| |
 |
|
Class Information
Number: 257/517
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > Combined with pn junction isolation (e.g., isoplanar, locos) > Dielectric in groove > With bipolar transistor structure
Description: Subject matter wherein the device contains at least one bipolar transistor structure.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7459766 |
Semiconductor bipolar transistor |
Dec. 2, 2008 |
| 7420228 |
Bipolar transistor comprising carbon-doped semiconductor |
Sep. 2, 2008 |
| 7358545 |
Bipolar junction transistor |
Apr. 15, 2008 |
| 7354840 |
Method for opto-electronic integration on a SOI substrate |
Apr. 8, 2008 |
| 7339254 |
SOI substrate for integration of opto-electronics with SiGe BiCMOS |
Mar. 4, 2008 |
| 7319263 |
Semiconductor component with switching element configured to reduce parasitic current flow |
Jan. 15, 2008 |
| 7288827 |
Self-aligned mask formed utilizing differential oxidation rates of materials |
Oct. 30, 2007 |
| 7247923 |
Semiconductor device having a lateral MOSFET and combined IC using the same |
Jul. 24, 2007 |
| 7026690 |
Memory devices and electronic systems comprising integrated bipolar and FET devices |
Apr. 11, 2006 |
| 6989557 |
Bipolar junction transistor and fabricating method |
Jan. 24, 2006 |
| 6977425 |
Semiconductor device having a lateral MOSFET and combined IC using the same |
Dec. 20, 2005 |
| 6972472 |
Quasi self-aligned single polysilicon bipolar active device with intentional emitter window undercut |
Dec. 6, 2005 |
| 6972466 |
Bipolar transistors with low base resistance for CMOS integrated circuits |
Dec. 6, 2005 |
| 6964907 |
Method of etching a lateral trench under an extrinsic base and improved bipolar transistor |
Nov. 15, 2005 |
| 6911715 |
Bipolar transistors and methods of manufacturing the same |
Jun. 28, 2005 |
| 6903386 |
Transistor with means for providing a non-silicon-based emitter |
Jun. 7, 2005 |
| 6853017 |
Bipolar transistor structure with ultra small polysilicon emitter |
Feb. 8, 2005 |
| 6853048 |
Bipolar transistor having an isolation structure located under the base, emitter and collector and a method of manufacture thereof |
Feb. 8, 2005 |
| 6847094 |
Contact structure on a deep region formed in a semiconductor substrate |
Jan. 25, 2005 |
| 6844594 |
Minimally spaced gates and word lines |
Jan. 18, 2005 |
| 6838709 |
Bipolar transistor |
Jan. 4, 2005 |
| 6828651 |
Integrated structure |
Dec. 7, 2004 |
| 6828649 |
Semiconductor device having an interconnect that electrically connects a conductive material and a doped layer, and a method of manufacture therefor |
Dec. 7, 2004 |
| 6806550 |
Evaluation configuration for semiconductor memories |
Oct. 19, 2004 |
| 6798041 |
Method and system for providing a power lateral PNP transistor using a buried power buss |
Sep. 28, 2004 |
| 6770952 |
Integrated process for high voltage and high performance silicon-on-insulator bipolar devices |
Aug. 3, 2004 |
| 6768183 |
Semiconductor device having bipolar transistors |
Jul. 27, 2004 |
| 6750618 |
Light emitting device and a method of manufacturing the same |
Jun. 15, 2004 |
| 6740913 |
MOS transistor using mechanical stress to control short channel effects |
May. 25, 2004 |
| 6703685 |
Super self-aligned collector device for mono-and hetero bipolar junction transistors |
Mar. 9, 2004 |
| 6693325 |
Semiconductor device having silicon on insulator and fabricating method therefor |
Feb. 17, 2004 |
| 6674144 |
Process for forming damascene-type isolation structure for integrated circuit |
Jan. 6, 2004 |
| 6646320 |
Method of forming contact to poly-filled trench isolation region |
Nov. 11, 2003 |
| 6627933 |
Method of forming minimally spaced word lines |
Sep. 30, 2003 |
| 6600205 |
Method for making low voltage transistors with increased breakdown voltage to substrate having three different MOS transistors |
Jul. 29, 2003 |
| 6559505 |
Power integrated circuit with vertical current flow and related manufacturing process |
May. 6, 2003 |
| 6555891 |
SOI hybrid structure with selective epitaxial growth of silicon |
Apr. 29, 2003 |
| 6552407 |
Communication module having a structure for reducing crosstalk |
Apr. 22, 2003 |
| 6538294 |
Trenched semiconductor device with high breakdown voltage |
Mar. 25, 2003 |
| 6525403 |
Semiconductor device having MIS field effect transistors or three-dimensional structure |
Feb. 25, 2003 |
| 6476450 |
BICMOS semiconductor integrated circuit device and fabrication process thereof |
Nov. 5, 2002 |
| 6469362 |
High-gain pnp bipolar junction transistor in a CMOS device and method for forming the same |
Oct. 22, 2002 |
| 6452246 |
Semiconductor device having an improved isolation structure, and method of manufacturing the semiconductor device |
Sep. 17, 2002 |
| 6448614 |
Circuit-incorporating photosensitive device |
Sep. 10, 2002 |
| 6420771 |
Trench isolated bipolar transistor structure integrated with CMOS technology |
Jul. 16, 2002 |
| 6376880 |
High-speed lateral bipolar device in SOI process |
Apr. 23, 2002 |
| 6365957 |
Lateral bipolar transistor |
Apr. 2, 2002 |
| 6329699 |
Bipolar transistor with trenched-groove isolation regions |
Dec. 11, 2001 |
| 6127718 |
Semiconductor device and method of manufacturing the same |
Oct. 3, 2000 |
| 6064106 |
Bipolar transistor having isolation regions |
May. 16, 2000 |
|
|
|
