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Class Information
Number: 257/514
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > Combined with pn junction isolation (e.g., isoplanar, locos) > Dielectric in groove > Vertical walled groove > With active junction abutting groove (e.g., "walled emitter")
Description: Subject matter wherein at least one pn junction forming a part of an active solid-state device terminates against the dielectric filling in the vertical walled isolation groove.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8710620 Method of manufacturing semiconductor devices using ion implantation Apr. 29, 2014
8541865 Semiconductor device with improved ESD protection Sep. 24, 2013
8410554 Method, structure and design structure for customizing history effects of SOI circuits Apr. 2, 2013
8344523 Conductive composition Jan. 1, 2013
8334451 Discrete and integrated photo voltaic solar cells Dec. 18, 2012
8159019 Semiconductor memory device with stacked gate including charge storage layer and control gate and method of manufacturing the same Apr. 17, 2012
7982283 Semiconductor device and method for manufacturing the same Jul. 19, 2011
7951670 Flash memory cell with split gate structure and method for forming the same May. 31, 2011
7816264 Wafer processing method Oct. 19, 2010
7700979 Semiconductor device having bulb-shaped recess gate and method for fabricating the same Apr. 20, 2010
7659159 Method of manufacturing a flash memory device Feb. 9, 2010
7358108 CMOS image sensor and method for fabricating the same Apr. 15, 2008
7268059 Methods for securing components of semiconductor device assemblies to each other with adhesive materials that include pressure-sensitive and curable components Sep. 11, 2007
7105908 SRAM cell having stepped boundary regions and methods of fabrication Sep. 12, 2006
7053451 Semiconductor device having impurity region under isolation region May. 30, 2006
6894361 Semiconductor device May. 17, 2005
6875649 Methods for manufacturing integrated circuit devices including an isolation region defining an active region area Apr. 5, 2005
6876055 Semiconductor device and its production method Apr. 5, 2005
6868001 Semiconductor memory device Mar. 15, 2005
6867472 Reduced hot carrier induced parasitic sidewall device activation in isolated buried channel devices by conductive buried channel depth optimization Mar. 15, 2005
6828650 Bipolar junction transistor structure with improved current gain characteristics Dec. 7, 2004
6762447 Field-shield-trench isolation for gigabit DRAMs Jul. 13, 2004
6710421 Semiconductor devices and methods for manufacturing the same Mar. 23, 2004
6703644 Method for producing a semiconductor configuration Mar. 9, 2004
6696743 Semiconductor transistor having gate electrode and/or gate wiring Feb. 24, 2004
6683364 Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same Jan. 27, 2004
6670691 Shallow trench isolation fill process Dec. 30, 2003
6661077 Semiconductor device including primary connecting plug and an auxiliary connecting plug Dec. 9, 2003
6646320 Method of forming contact to poly-filled trench isolation region Nov. 11, 2003
6586804 Shallow trench isolation type semiconductor device and method of manufacturing the same Jul. 1, 2003
6555891 SOI hybrid structure with selective epitaxial growth of silicon Apr. 29, 2003
6545302 Image sensor capable of decreasing leakage current between diodes and method for fabricating the same Apr. 8, 2003
6525403 Semiconductor device having MIS field effect transistors or three-dimensional structure Feb. 25, 2003
6521959 SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same Feb. 18, 2003
6518641 Deep slit isolation with controlled void Feb. 11, 2003
6465869 Compensation component and process for producing the compensation component Oct. 15, 2002
6459142 Power MOSFET Oct. 1, 2002
6433400 Semiconductor fabrication employing barrier atoms incorporated at the edges of a trench isolation structure Aug. 13, 2002
6380599 Method and apparatus for trench isolation process with pad gate and trench edge spacer elimination Apr. 30, 2002
6339243 High voltage device and method for fabricating the same Jan. 15, 2002
6329699 Bipolar transistor with trenched-groove isolation regions Dec. 11, 2001
6294817 Source/drain-on insulator (S/DOI) field effect transistor using oxidized amorphous silicon and method of fabrication Sep. 25, 2001
6261920 N-channel MOSFET having STI structure and method for manufacturing the same Jul. 17, 2001
6172407 Source/drain and lightly doped drain formation at post interlevel dielectric isolation with high-K gate electrode design Jan. 9, 2001
6144086 Structure for improved latch-up using dual depth STI with impurity implant Nov. 7, 2000
6118152 Semiconductor device and method of manufacturing the same Sep. 12, 2000
6040617 Structure to provide junction breakdown stability for deep trench devices Mar. 21, 2000
6020621 Stress-free shallow trench isolation Feb. 1, 2000
6008521 Integrated circuit employing simultaneously formed isolation and transistor trenches Dec. 28, 1999
5966598 Semiconductor device having an improved trench isolation and method for forming the same Oct. 12, 1999

1 2 3

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