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Class Information
Number: 257/530
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Passive components in ics > Including programmable passive component (e.g., fuse) > Anti-fuse
Description: Subject matter wherein an element which is normally non-conductive is made conductive (e.g., a capacitor) that is, that can be selectively electrically shorted.


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
7626269 Semiconductor constructions and assemblies, and electronic systems Dec. 1, 2009
7623368 Non-volatile semiconductor memory based on enhanced gate oxide breakdown Nov. 24, 2009
7619247 Structure for amorphous carbon based non-volatile memory Nov. 17, 2009
7615771 Memory array having memory cells formed from metallic material Nov. 10, 2009
7602041 Input protection circuit preventing electrostatic discharge damage of semiconductor integrated circuit Oct. 13, 2009
7602042 Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same Oct. 13, 2009
7592206 Fuse region and method of fabricating the same Sep. 22, 2009
7589363 Fuse structures, methods of making and using the same, and integrated circuits including the same Sep. 15, 2009
7579673 Semiconductor device having electrical fuse Aug. 25, 2009
7572682 Semiconductor structure for fuse and anti-fuse applications Aug. 11, 2009
7566593 Fuse structure including cavity and methods for fabrication thereof Jul. 28, 2009
7557424 Reversible electric fuse and antifuse structures for semiconductor devices Jul. 7, 2009
7550818 Method of manufacture of a PCRAM memory cell Jun. 23, 2009
7538410 Fuse structure window May. 26, 2009
7531886 MOSFET fuse programmed by electromigration May. 12, 2009
7517762 Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse area Apr. 14, 2009
7511355 Semiconductor device having fuse element Mar. 31, 2009
7498655 Probe-based memory Mar. 3, 2009
7459747 Nonvolatile semiconductor memory device and manufacturing method of the same Dec. 2, 2008
7459763 Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material Dec. 2, 2008
7459764 Method of manufacture of a PCRAM memory cell Dec. 2, 2008
7456426 Fin-type antifuse Nov. 25, 2008
7442626 Rectangular contact used as a low voltage fuse element Oct. 28, 2008
7436028 One-time programmable read only memory and operating method thereof Oct. 14, 2008
7425720 Semiconductor device Sep. 16, 2008
7414257 Switching device for configurable interconnect and method for preparing the same Aug. 19, 2008
7410838 Fabrication methods for memory cells Aug. 12, 2008
7405463 Gate dielectric antifuse circuit to protect a high-voltage transistor Jul. 29, 2008
7402888 Input protection circuit preventing electrostatic discharge damage of semiconductor integrated circuit Jul. 22, 2008
7402855 Split-channel antifuse array architecture Jul. 22, 2008
7402463 Adopting feature of buried electrically conductive layer in dielectrics for electrical anti-fuse application Jul. 22, 2008
7396699 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry Jul. 8, 2008
7388273 Reprogrammable fuse structure and method Jun. 17, 2008
7358589 Amorphous carbon metal-to-metal antifuse with adhesion promoting layers Apr. 15, 2008
7358590 Semiconductor device and driving method thereof Apr. 15, 2008
7341892 Semiconductor memory cell and method of forming same Mar. 11, 2008
7332791 Electrically programmable polysilicon fuse with multiple level resistance and programming Feb. 19, 2008
7329911 Semiconductor device including memory cell and anti-fuse element Feb. 12, 2008
7323761 Antifuse structure having an integrated heating element Jan. 29, 2008
7312513 Antifuse circuit with well bias transistor Dec. 25, 2007
7301216 Fuse structure Nov. 27, 2007
7279772 Edge intensive antifuse and method for making the same Oct. 9, 2007
7276775 Intrinsic dual gate oxide MOSFET using a damascene gate process Oct. 2, 2007
7274049 Semiconductor assemblies Sep. 25, 2007
7272067 Electrically-programmable integrated circuit antifuses Sep. 18, 2007
7269898 Method for making an edge intensive antifuse Sep. 18, 2007
7262479 Layout structure of fuse bank of semiconductor memory device Aug. 28, 2007
7256471 Antifuse element and electrically redundant antifuse array for controlled rupture location Aug. 14, 2007
7253496 Antifuse circuit with current regulator for controlling programming current Aug. 7, 2007
7253430 Controllable ovonic phase-change semiconductor memory device Aug. 7, 2007

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