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Class Information
Number: 257/53
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Amorphous semiconductor material > Responsive to nonelectrical external signals (e.g., light)
Description: Subject matter wherein the amorphous semiconductor active junction generates an electrical signal when subjected to non-electrical (e.g., optical, thermal, or vibratory) signals.










Sub-classes under this class:

Class Number Class Name Patents
257/55 Amorphous semiconductor is alloy or contains material to change band gap (e.g., si x ge 1-x , sin y ) 260
257/56 With impurity other than hydrogen to passivate dangling bonds (e.g., halide) 137
257/54 With schottky barrier to amorphous material 92


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12

Patent Number Title Of Patent Date Issued
4698658 Amorphous semiconductor device Oct. 6, 1987
4694317 Solid state imaging device and process for fabricating the same Sep. 15, 1987
4692782 Semiconductor radioactive ray detector Sep. 8, 1987
4691242 Contact type image sensor having multiple common electrodes to provide increased pixel density Sep. 1, 1987
4683186 Doped amorphous silicon photoconductive device having a protective coating Jul. 28, 1987
4682019 Amorphous silicon photoelectric transducer with a photoconductive colorant layer Jul. 21, 1987
4679085 Digital integrated electronic storage system for video and audio playback Jul. 7, 1987
4677250 Fault tolerant thin-film photovoltaic cell Jun. 30, 1987
4675469 Amorphous silicon solar battery Jun. 23, 1987
4673628 Image forming member for electrophotography Jun. 16, 1987
4670762 Amorphous silicon semiconductor and process for same Jun. 2, 1987
4668599 Photoreceptor comprising amorphous layer doped with atoms and/or ions of a metal May. 26, 1987
4667214 Photosensor May. 19, 1987
4658280 Amorphous silicon photosensor of layers having differing conductivity Apr. 14, 1987
4656110 Electrophotographic photosensitive member having a photoconductive layer of an amorphous material Apr. 7, 1987
4644406 Large scale contact type image reading unit using two-dimensional sensor array Feb. 17, 1987
4642414 Solar cell Feb. 10, 1987
4641168 Light sensitive semiconductor device for holding electrical charge therein Feb. 3, 1987
4638111 Thin film solar cell module Jan. 20, 1987
4633287 Semiconductor photoelectric conversion device Dec. 30, 1986
4626885 Photosensor having impurity concentration gradient Dec. 2, 1986
4626878 Semiconductor optical logical device Dec. 2, 1986
4624045 Method of making thin film device Nov. 25, 1986
4624905 Electrophotographic photosensitive member Nov. 25, 1986
4613880 Light sensitive apparatus Sep. 23, 1986
4609771 Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material Sep. 2, 1986
4604636 Microcrystalline semiconductor method and devices Aug. 5, 1986
4600670 Printing member for electrostatic photocopying Jul. 15, 1986
4598164 Solar cell made from amorphous superlattice material Jul. 1, 1986
4598031 Printing member for electrostatic photocopying Jul. 1, 1986
4592979 Photoconductive member of amorphous germanium and silicon with nitrogen Jun. 3, 1986
4587187 Printing member for electrostatic photocopying May. 6, 1986
4585720 Photoconductive member having light receiving layer of a-(Si-Ge) and C Apr. 29, 1986
4584427 Thin film solar cell with free tin on tin oxide transparent conductor Apr. 22, 1986
4582769 Electrophotographic element with amorphous Si(C) overlayer Apr. 15, 1986
4582770 Printing member for electrostatic photocopying Apr. 15, 1986
4581476 Photoelectric conversion device Apr. 8, 1986
4581620 Semiconductor device of non-single crystal structure Apr. 8, 1986
4579798 Amorphous silicon and germanium photoconductive member containing carbon Apr. 1, 1986
4572881 Printing member for electrostatic photocopying Feb. 25, 1986
4572882 Photoconductive member containing amorphous silicon and germanium Feb. 25, 1986
4567374 Photoelectric converting device with a plurality of divided electrodes Jan. 28, 1986
4559552 PIN semiconductor photoelectric conversion device with two oxide layers Dec. 17, 1985
4557987 Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers Dec. 10, 1985
4555462 Printing member for electrostatic photocopying Nov. 26, 1985
4555464 Amorphous silicon electrophotographic photosensitive materials Nov. 26, 1985
4552824 Electrophotographic photosensitive member and process for production thereof Nov. 12, 1985
4545111 Method for making, parallel preprogramming or field programming of electronic matrix arrays Oct. 8, 1985
4546009 High-mobility amorphous silicon displaying non-dispersive transport properties Oct. 8, 1985
4539431 Pulse anneal method for solar cell Sep. 3, 1985

1 2 3 4 5 6 7 8 9 10 11 12










 
 
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