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Browse by Category: Main > Physics
Class Information
Number: 257/518
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > Combined with pn junction isolation (e.g., isoplanar, locos) > Dielectric in groove > With bipolar transistor structure > With polycrystalline connecting region (e.g., polysilicon base contact)
Description: Subject matter wherein the device has portions of polycrystalline (i.e., made up of many small crystals) semiconductor material serving as electrical contacts or connections.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8476734 Semiconductor component and methods for producing a semiconductor component Jul. 2, 2013
8334451 Discrete and integrated photo voltaic solar cells Dec. 18, 2012
8242605 Semiconductor device and method of manufacturing the same Aug. 14, 2012
8018006 Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation Sep. 13, 2011
7816264 Wafer processing method Oct. 19, 2010
7629646 Trench MOSFET with terraced gate and manufacturing method thereof Dec. 8, 2009
7511356 Voltage-controlled semiconductor inductor and method Mar. 31, 2009
7507669 Gap tuning for surface micromachined structures in an epitaxial reactor Mar. 24, 2009
7439558 Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement Oct. 21, 2008
7026690 Memory devices and electronic systems comprising integrated bipolar and FET devices Apr. 11, 2006
6879021 Electronically programmable antifuse and circuits made therewith Apr. 12, 2005
6856000 Reduce 1/f noise in NPN transistors without degrading the properties of PNP transistors in integrated circuit technologies Feb. 15, 2005
6828650 Bipolar junction transistor structure with improved current gain characteristics Dec. 7, 2004
6690083 Use of silicide blocking layer to create high valued resistor and diode for sub-1V bandgap Feb. 10, 2004
6646320 Method of forming contact to poly-filled trench isolation region Nov. 11, 2003
6534820 Integrated dynamic memory cell having a small area of extent, and a method for its production Mar. 18, 2003
6525403 Semiconductor device having MIS field effect transistors or three-dimensional structure Feb. 25, 2003
6495897 Integrated circuit having etch-resistant layer substantially covering shallow trench regions Dec. 17, 2002
6433387 Lateral bipolar transistor Aug. 13, 2002
6376880 High-speed lateral bipolar device in SOI process Apr. 23, 2002
6329699 Bipolar transistor with trenched-groove isolation regions Dec. 11, 2001
6093953 Isolation regions and methods of forming isolation regions Jul. 25, 2000
6073343 Method of providing a variable guard ring width between detectors on a substrate Jun. 13, 2000
6005284 Semiconductor device and its manufacturing method Dec. 21, 1999
5998816 Sensor element with removal resistance region Dec. 7, 1999
5982021 Vertical polysilicon diode compatible with CMOS/BiCMOS integrated circuit processes Nov. 9, 1999
5914523 Semiconductor device trench isolation structure with polysilicon bias voltage contact Jun. 22, 1999
5910676 Method for forming a thick base oxide in a BiCMOS process Jun. 8, 1999
5909623 Manufacturing method of semiconductor device Jun. 1, 1999
5877539 Bipolar transistor with a reduced collector series resistance Mar. 2, 1999
5861659 Semiconductor device Jan. 19, 1999
5856700 Semiconductor device with doped semiconductor and dielectric trench sidewall layers Jan. 5, 1999
5856228 Manufacturing method for making bipolar device having double polysilicon structure Jan. 5, 1999
5854503 Maximization of low dielectric constant material between interconnect traces of a semiconductor circuit Dec. 29, 1998
5847438 Bonded IC substrate with a high breakdown voltage and large current capabilities Dec. 8, 1998
5834800 Heterojunction bipolar transistor having mono crystalline SiGe intrinsic base and polycrystalline SiGe and Si extrinsic base regions Nov. 10, 1998
5763932 Isolation regions and methods of forming isolation regions Jun. 9, 1998
5733791 Methods for fabrication of bipolar device having high ratio of emitter to base area Mar. 31, 1998
5604374 Semiconductor device and manufacturing method thereof Feb. 18, 1997
5581112 Lateral bipolar transistor having buried base contact Dec. 3, 1996
5548155 Bipolar type semiconductor device having small parasitic capacitance, small dimensions, and small variation in transistor characteristics Aug. 20, 1996
5541124 Method for making bipolar transistor having double polysilicon structure Jul. 30, 1996
5506157 Method for fabricating pillar bipolar transistor Apr. 9, 1996
5504364 CMOS locos isolation for self-aligned NPN BJT in a BiCMOS process Apr. 2, 1996
5468989 Semiconductor integrated circuit device having an improved vertical bipolar transistor structure Nov. 21, 1995
5444285 Complementary bipolar polysilicon emitter devices Aug. 22, 1995
5420457 Lateral high-voltage PNP transistor May. 30, 1995
5420454 Selective epitaxial silicon for intrinsic-extrinsic base link May. 30, 1995
5397912 Lateral bipolar transistor Mar. 14, 1995
5365090 Hetero bipolar transistor and method of manufacturing the same Nov. 15, 1994

1 2 3 4










 
 
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