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Class Information
Number: 257/521
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > Combined with pn junction isolation (e.g., isoplanar, locos) > Dielectric in groove > Sides of grooves along major crystal planes (e.g., (111), (100) planes, etc.)
Description: Subject matter wherein the device has grooves for the isolation whose sides are oriented along one or more major crystal planes of the semiconductor material in which the grooves are formed.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7456450 |
CMOS devices with hybrid channel orientations and method for fabricating the same |
Nov. 25, 2008 |
| 7397105 |
Apparatus to passivate inductively or capacitively coupled surface currents under capacitor structures |
Jul. 8, 2008 |
| 7382015 |
Semiconductor device including an element isolation portion having a recess |
Jun. 3, 2008 |
| 7335910 |
Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor |
Feb. 26, 2008 |
| 7208803 |
Method of forming a raised source/drain and a semiconductor device employing the same |
Apr. 24, 2007 |
| 7198981 |
Vacuum sealed surface acoustic wave pressure sensor |
Apr. 3, 2007 |
| 7196400 |
Semiconductor device with enhanced orientation ratio and method of manufacturing same |
Mar. 27, 2007 |
| 7183585 |
Semiconductor device and a method for the manufacture thereof |
Feb. 27, 2007 |
| 7045880 |
Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction |
May. 16, 2006 |
| 6964907 |
Method of etching a lateral trench under an extrinsic base and improved bipolar transistor |
Nov. 15, 2005 |
| 6960821 |
Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction |
Nov. 1, 2005 |
| 6930360 |
Semiconductor device and manufacturing method of the same |
Aug. 16, 2005 |
| 6903368 |
Thin-film transistor device, its manufacturing process, and image display using the device |
Jun. 7, 2005 |
| 6897095 |
Semiconductor process and integrated circuit having dual metal oxide gate dielectric with single metal gate electrode |
May. 24, 2005 |
| 6882026 |
Semiconductor apparatus and process for producing the same, and process for making via hole |
Apr. 19, 2005 |
| 6864534 |
Semiconductor wafer |
Mar. 8, 2005 |
| 6836001 |
Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench |
Dec. 28, 2004 |
| 6798038 |
Manufacturing method of semiconductor device with filling insulating film into trench |
Sep. 28, 2004 |
| 6787877 |
Method for filling structural gaps and integrated circuitry |
Sep. 7, 2004 |
| 6750516 |
Systems and methods for electrically isolating portions of wafers |
Jun. 15, 2004 |
| 6686642 |
Multi-level integrated circuit for wide-gap substrate bonding |
Feb. 3, 2004 |
| 6680520 |
Method and structure for forming precision MIM fusible circuit elements using fuses and antifuses |
Jan. 20, 2004 |
| 6639280 |
Semiconductor device and semiconductor chip using SOI substrate |
Oct. 28, 2003 |
| 6614073 |
SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPP |
Sep. 2, 2003 |
| 6537895 |
Method of forming shallow trench isolation in a silicon wafer |
Mar. 25, 2003 |
| 6528858 |
MOSFETs with differing gate dielectrics and method of formation |
Mar. 4, 2003 |
| 6525403 |
Semiconductor device having MIS field effect transistors or three-dimensional structure |
Feb. 25, 2003 |
| 6433402 |
Selective copper alloy deposition |
Aug. 13, 2002 |
| 6424048 |
Semiconductor chip, semiconductor device, circuit board and electronic equipment and production methods for them |
Jul. 23, 2002 |
| 6417571 |
Single grain copper interconnect with bamboo structure in a trench |
Jul. 9, 2002 |
| 6285073 |
Contact structure and method of formation |
Sep. 4, 2001 |
| 6242788 |
Semiconductor device and a method of manufacturing the same |
Jun. 5, 2001 |
| 6214698 |
Shallow trench isolation methods employing gap filling doped silicon oxide dielectric layer |
Apr. 10, 2001 |
| 6040597 |
Isolation boundaries in flash memory cores |
Mar. 21, 2000 |
| 5854509 |
Method of fabricating semiconductor device and semiconductor device |
Dec. 29, 1998 |
| 5591665 |
Process for producing a semiconductor structure including a plurality of vertical semiconductor devices and at least one lateral semiconductor device integrated in a semiconductor body |
Jan. 7, 1997 |
| 5587612 |
Semiconductor device having semiconductor active and dummy regions with the dummy regions lower in height than the active regions |
Dec. 24, 1996 |
| 5583368 |
Stacked devices |
Dec. 10, 1996 |
| 5548154 |
Isoplanar isolated active regions |
Aug. 20, 1996 |
| 5539241 |
Monolithic passive component |
Jul. 23, 1996 |
| 5468978 |
Forming B.sub.1-x C.sub.x semiconductor devices by chemical vapor deposition |
Nov. 21, 1995 |
| 5401998 |
Trench isolation using doped sidewalls |
Mar. 28, 1995 |
| 5306950 |
Electrode assembly for a semiconductor device |
Apr. 26, 1994 |
| 5250837 |
Method for dielectrically isolating integrated circuits using doped oxide sidewalls |
Oct. 5, 1993 |
| 4807012 |
IC which eliminates support bias influence on dielectrically isolated components |
Feb. 21, 1989 |
| 4670769 |
Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation |
Jun. 2, 1987 |
| 4635090 |
Tapered groove IC isolation |
Jan. 6, 1987 |
| 4608582 |
Semiconductor device having non-saturating I-V characteristics and integrated circuit structure including same |
Aug. 26, 1986 |
| 4569698 |
Method of forming isolated device regions by selective successive etching of composite masking layers and semiconductor material prior to ion implantation |
Feb. 11, 1986 |
| RE31937 |
Semiconductor device and method for its preparation |
Jul. 2, 1985 |
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