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Class Information
Number: 257/520
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > Combined with pn junction isolation (e.g., isoplanar, locos) > Dielectric in groove > Conductive filling in dielectric-lined groove (e.g., polysilicon backfill)
Description: Subject matter wherein the device has the grooves filled with a lining of dielectric material together with a conductive filling in the groove, the conductive filling being separated from the semiconductor material by the dielectric lining of the groove.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7459749 |
High speed power mosfet |
Dec. 2, 2008 |
| 7429778 |
Methods for forming wiring and electrode |
Sep. 30, 2008 |
| 7420262 |
Electronic component and semiconductor wafer, and method for producing the same |
Sep. 2, 2008 |
| 7420258 |
Semiconductor device having trench structures and method |
Sep. 2, 2008 |
| 7408224 |
Vertical transistor structure for use in semiconductor device and method of forming the same |
Aug. 5, 2008 |
| 7393770 |
Backside method for fabricating semiconductor components with conductive interconnects |
Jul. 1, 2008 |
| 7385275 |
Shallow trench isolation method for shielding trapped charge in a semiconductor device |
Jun. 10, 2008 |
| 7382015 |
Semiconductor device including an element isolation portion having a recess |
Jun. 3, 2008 |
| 7335946 |
Structures of and methods of fabricating trench-gated MIS devices |
Feb. 26, 2008 |
| 7332772 |
Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same |
Feb. 19, 2008 |
| 7282779 |
Device, method of manufacture thereof, manufacturing method for active matrix substrate, electro-optical apparatus and electronic apparatus |
Oct. 16, 2007 |
| 7279770 |
Isolation techniques for reducing dark current in CMOS image sensors |
Oct. 9, 2007 |
| 7259442 |
Selectively doped trench device isolation |
Aug. 21, 2007 |
| 7230312 |
Transistor having vertical junction edge and method of manufacturing the same |
Jun. 12, 2007 |
| 7161225 |
Reducing shunts in memories with phase-change material |
Jan. 9, 2007 |
| 7154159 |
Trench isolation structure and method of forming the same |
Dec. 26, 2006 |
| 7151314 |
Semiconductor device with superimposed poly-silicon plugs |
Dec. 19, 2006 |
| 7115973 |
Dual-sided semiconductor device with a resistive element that requires little silicon surface area |
Oct. 3, 2006 |
| 7115964 |
Manufacturing method for SOI semiconductor device, and SOI semiconductor device |
Oct. 3, 2006 |
| 7095119 |
Semiconductor device |
Aug. 22, 2006 |
| 7053463 |
High-voltage integrated vertical resistor and manufacturing process thereof |
May. 30, 2006 |
| 7045857 |
Termination for trench MIS device having implanted drain-drift region |
May. 16, 2006 |
| 7042063 |
Semiconductor wafer, semiconductor device, and process for manufacturing the semiconductor device |
May. 9, 2006 |
| 7038275 |
Buried-gate-type semiconductor device |
May. 2, 2006 |
| 7033867 |
Shallow trench antifuse and methods of making and using same |
Apr. 25, 2006 |
| 6995439 |
Method of fabricating low dielectric constant dielectric films |
Feb. 7, 2006 |
| 6995449 |
Deep trench isolation region with reduced-size cavities in overlying field oxide |
Feb. 7, 2006 |
| 6989557 |
Bipolar junction transistor and fabricating method |
Jan. 24, 2006 |
| 6953959 |
Integrated circuit devices including self-aligned contacts with increased alignment margin |
Oct. 11, 2005 |
| 6946716 |
Electroplated interconnection structures on integrated circuit chips |
Sep. 20, 2005 |
| 6940145 |
Termination structure for a semiconductor device |
Sep. 6, 2005 |
| 6933576 |
Semiconductor device including a predetermined film formed at a border between dielectric films |
Aug. 23, 2005 |
| 6930360 |
Semiconductor device and manufacturing method of the same |
Aug. 16, 2005 |
| 6919612 |
Biasable isolation regions using epitaxially grown silicon between the isolation regions |
Jul. 19, 2005 |
| 6906419 |
Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same |
Jun. 14, 2005 |
| 6878989 |
Power MOSFET semiconductor device and method of manufacturing the same |
Apr. 12, 2005 |
| 6867471 |
Universal package for an electronic component with a semiconductor chip and method for producing the universal package |
Mar. 15, 2005 |
| 6867473 |
Plating a conductive material on a dielectric material |
Mar. 15, 2005 |
| 6864151 |
Method of forming shallow trench isolation using deep trench isolation |
Mar. 8, 2005 |
| 6861326 |
Methods of forming semiconductor circuitry |
Mar. 1, 2005 |
| 6849520 |
Method and device for forming an STI type isolation in a semiconductor device |
Feb. 1, 2005 |
| 6835997 |
Thyristor-based device with trench dielectric material |
Dec. 28, 2004 |
| 6828651 |
Integrated structure |
Dec. 7, 2004 |
| 6815714 |
Conductive structure in a semiconductor material |
Nov. 9, 2004 |
| 6812525 |
Trench fill process |
Nov. 2, 2004 |
| 6812486 |
Conductive structure and method of forming the structure |
Nov. 2, 2004 |
| 6798037 |
Isolation trench structure for integrated devices |
Sep. 28, 2004 |
| 6787876 |
Semiconductor device |
Sep. 7, 2004 |
| 6787877 |
Method for filling structural gaps and integrated circuitry |
Sep. 7, 2004 |
| 6780732 |
DRAM access transistor |
Aug. 24, 2004 |
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