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Class Information
Number: 257/525
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > Full dielectric isolation with polycrystalline semiconductor substrate > With complementary (npn and pnp) bipolar transistor structures
Description: Subject matter wherein the device includes complementary bipolar transistors (i.e., includes both pnp and npn bipolar transistors).

Patents under this class:
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Patent Number Title Of Patent Date Issued
8710571 Polarity switching member of dot inversion system Apr. 29, 2014
8692266 Circuit substrate structure Apr. 8, 2014
8350355 Electrostatic discharge devices Jan. 8, 2013
8330219 Semiconductor device with high-voltage breakdown protection Dec. 11, 2012
8304858 Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof Nov. 6, 2012
8278736 Electrostatic discharge protection device Oct. 2, 2012
8115256 Semiconductor device Feb. 14, 2012
8049307 Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices Nov. 1, 2011
8026569 Semiconductor device Sep. 27, 2011
7944022 Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof May. 17, 2011
7855421 Embedded phase-change memory and method of fabricating the same Dec. 21, 2010
7719086 Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof May. 18, 2010
7569903 Component arrangement having a transistor and an open-load detector Aug. 4, 2009
7521310 Vertical thyristor in complementary SiGe bipolar process Apr. 21, 2009
7411135 Contour structures to highlight inspection regions Aug. 12, 2008
7342293 Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same Mar. 11, 2008
7173320 High performance lateral bipolar transistor Feb. 6, 2007
7067899 Semiconductor integrated circuit device Jun. 27, 2006
6967406 Semiconductor integrated circuit Nov. 22, 2005
6909164 High performance vertical PNP transistor and method Jun. 21, 2005
6869854 Diffused extrinsic base and method for fabrication Mar. 22, 2005
6856000 Reduce 1/f noise in NPN transistors without degrading the properties of PNP transistors in integrated circuit technologies Feb. 15, 2005
6853017 Bipolar transistor structure with ultra small polysilicon emitter Feb. 8, 2005
6853048 Bipolar transistor having an isolation structure located under the base, emitter and collector and a method of manufacture thereof Feb. 8, 2005
6768183 Semiconductor device having bipolar transistors Jul. 27, 2004
6750528 Bipolar device Jun. 15, 2004
6737722 Lateral transistor having graded base region, semiconductor integrated circuit and fabrication method thereof May. 18, 2004
6600199 Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunity Jul. 29, 2003
6593628 Semiconductor device and method of manufacturing same Jul. 15, 2003
6545337 Semiconductor integrated circuit device Apr. 8, 2003
6433402 Selective copper alloy deposition Aug. 13, 2002
6426667 Bidirectional analog switch using two bipolar junction transistors which are both reverse connected or operating in the reverse or inverse mode Jul. 30, 2002
6376880 High-speed lateral bipolar device in SOI process Apr. 23, 2002
6262456 Integrated circuit having transistors with different threshold voltages Jul. 17, 2001
6124622 MIS transistor with a three-layer device isolation film surrounding the MIS transistor Sep. 26, 2000
6049131 Device formed by selective deposition of refractory metal of less than 300 Angstroms of thickness Apr. 11, 2000
5915186 Method of manufacturing heterojunction bipolar device having Si.sub.1-x Ge.sub.x base Jun. 22, 1999
5892264 High frequency analog transistors, method of fabrication and circuit implementation Apr. 6, 1999
5847440 Bipolar transistor, semiconductor device having bipolar transistors Dec. 8, 1998
5729043 Shallow trench isolation with self aligned PSG layer Mar. 17, 1998
5714793 Complementary vertical bipolar junction transistors formed in silicon-on-saphire Feb. 3, 1998
5670394 Method of making bipolar transistor having amorphous silicon contact as emitter diffusion source Sep. 23, 1997
5641691 Method for fabricating complementary vertical bipolar junction transistors in silicon-on-sapphire Jun. 24, 1997
5552626 Semiconductor device having bipolar transistors with commonly interconnected collector regions Sep. 3, 1996
5508553 Transversal bipolar transistor integrated with another transistor commonly provided on a semiconductor substrate Apr. 16, 1996
5432376 Semiconductor devices containing power and control transistors Jul. 11, 1995
5376822 Heterojunction type of compound semiconductor integrated circuit Dec. 27, 1994
RE34025 Semiconductor device with isolation between MOSFET and control circuit Aug. 11, 1992
5095355 Bipolar cross-coupled memory cells having improved immunity to soft errors Mar. 10, 1992
5072287 Semiconductor device and method of manufacturing the same Dec. 10, 1991

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