003 |
| 6545340 |
Semiconductor device |
Apr. 8, 2003 |
| 6107671 |
Film device provided with a resistance-adjustable resistive element |
Aug. 22, 2000 |
| 5880513 |
Asymmetric snubber resistor |
Mar. 9, 1999 |
| 5736755 |
Vertical PNP power device with different ballastic resistant vertical PNP transistors |
Apr. 7, 1998 |
| 5652460 |
Integrated resistor networks having reduced cross talk |
Jul. 29, 1997 |
| 5321279 |
Base ballasting |
Jun. 14, 1994 |
| 5304838 |
Vertical resistive element for integrated circuit miniaturization |
Apr. 19, 1994 |
| 5138417 |
High-frequency semiconductor device |
Aug. 11, 1992 |
| 4782378 |
Transistor having integrated stabilizing resistor and method of making thereof |
Nov. 1, 1988 |
| 4604640 |
Darlington transistors |
Aug. 5, 1986 |
| 4599631 |
Semiconductor apparatus having a zener diode integral with a resistor-transistor combination |
Jul. 8, 1986 |
| 4416055 |
Method of fabricating a monolithic integrated circuit structure |
Nov. 22, 1983 |
| 4413237 |
Sawtooth wave oscillator |
Nov. 1, 1983 |
| 4316319 |
Method for making a high sheet resistance structure for high density integrated circuits |
Feb. 23, 1982 |
| 4196228 |
Fabrication of high resistivity semiconductor resistors by ion implanatation |
Apr. 1, 1980 |
| 4134124 |
Semiconductor devices and circuit arrangements including such devices |
Jan. 9, 1979 |
| 4013971 |
Integrated amplifier |
Mar. 22, 1977 |
| 4011580 |
Integrated circuit |
Mar. 8, 1977 |
| 3933528 |
Process for fabricating integrated circuits utilizing ion implantation |
Jan. 20, 1976 |
|
|
|