 |
|
 |
| |
 |
|
Class Information
Number: 257/53
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Amorphous semiconductor material > Responsive to nonelectrical external signals (e.g., light)
Description: Subject matter wherein the amorphous semiconductor active junction generates an electrical signal when subjected to non-electrical (e.g., optical, thermal, or vibratory) signals.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4546009 |
High-mobility amorphous silicon displaying non-dispersive transport properties |
Oct. 8, 1985 |
| 4539431 |
Pulse anneal method for solar cell |
Sep. 3, 1985 |
| 4536607 |
Photovoltaic tandem cell |
Aug. 20, 1985 |
| 4536460 |
Photoconductive member |
Aug. 20, 1985 |
| 4532373 |
Amorphous photovoltaic solar cell |
Jul. 30, 1985 |
| 4531015 |
PIN Amorphous silicon solar cell with nitrogen compensation |
Jul. 23, 1985 |
| 4528082 |
Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers |
Jul. 9, 1985 |
| 4526849 |
Multilayer electrophotographic amorphous silicon element for electrophotographic copying processes |
Jul. 2, 1985 |
| 4527007 |
Process for forming passivation film on photoelectric conversion device and the device produced thereby |
Jul. 2, 1985 |
| 4523962 |
Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor |
Jun. 18, 1985 |
| 4523214 |
Solid state image pickup device utilizing microcrystalline and amorphous silicon |
Jun. 11, 1985 |
| 4518815 |
Photoelectric conversion device |
May. 21, 1985 |
| 4514582 |
Optical absorption enhancement in amorphous silicon deposited on rough substrate |
Apr. 30, 1985 |
| 4511756 |
Amorphous silicon solar cells and a method of producing the same |
Apr. 16, 1985 |
| 4509990 |
Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates |
Apr. 9, 1985 |
| 4507519 |
Photoelectronic conversion device |
Mar. 26, 1985 |
| 4500743 |
Amorphous semiconductor solar cell having a grained transparent electrode |
Feb. 19, 1985 |
| 4499331 |
Amorphous semiconductor and amorphous silicon photovoltaic device |
Feb. 12, 1985 |
| 4498092 |
Semiconductor photoelectric conversion device |
Feb. 5, 1985 |
| 4496834 |
Focus detecting photoelectric device and focus detecting system |
Jan. 29, 1985 |
| 4492813 |
Amorphous silicon solar cell |
Jan. 8, 1985 |
| 4491682 |
Amorphous silicon photovoltaic device including a two-layer transparent electrode |
Jan. 1, 1985 |
| 4490573 |
Solar cells |
Dec. 25, 1984 |
| 4489149 |
Electrophotographic amorphous silicon member |
Dec. 18, 1984 |
| 4484809 |
Glow discharge method and apparatus and photoreceptor devices made therewith |
Nov. 27, 1984 |
| 4482804 |
Photosensor array wherein each photosensor comprises a plurality of amorphous silicon p-i-n diodes |
Nov. 13, 1984 |
| 4482780 |
Solar cells with low cost substrates and process of making same |
Nov. 13, 1984 |
| 4476346 |
Photovoltaic device |
Oct. 9, 1984 |
| 4471042 |
Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium |
Sep. 11, 1984 |
| 4471371 |
Thin film image pickup element |
Sep. 11, 1984 |
| 4471155 |
Narrow band gap photovoltaic devices with enhanced open circuit voltage |
Sep. 11, 1984 |
| 4465750 |
Photoconductive member with a -Si having two layer regions |
Aug. 14, 1984 |
| 4464823 |
Method for eliminating short and latent short circuit current paths in photovoltaic devices |
Aug. 14, 1984 |
| 4461956 |
Solid-state photoelectric converter |
Jul. 24, 1984 |
| 4461819 |
Image-forming member for electrophotography |
Jul. 24, 1984 |
| 4460669 |
Photoconductive member with .alpha.-Si and C, U or D and dopant |
Jul. 17, 1984 |
| 4460670 |
Photoconductive member with .alpha.-Si and C, N or O and dopant |
Jul. 17, 1984 |
| 4459163 |
Amorphous semiconductor method |
Jul. 10, 1984 |
| 4453173 |
Photocell utilizing a wide-bandgap semiconductor material |
Jun. 5, 1984 |
| 4451538 |
High hydrogen amorphous silicon |
May. 29, 1984 |
| 4450316 |
Amorphous silicon photovoltaic device having two-layer transparent electrode |
May. 22, 1984 |
| 4443651 |
Series connected solar cells on a single substrate |
Apr. 17, 1984 |
| 4443653 |
Thin film photovoltaic device with multilayer substrate |
Apr. 17, 1984 |
| 4434318 |
Solar cells and method |
Feb. 28, 1984 |
| 4431858 |
Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby |
Feb. 14, 1984 |
| 4428110 |
Method of making an array of series connected solar cells on a single substrate |
Jan. 31, 1984 |
| 4429325 |
Photosensor |
Jan. 31, 1984 |
| 4422063 |
Semiconductor strain gauge |
Dec. 20, 1983 |
| 4420546 |
Member for electrophotography with a-Si and c-Si layers |
Dec. 13, 1983 |
| 4419604 |
Light sensitive screen |
Dec. 6, 1983 |
|
|
|
 |
|
 |
|
| |
Randomly Featured Patents |
|
