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Class Information
Number: 257/53
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Amorphous semiconductor material > Responsive to nonelectrical external signals (e.g., light)
Description: Subject matter wherein the amorphous semiconductor active junction generates an electrical signal when subjected to non-electrical (e.g., optical, thermal, or vibratory) signals.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5344499 |
Electric device of hydrogenated amorphous silicon and method of manufacture |
Sep. 6, 1994 |
| 5342452 |
Photovoltaic device |
Aug. 30, 1994 |
| 5336906 |
Image sensor and method of manufacture |
Aug. 9, 1994 |
| RE34658 |
Semiconductor device of non-single crystal-structure |
Jul. 12, 1994 |
| 5329135 |
Light emitting device for achieving high luminous efficiency and high saturation level of light output |
Jul. 12, 1994 |
| 5311047 |
Amorphous SI/SIC heterojunction color-sensitive phototransistor |
May. 10, 1994 |
| 5308969 |
Image sensor |
May. 3, 1994 |
| 5308996 |
TFT device |
May. 3, 1994 |
| 5301048 |
Active matrix display device with Schottky contact switching elements |
Apr. 5, 1994 |
| 5291036 |
Amorphous silicon sensor |
Mar. 1, 1994 |
| 5288649 |
Method for forming uncooled infrared detector |
Feb. 22, 1994 |
| 5270536 |
Method of using DC photocurrent measurements to sense wavelength or color of light or to characterize semiconductor materials |
Dec. 14, 1993 |
| 5264710 |
Amorphous semiconductor, amorphous semiconductor device using hydrogen radicals |
Nov. 23, 1993 |
| 5262654 |
Device for reading an image having a common semiconductor layer |
Nov. 16, 1993 |
| 5256887 |
Photovoltaic device including a boron doping profile in an i-type layer |
Oct. 26, 1993 |
| 5245201 |
Photoelectric converting device and image processing apparatus utilizing the same |
Sep. 14, 1993 |
| 5243216 |
Phototransistor |
Sep. 7, 1993 |
| 5229622 |
Integrated semiconductor optoelectronic switch |
Jul. 20, 1993 |
| 5225706 |
Matrix of photosensitive elements associating a photodiode or a phototransistor and a storage capacitor |
Jul. 6, 1993 |
| 5216491 |
Semiconductor photoconductive device with laminated refractory metal electrode |
Jun. 1, 1993 |
| 5210766 |
Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors |
May. 11, 1993 |
| 5206523 |
Microporous crystalline silicon of increased band-gap for semiconductor applications |
Apr. 27, 1993 |
| 5196911 |
High photosensitive depletion-gate thin film transistor |
Mar. 23, 1993 |
| 5192991 |
Crystallized polycrystalline semiconductor device |
Mar. 9, 1993 |
| 5191202 |
Photoelectric conversion device |
Mar. 2, 1993 |
| 5191394 |
Amorphous silicon photodiode with sloped sidewalls and method of fabrication |
Mar. 2, 1993 |
| 5187563 |
Photoelectric conversion device with Al/Cr/TCO electrode |
Feb. 16, 1993 |
| 5184200 |
Thin film semiconductor device with particular grain size |
Feb. 2, 1993 |
| 5166757 |
Dry-etched amorphous silicon device with recessed electrode |
Nov. 24, 1992 |
| 5140395 |
X-ray sensor arrays |
Aug. 18, 1992 |
| 5140001 |
Integrated microelectronic assembly comprising photoconductor with superconducting leads |
Aug. 18, 1992 |
| 5140397 |
Amorphous silicon photoelectric device |
Aug. 18, 1992 |
| 5140398 |
Switching device |
Aug. 18, 1992 |
| 5130775 |
Amorphous photo-detecting element with spatial filter |
Jul. 14, 1992 |
| 5128729 |
Complex opto-isolator with improved stand-off voltage stability |
Jul. 7, 1992 |
| 5112409 |
Solar cells with reduced recombination under grid lines, and method of manufacturing same |
May. 12, 1992 |
| 5101260 |
Multilayer light scattering photovoltaic back reflector and method of making same |
Mar. 31, 1992 |
| 5101255 |
Amorphous photoelectric conversion device with avalanche |
Mar. 31, 1992 |
| 5093564 |
Photosensor having an amorphous silicon photoabsorption layer |
Mar. 3, 1992 |
| 5091638 |
Contact image sensor having light-receiving windows |
Feb. 25, 1992 |
| 5083175 |
Method of using offset gated gap-cell thin film device as a photosensor |
Jan. 21, 1992 |
| 5075749 |
Optical device including a grating |
Dec. 24, 1991 |
| 5075237 |
Process of making a high photosensitive depletion-gate thin film transistor |
Dec. 24, 1991 |
| 5066340 |
Photovoltaic device |
Nov. 19, 1991 |
| 5060041 |
Amorphous silicon photosensor |
Oct. 22, 1991 |
| 5060040 |
Photoelectric conversion apparatus |
Oct. 22, 1991 |
| 5053835 |
InP semiconductor thin film on Si |
Oct. 1, 1991 |
| 5051803 |
Diode and producing method thereof and contact image sensor device comprising the same |
Sep. 24, 1991 |
| 5047090 |
Semiconductor device |
Sep. 10, 1991 |
| 5045907 |
Graphotaxially formed photosensitive detector array |
Sep. 3, 1991 |
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