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Class Information
Number: 257/53
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Amorphous semiconductor material > Responsive to nonelectrical external signals (e.g., light)
Description: Subject matter wherein the amorphous semiconductor active junction generates an electrical signal when subjected to non-electrical (e.g., optical, thermal, or vibratory) signals.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4697331 |
Method of fabrication of a control transistor for a flat-panel display screen |
Oct. 6, 1987 |
| 4698658 |
Amorphous semiconductor device |
Oct. 6, 1987 |
| 4698495 |
Amorphous silicon photo-sensor for a contact type image sensor |
Oct. 6, 1987 |
| 4694317 |
Solid state imaging device and process for fabricating the same |
Sep. 15, 1987 |
| 4692782 |
Semiconductor radioactive ray detector |
Sep. 8, 1987 |
| 4691242 |
Contact type image sensor having multiple common electrodes to provide increased pixel density |
Sep. 1, 1987 |
| 4683186 |
Doped amorphous silicon photoconductive device having a protective coating |
Jul. 28, 1987 |
| 4682019 |
Amorphous silicon photoelectric transducer with a photoconductive colorant layer |
Jul. 21, 1987 |
| 4679085 |
Digital integrated electronic storage system for video and audio playback |
Jul. 7, 1987 |
| 4677250 |
Fault tolerant thin-film photovoltaic cell |
Jun. 30, 1987 |
| 4675469 |
Amorphous silicon solar battery |
Jun. 23, 1987 |
| 4673628 |
Image forming member for electrophotography |
Jun. 16, 1987 |
| 4670762 |
Amorphous silicon semiconductor and process for same |
Jun. 2, 1987 |
| 4668599 |
Photoreceptor comprising amorphous layer doped with atoms and/or ions of a metal |
May. 26, 1987 |
| 4667214 |
Photosensor |
May. 19, 1987 |
| 4658280 |
Amorphous silicon photosensor of layers having differing conductivity |
Apr. 14, 1987 |
| 4656110 |
Electrophotographic photosensitive member having a photoconductive layer of an amorphous material |
Apr. 7, 1987 |
| 4644406 |
Large scale contact type image reading unit using two-dimensional sensor array |
Feb. 17, 1987 |
| 4642414 |
Solar cell |
Feb. 10, 1987 |
| 4641168 |
Light sensitive semiconductor device for holding electrical charge therein |
Feb. 3, 1987 |
| 4638111 |
Thin film solar cell module |
Jan. 20, 1987 |
| 4633287 |
Semiconductor photoelectric conversion device |
Dec. 30, 1986 |
| 4626878 |
Semiconductor optical logical device |
Dec. 2, 1986 |
| 4626885 |
Photosensor having impurity concentration gradient |
Dec. 2, 1986 |
| 4624045 |
Method of making thin film device |
Nov. 25, 1986 |
| 4624905 |
Electrophotographic photosensitive member |
Nov. 25, 1986 |
| 4613880 |
Light sensitive apparatus |
Sep. 23, 1986 |
| 4609771 |
Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material |
Sep. 2, 1986 |
| 4604636 |
Microcrystalline semiconductor method and devices |
Aug. 5, 1986 |
| 4600670 |
Printing member for electrostatic photocopying |
Jul. 15, 1986 |
| 4598164 |
Solar cell made from amorphous superlattice material |
Jul. 1, 1986 |
| 4598031 |
Printing member for electrostatic photocopying |
Jul. 1, 1986 |
| 4592979 |
Photoconductive member of amorphous germanium and silicon with nitrogen |
Jun. 3, 1986 |
| 4587187 |
Printing member for electrostatic photocopying |
May. 6, 1986 |
| 4585720 |
Photoconductive member having light receiving layer of a-(Si-Ge) and C |
Apr. 29, 1986 |
| 4584427 |
Thin film solar cell with free tin on tin oxide transparent conductor |
Apr. 22, 1986 |
| 4582769 |
Electrophotographic element with amorphous Si(C) overlayer |
Apr. 15, 1986 |
| 4582770 |
Printing member for electrostatic photocopying |
Apr. 15, 1986 |
| 4581620 |
Semiconductor device of non-single crystal structure |
Apr. 8, 1986 |
| 4581476 |
Photoelectric conversion device |
Apr. 8, 1986 |
| 4579798 |
Amorphous silicon and germanium photoconductive member containing carbon |
Apr. 1, 1986 |
| 4572882 |
Photoconductive member containing amorphous silicon and germanium |
Feb. 25, 1986 |
| 4572881 |
Printing member for electrostatic photocopying |
Feb. 25, 1986 |
| 4567374 |
Photoelectric converting device with a plurality of divided electrodes |
Jan. 28, 1986 |
| 4559552 |
PIN semiconductor photoelectric conversion device with two oxide layers |
Dec. 17, 1985 |
| 4557987 |
Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers |
Dec. 10, 1985 |
| 4555462 |
Printing member for electrostatic photocopying |
Nov. 26, 1985 |
| 4555464 |
Amorphous silicon electrophotographic photosensitive materials |
Nov. 26, 1985 |
| 4552824 |
Electrophotographic photosensitive member and process for production thereof |
Nov. 12, 1985 |
| 4545111 |
Method for making, parallel preprogramming or field programming of electronic matrix arrays |
Oct. 8, 1985 |
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