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Class Information
Number: 257/523
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment)
Description: Subject matter wherein the electrical insulator material which provides the dielectric isolation includes a region of intrinsic (undoped) semiconductor material, with resulting high resistivity.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7382015 |
Semiconductor device including an element isolation portion having a recess |
Jun. 3, 2008 |
| 7340121 |
Optoelectric composite substrate and method of manufacturing the same |
Mar. 4, 2008 |
| 7279770 |
Isolation techniques for reducing dark current in CMOS image sensors |
Oct. 9, 2007 |
| 7205632 |
Anti-scattering attenuator structure for high energy particle radiation into integrated circuits |
Apr. 17, 2007 |
| 7199441 |
Optical module device driven by a single power supply |
Apr. 3, 2007 |
| 7196395 |
Semiconductor device and manufacturing method |
Mar. 27, 2007 |
| 7115988 |
Bypass capacitor embedded flip chip package lid and stiffener |
Oct. 3, 2006 |
| 7112867 |
Resistive isolation between a body and a body contact |
Sep. 26, 2006 |
| 6949812 |
Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure |
Sep. 27, 2005 |
| 6787877 |
Method for filling structural gaps and integrated circuitry |
Sep. 7, 2004 |
| 6774454 |
Semiconductor device with an silicon insulator (SOI) substrate |
Aug. 10, 2004 |
| 6774416 |
Small area cascode FET structure operating at mm-wave frequencies |
Aug. 10, 2004 |
| 6724020 |
Semiconductor device and power amplifier using the same |
Apr. 20, 2004 |
| 6661068 |
Semiconductor device and method of providing regions of low substrate capacitance |
Dec. 9, 2003 |
| 6646320 |
Method of forming contact to poly-filled trench isolation region |
Nov. 11, 2003 |
| 6635537 |
Method of fabricating gate oxide |
Oct. 21, 2003 |
| 6576937 |
Semiconductor device and power amplifier using the same |
Jun. 10, 2003 |
| 6479880 |
Floating gate isolation device |
Nov. 12, 2002 |
| 6465867 |
Amorphous and gradated barrier layer for integrated circuit interconnects |
Oct. 15, 2002 |
| 6459134 |
Semiconductor devices which have analog and digital circuits integrated on a common substrate |
Oct. 1, 2002 |
| 6414368 |
Microcomputer with high density RAM on single chip |
Jul. 2, 2002 |
| 6404034 |
CMOS circuit with all-around dielectrically insulated source-drain regions |
Jun. 11, 2002 |
| 6388334 |
System and method for circuit rebuilding via backside access |
May. 14, 2002 |
| 6373099 |
Method of manufacturing a surrounding gate type MOFSET |
Apr. 16, 2002 |
| 6239472 |
MOSFET structure having improved source/drain junction performance |
May. 29, 2001 |
| 6127716 |
Heterojunction bipolar transistor and manufacturing method thereof |
Oct. 3, 2000 |
| 6114729 |
Plural wells structure in a semiconductor device |
Sep. 5, 2000 |
| 6031406 |
Single rail regulator |
Feb. 29, 2000 |
| 5689124 |
Semiconductor device |
Nov. 18, 1997 |
| 5559359 |
Microwave integrated circuit passive element structure and method for reducing signal propagation losses |
Sep. 24, 1996 |
| 5541424 |
Permeable base transistor having laminated layers |
Jul. 30, 1996 |
| 5508553 |
Transversal bipolar transistor integrated with another transistor commonly provided on a semiconductor substrate |
Apr. 16, 1996 |
| 5485017 |
Semiconductor device and method of manufacturing same |
Jan. 16, 1996 |
| 5475262 |
Functional substrates for packaging semiconductor chips |
Dec. 12, 1995 |
| 5455437 |
Semiconductor device having crystalline defect isolation regions |
Oct. 3, 1995 |
| 5449925 |
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
Sep. 12, 1995 |
| 5397903 |
Semiconductor substrate for gettering |
Mar. 14, 1995 |
| 5332912 |
Heterojunction bipolar transistor |
Jul. 26, 1994 |
| 5298787 |
Semiconductor embedded layer technology including permeable base transistor |
Mar. 29, 1994 |
| 5289015 |
Planar fet-seed integrated circuits |
Feb. 22, 1994 |
| 5266819 |
Self-aligned gallium arsenide/aluminum gallium arsenide collector-up heterojunction bipolar transistors capable of microwave applications and method |
Nov. 30, 1993 |
| 5185274 |
Self-aligned, self-passivated advanced dual lift-off heterojunction bipolar transistor method |
Feb. 9, 1993 |
| 5185534 |
Monolithic parallel connected transistor structure |
Feb. 9, 1993 |
| 5166768 |
Compound semiconductor integrated circuit device with an element isolating region |
Nov. 24, 1992 |
| 5047829 |
Monolithic p-i-n diode limiter |
Sep. 10, 1991 |
| 4979002 |
Optical photodiode switch array with zener diode |
Dec. 18, 1990 |
| 4972248 |
Multi-layer circuit structure with thin semiconductor channels |
Nov. 20, 1990 |
| 4960717 |
Fabrication of dielectrically isolated integrated circuit devices |
Oct. 2, 1990 |
| 4958201 |
Resonant tunneling minority carrier transistor |
Sep. 18, 1990 |
| 4939562 |
Heterojunction bipolar transistors and method of manufacture |
Jul. 3, 1990 |
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