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Class Information
Number: 257/514
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > Combined with pn junction isolation (e.g., isoplanar, locos) > Dielectric in groove > Vertical walled groove > With active junction abutting groove (e.g., "walled emitter")
Description: Subject matter wherein at least one pn junction forming a part of an active solid-state device terminates against the dielectric filling in the vertical walled isolation groove.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7358108 |
CMOS image sensor and method for fabricating the same |
Apr. 15, 2008 |
| 7268059 |
Methods for securing components of semiconductor device assemblies to each other with adhesive materials that include pressure-sensitive and curable components |
Sep. 11, 2007 |
| 7105908 |
SRAM cell having stepped boundary regions and methods of fabrication |
Sep. 12, 2006 |
| 7053451 |
Semiconductor device having impurity region under isolation region |
May. 30, 2006 |
| 6894361 |
Semiconductor device |
May. 17, 2005 |
| 6875649 |
Methods for manufacturing integrated circuit devices including an isolation region defining an active region area |
Apr. 5, 2005 |
| 6876055 |
Semiconductor device and its production method |
Apr. 5, 2005 |
| 6867472 |
Reduced hot carrier induced parasitic sidewall device activation in isolated buried channel devices by conductive buried channel depth optimization |
Mar. 15, 2005 |
| 6868001 |
Semiconductor memory device |
Mar. 15, 2005 |
| 6828650 |
Bipolar junction transistor structure with improved current gain characteristics |
Dec. 7, 2004 |
| 6762447 |
Field-shield-trench isolation for gigabit DRAMs |
Jul. 13, 2004 |
| 6710421 |
Semiconductor devices and methods for manufacturing the same |
Mar. 23, 2004 |
| 6703644 |
Method for producing a semiconductor configuration |
Mar. 9, 2004 |
| 6696743 |
Semiconductor transistor having gate electrode and/or gate wiring |
Feb. 24, 2004 |
| 6683364 |
Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same |
Jan. 27, 2004 |
| 6670691 |
Shallow trench isolation fill process |
Dec. 30, 2003 |
| 6661077 |
Semiconductor device including primary connecting plug and an auxiliary connecting plug |
Dec. 9, 2003 |
| 6646320 |
Method of forming contact to poly-filled trench isolation region |
Nov. 11, 2003 |
| 6586804 |
Shallow trench isolation type semiconductor device and method of manufacturing the same |
Jul. 1, 2003 |
| 6555891 |
SOI hybrid structure with selective epitaxial growth of silicon |
Apr. 29, 2003 |
| 6545302 |
Image sensor capable of decreasing leakage current between diodes and method for fabricating the same |
Apr. 8, 2003 |
| 6525403 |
Semiconductor device having MIS field effect transistors or three-dimensional structure |
Feb. 25, 2003 |
| 6521959 |
SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same |
Feb. 18, 2003 |
| 6518641 |
Deep slit isolation with controlled void |
Feb. 11, 2003 |
| 6465869 |
Compensation component and process for producing the compensation component |
Oct. 15, 2002 |
| 6459142 |
Power MOSFET |
Oct. 1, 2002 |
| 6433400 |
Semiconductor fabrication employing barrier atoms incorporated at the edges of a trench isolation structure |
Aug. 13, 2002 |
| 6380599 |
Method and apparatus for trench isolation process with pad gate and trench edge spacer elimination |
Apr. 30, 2002 |
| 6339243 |
High voltage device and method for fabricating the same |
Jan. 15, 2002 |
| 6329699 |
Bipolar transistor with trenched-groove isolation regions |
Dec. 11, 2001 |
| 6294817 |
Source/drain-on insulator (S/DOI) field effect transistor using oxidized amorphous silicon and method of fabrication |
Sep. 25, 2001 |
| 6261920 |
N-channel MOSFET having STI structure and method for manufacturing the same |
Jul. 17, 2001 |
| 6172407 |
Source/drain and lightly doped drain formation at post interlevel dielectric isolation with high-K gate electrode design |
Jan. 9, 2001 |
| 6144086 |
Structure for improved latch-up using dual depth STI with impurity implant |
Nov. 7, 2000 |
| 6118152 |
Semiconductor device and method of manufacturing the same |
Sep. 12, 2000 |
| 6040617 |
Structure to provide junction breakdown stability for deep trench devices |
Mar. 21, 2000 |
| 6020621 |
Stress-free shallow trench isolation |
Feb. 1, 2000 |
| 6008521 |
Integrated circuit employing simultaneously formed isolation and transistor trenches |
Dec. 28, 1999 |
| 5966598 |
Semiconductor device having an improved trench isolation and method for forming the same |
Oct. 12, 1999 |
| 5877539 |
Bipolar transistor with a reduced collector series resistance |
Mar. 2, 1999 |
| 5854509 |
Method of fabricating semiconductor device and semiconductor device |
Dec. 29, 1998 |
| 5789769 |
Semiconductor device having an improved trench isolation |
Aug. 4, 1998 |
| 5773868 |
Semiconductor device and method of manufacturing the same |
Jun. 30, 1998 |
| 5733791 |
Methods for fabrication of bipolar device having high ratio of emitter to base area |
Mar. 31, 1998 |
| 5635753 |
Integrated circuit |
Jun. 3, 1997 |
| 5598022 |
Optical semiconductor device |
Jan. 28, 1997 |
| 5583368 |
Stacked devices |
Dec. 10, 1996 |
| 5543655 |
Transistor structure for improved base-collector junction characteristics |
Aug. 6, 1996 |
| 5523614 |
Bipolar transistor having enhanced high speed operation through reduced base leakage current |
Jun. 4, 1996 |
| 5523593 |
Compound semiconductor integrated circuit and optical regenerative repeater using the same |
Jun. 4, 1996 |
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