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Class Information
Number: 257/541
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Passive components in ics > Including resistive element > Combined with bipolar transistor > Pinch resistor
Description: Subject matter wherein the resistor element has a structure in the form of a layer of one conductivity type sandwiched between a pair of regions of opposite conductivity type, so that the upper region of opposite conductivity type restricts the thickness of the resistive layer and thus increases its resistivity.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7319254 |
Semiconductor memory device having resistor and method of fabricating the same |
Jan. 15, 2008 |
| 7208814 |
Resistive device and method for its production |
Apr. 24, 2007 |
| 7136299 |
High-density phase change cell array and phase change memory device having the same |
Nov. 14, 2006 |
| 6849921 |
Semiconductor device |
Feb. 1, 2005 |
| 6753578 |
Resin-sealed semiconductor device |
Jun. 22, 2004 |
| 6703283 |
Discontinuous dielectric interface for bipolar transistors |
Mar. 9, 2004 |
| 6696916 |
Integrated vertical resistor structure with reduced dimensions, for high voltage, and manufacturing process thereof |
Feb. 24, 2004 |
| 6667538 |
Semiconductor device having semiconductor resistance element and fabrication method thereof |
Dec. 23, 2003 |
| 6612019 |
Integrated circuit inductors |
Sep. 2, 2003 |
| 6611042 |
Semiconductor device including resistors isolated and equdistant from diffusion regions |
Aug. 26, 2003 |
| 6531745 |
Electro static discharge protection n-well ballast resistor device |
Mar. 11, 2003 |
| 6479882 |
Current-limiting device |
Nov. 12, 2002 |
| 6441460 |
Largely voltage-independent electrical resistor formed in an integrated semiconductor circuit |
Aug. 27, 2002 |
| 6331726 |
SOI voltage dependent negative-saturation-resistance resistor ballasting element for ESD protection of receivers and driver circuitry |
Dec. 18, 2001 |
| 6255700 |
CMOS semiconductor device |
Jul. 3, 2001 |
| 6111304 |
Semiconductor diffused resistor and method for manufacturing the same |
Aug. 29, 2000 |
| 6107671 |
Film device provided with a resistance-adjustable resistive element |
Aug. 22, 2000 |
| 6104277 |
Polysilicon defined diffused resistor |
Aug. 15, 2000 |
| 5448092 |
Insulated gate bipolar transistor with current detection function |
Sep. 5, 1995 |
| 5432375 |
Thermistor intended primarily for temperature measurement |
Jul. 11, 1995 |
| 5210439 |
Power transistor monolithic integrated structure |
May. 11, 1993 |
| 4827322 |
Power transistor |
May. 2, 1989 |
| 4725876 |
Semiconductor device having at least two resistors with high resistance values |
Feb. 16, 1988 |
| 4686557 |
Semiconductor element and method for producing the same |
Aug. 11, 1987 |
| 4510517 |
Electronically controlled variable semiconductor resistor |
Apr. 9, 1985 |
| 4500900 |
Emitter ballast resistor configuration |
Feb. 19, 1985 |
| 4463370 |
Semiconductor device for use in memory cells |
Jul. 31, 1984 |
| 4398206 |
Transistor with integrated diode and resistor |
Aug. 9, 1983 |
| 4302691 |
Integrated delay circuit with PN-junction capacitor |
Nov. 24, 1981 |
| 4258380 |
Bipolar transistor having an integrated resistive emitter zone |
Mar. 24, 1981 |
| 4258311 |
Constant voltage generator for generating a constant voltage having a predetermined temperature coefficient |
Mar. 24, 1981 |
| 4136355 |
Darlington transistor |
Jan. 23, 1979 |
| 4100565 |
Monolithic resistor for compensating beta of a lateral transistor |
Jul. 11, 1978 |
| 4053923 |
Integrated logic elements with improved speed-power characteristics |
Oct. 11, 1977 |
| 4035827 |
Thermally ballasted semiconductor device |
Jul. 12, 1977 |
| 4035784 |
Asymmetrical memory cell arrangement |
Jul. 12, 1977 |
| 3979612 |
V-groove isolated integrated circuit memory with integral pinched resistors |
Sep. 7, 1976 |
| 3971060 |
TTL coupling transistor |
Jul. 20, 1976 |
| 3959040 |
Compound diffused regions for emitter-coupled logic circuits |
May. 25, 1976 |
| 3947298 |
Method of forming junction regions utilizing R.F. sputtering |
Mar. 30, 1976 |
| 3936813 |
Bipolar memory cell employing inverted transistors and pinched base resistors |
Feb. 3, 1976 |
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