| |
 |
|
Class Information
Number: 257/53
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Amorphous semiconductor material > Responsive to nonelectrical external signals (e.g., light)
Description: Subject matter wherein the amorphous semiconductor active junction generates an electrical signal when subjected to non-electrical (e.g., optical, thermal, or vibratory) signals.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4417092 |
Sputtered pin amorphous silicon semi-conductor device and method therefor |
Nov. 22, 1983 |
| 4415760 |
Amorphous silicon solar cells incorporating an insulating layer in the body of amorphous silicon and a method of suppressing the back diffusion of holes into an N-type region |
Nov. 15, 1983 |
| 4412091 |
Polycrystalline photovoltaic cell |
Oct. 25, 1983 |
| 4410870 |
Semiconductor strain gauge |
Oct. 18, 1983 |
| 4405915 |
Photoelectric transducing element |
Sep. 20, 1983 |
| 4401840 |
Semicrystalline solar cell |
Aug. 30, 1983 |
| 4398054 |
Compensated amorphous silicon solar cell incorporating an insulating layer |
Aug. 9, 1983 |
| 4398055 |
Radiant energy converter having sputtered CdSiAs.sub.2 absorber |
Aug. 9, 1983 |
| 4392011 |
Solar cell structure incorporating a novel single crystal silicon material |
Jul. 5, 1983 |
| 4389534 |
Amorphous silicon solar cell having improved antireflection coating |
Jun. 21, 1983 |
| 4387265 |
Tandem junction amorphous semiconductor photovoltaic cell |
Jun. 7, 1983 |
| 4385199 |
Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon |
May. 24, 1983 |
| 4378460 |
Metal electrode for amorphous silicon solar cells |
Mar. 29, 1983 |
| 4366338 |
Compensating semiconductor materials |
Dec. 28, 1982 |
| 4360821 |
Solid-state imaging device |
Nov. 23, 1982 |
| 4330182 |
Method of forming semiconducting materials and barriers |
May. 18, 1982 |
| 4326126 |
High speed photodetector |
Apr. 20, 1982 |
| 4320168 |
Method of forming semicrystalline silicon article and product produced thereby |
Mar. 16, 1982 |
| 4292461 |
Amorphous-crystalline tandem solar cell |
Sep. 29, 1981 |
| 4281208 |
Photovoltaic device and method of manufacturing thereof |
Jul. 28, 1981 |
| 4272641 |
Tandem junction amorphous silicon solar cells |
Jun. 9, 1981 |
| 4271328 |
Photovoltaic device |
Jun. 2, 1981 |
| 4253882 |
Multiple gap photovoltaic device |
Mar. 3, 1981 |
| 4254429 |
Hetero junction semiconductor device |
Mar. 3, 1981 |
| 4202928 |
Updateable optical storage medium |
May. 13, 1980 |
| 4199777 |
Semiconductor device and a method of manufacturing the same |
Apr. 22, 1980 |
| 4171997 |
Method of producing polycrystalline silicon components, particularly solar elements |
Oct. 23, 1979 |
| 4162505 |
Inverted amorphous silicon solar cell utilizing cermet layers |
Jul. 24, 1979 |
| 4117506 |
Amorphous silicon photovoltaic device having an insulating layer |
Sep. 26, 1978 |
| 4109271 |
Amorphous silicon-amorphous silicon carbide photovoltaic device |
Aug. 22, 1978 |
| 4070206 |
Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency |
Jan. 24, 1978 |
| 4024558 |
Photovoltaic heterojunction device employing a glassy amorphous material as an active layer |
May. 17, 1977 |
| 3958262 |
Electrostatic image reproducing element employing an insulating ion impermeable glass |
May. 18, 1976 |
|
|
|
