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Class Information
Number: 257/526
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > With bipolar transistor structure
Description: Subject matter wherein the device includes at least one bipolar transistor structure.


Sub-classes under this class:

Class Number Class Name Patents
257/527 Sides of isolated semiconductor islands along major crystal planes (e.g., (111), (100) planes, etc.) 30


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7439607 Beta control using a rapid thermal oxidation Oct. 21, 2008
7420228 Bipolar transistor comprising carbon-doped semiconductor Sep. 2, 2008
7397070 Self-aligned transistor Jul. 8, 2008
7375410 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof May. 20, 2008
7355263 Semiconductor device and manufacturing method thereof Apr. 8, 2008
7342293 Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same Mar. 11, 2008
7339254 SOI substrate for integration of opto-electronics with SiGe BiCMOS Mar. 4, 2008
7332752 Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal Feb. 19, 2008
7300850 Method of forming a self-aligned transistor Nov. 27, 2007
7262478 Semiconductor device and manufacturing method thereof Aug. 28, 2007
7173320 High performance lateral bipolar transistor Feb. 6, 2007
7157785 Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices Jan. 2, 2007
7115965 Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation Oct. 3, 2006
7095094 Multiple doping level bipolar junctions transistors and method for forming Aug. 22, 2006
7071516 Semiconductor device and driving circuit for semiconductor device Jul. 4, 2006
7067899 Semiconductor integrated circuit device Jun. 27, 2006
7026690 Memory devices and electronic systems comprising integrated bipolar and FET devices Apr. 11, 2006
6984593 Beta control using a rapid thermal oxidation Jan. 10, 2006
6972442 Efficiently fabricated bipolar transistor Dec. 6, 2005
6972466 Bipolar transistors with low base resistance for CMOS integrated circuits Dec. 6, 2005
6967406 Semiconductor integrated circuit Nov. 22, 2005
6953981 Semiconductor device with deep substrates contacts Oct. 11, 2005
6914308 Vertical PNP bipolar transistor Jul. 5, 2005
6911681 Method of base formation in a BiCMOS process Jun. 28, 2005
6911715 Bipolar transistors and methods of manufacturing the same Jun. 28, 2005
6864538 Protection device against electrostatic discharges Mar. 8, 2005
6847094 Contact structure on a deep region formed in a semiconductor substrate Jan. 25, 2005
6838709 Bipolar transistor Jan. 4, 2005
6838745 Semiconductor device having a separation structure for high withstand voltage Jan. 4, 2005
6806550 Evaluation configuration for semiconductor memories Oct. 19, 2004
6777781 Base-to-substrate leakage cancellation Aug. 17, 2004
6774455 Semiconductor device with a collector contact in a depressed well-region Aug. 10, 2004
6770952 Integrated process for high voltage and high performance silicon-on-insulator bipolar devices Aug. 3, 2004
6768183 Semiconductor device having bipolar transistors Jul. 27, 2004
6750528 Bipolar device Jun. 15, 2004
6737722 Lateral transistor having graded base region, semiconductor integrated circuit and fabrication method thereof May. 18, 2004
6730981 Bipolar transistor with inclined epitaxial layer May. 4, 2004
6724066 High breakdown voltage transistor and method Apr. 20, 2004
6703283 Discontinuous dielectric interface for bipolar transistors Mar. 9, 2004
6674148 Lateral components in power semiconductor devices Jan. 6, 2004
6646320 Method of forming contact to poly-filled trench isolation region Nov. 11, 2003
6639294 Semiconductor device having a device formation region protected from a counterelectromotive force Oct. 28, 2003
6617646 Reduced substrate capacitance high performance SOI process Sep. 9, 2003
6576974 Bipolar junction transistors for on-chip electrostatic discharge protection and methods thereof Jun. 10, 2003
6573539 Heterojunction bipolar transistor with silicon-germanium base Jun. 3, 2003
6559505 Power integrated circuit with vertical current flow and related manufacturing process May. 6, 2003
6552407 Communication module having a structure for reducing crosstalk Apr. 22, 2003
6525401 Semiconductor device for integrated injection logic cell and process for fabricating the same Feb. 25, 2003
6426667 Bidirectional analog switch using two bipolar junction transistors which are both reverse connected or operating in the reverse or inverse mode Jul. 30, 2002
6420771 Trench isolated bipolar transistor structure integrated with CMOS technology Jul. 16, 2002

1 2 3


 
 
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