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Class Information
Number: 257/524
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > Full dielectric isolation with polycrystalline semiconductor substrate
Description: Subject matter wherein the integrated circuit substrate is made of polycrystalline semiconductor material and the isolation means is a dielectric material which surrounds each active solid-state semiconductor device, resulting is those devices becoming islands in a sea of dielectric material.

Sub-classes under this class:

Class Number Class Name Patents
257/525 With complementary (npn and pnp) bipolar transistor structures 73

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8692266 Circuit substrate structure Apr. 8, 2014
8692299 Two-step shallow trench isolation (STI) process Apr. 8, 2014
8674471 Semiconductor device supplying charging current to element to be charged Mar. 18, 2014
8623772 Method of forming patterns of semiconductor device Jan. 7, 2014
8614490 Semiconductor device Dec. 24, 2013
8598675 Isolation structure profile for gap filling Dec. 3, 2013
8564100 Semiconductor device Oct. 22, 2013
8492838 Isolation structures for SOI devices with ultrathin SOI and ultrathin box Jul. 23, 2013
8395231 Semiconductor device supplying charging current to element to be charged Mar. 12, 2013
8390028 Semiconductor device with epitaxial crystal layer embedded within susbstrate of dummy pattern region Mar. 5, 2013
8334451 Discrete and integrated photo voltaic solar cells Dec. 18, 2012
8294238 Nonvolatile semiconductor memory device with reduced size of peripheral circuit area Oct. 23, 2012
8129816 Semiconductor device and method of manufacturing the same Mar. 6, 2012
8120111 Thin film transistor including insulating film and island-shaped semiconductor film Feb. 21, 2012
7989850 Array substrate and method of fabricating the same Aug. 2, 2011
7977232 Semiconductor wafer including cracking stopper structure and method of forming the same Jul. 12, 2011
7919829 Liner for shallow trench isolation Apr. 5, 2011
7777294 Semiconductor device including a high-breakdown voltage MOS transistor Aug. 17, 2010
7737526 Isolated trench MOSFET in epi-less semiconductor sustrate Jun. 15, 2010
7723772 Semiconductor memory device and method of manufacturing the same May. 25, 2010
7714318 Electronic device including a transistor structure having an active region adjacent to a stressor layer May. 11, 2010
7705385 Selective deposition of germanium spacers on nitride Apr. 27, 2010
7705656 Leakage current detection circuit and leakage current comparison circuit Apr. 27, 2010
7622778 Semiconductor device having shallow trench isolation structure comprising an upper trench and a lower trench including a void Nov. 24, 2009
7582935 Methods for manufacturing SOI substrate using wafer bonding and complementary high voltage bipolar transistor using the SOI substrate Sep. 1, 2009
7525186 Stack package having guard ring which insulates through-via interconnection plug and method for manufacturing the same Apr. 28, 2009
7462916 Semiconductor devices having torsional stresses Dec. 9, 2008
7449763 Method of fabricating cell of nonvolatile memory device with floating gate Nov. 11, 2008
7435661 Polish stop and sealing layer for manufacture of semiconductor devices with deep trench isolation Oct. 14, 2008
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device Sep. 2, 2008
7382015 Semiconductor device including an element isolation portion having a recess Jun. 3, 2008
7355262 Diffusion topography engineering for high performance CMOS fabrication Apr. 8, 2008
7291894 Vertical charge control semiconductor device with low output capacitance Nov. 6, 2007
7279769 Semiconductor device and manufacturing method thereof Oct. 9, 2007
7271464 Liner for shallow trench isolation Sep. 18, 2007
7262486 SOI substrate and method for manufacturing the same Aug. 28, 2007
7247569 Ultra-thin Si MOSFET device structure and method of manufacture Jul. 24, 2007
7224038 Semiconductor device having element isolation trench and method of fabricating the same May. 29, 2007
7192887 Semiconductor device with nitrogen in oxide film on semiconductor substrate and method of manufacturing the same Mar. 20, 2007
7183615 Nonvolatile semiconductor memory and manufacturing method for the same Feb. 27, 2007
7170109 Heterojunction semiconductor device with element isolation structure Jan. 30, 2007
7170146 TFT structure and method for manufacturing the same Jan. 30, 2007
7138319 Deep trench isolation of embedded DRAM for improved latch-up immunity Nov. 21, 2006
7122876 Isolation-region configuration for integrated-circuit transistor Oct. 17, 2006
7112866 Method to form a cross network of air gaps within IMD layer Sep. 26, 2006
7112850 Non-volatile memory device with a polarizable layer Sep. 26, 2006
7019379 Semiconductor device comprising voltage regulator element Mar. 28, 2006
7002210 Semiconductor device including a high-breakdown voltage MOS transistor Feb. 21, 2006
6964907 Method of etching a lateral trench under an extrinsic base and improved bipolar transistor Nov. 15, 2005
6949007 System and method for multi-stage process control in film removal Sep. 27, 2005

1 2 3 4

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