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Class Information
Number: 257/512
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > Combined with pn junction isolation (e.g., isoplanar, locos) > Dielectric in groove > With complementary (npn and pnp) bipolar transistor structures > Complementary devices share common active region (e.g., integrated injection logic, i 2 l)
Description: Subject matter wherein the device includes structures wherein a pnp transistor shares a semiconductor region with an npn transistor, e.g., where the base region of the pnp transistor serves also as the emitter of the npn transistor and the collector of the pnp transistor serves as the base region of the npn transistor.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8710553 Method and apparatus for connecting signal lines of multiple layers to certain contacts while preventing connections with other contacts Apr. 29, 2014
8686512 Elevation of transistor channels to reduce impact of shallow trench isolation on transistor performance Apr. 1, 2014
8574982 Implementing eDRAM stacked FET structure Nov. 5, 2013
8445888 Resistive random access memory using rare earth scandate thin film as storage medium May. 21, 2013
8421184 Semiconductor device Apr. 16, 2013
8354662 Semiconducting nanoparticles with surface modification Jan. 15, 2013
8344523 Conductive composition Jan. 1, 2013
8343813 Resistive-switching memory elements having improved switching characteristics Jan. 1, 2013
8319289 Power MISFET, semiconductor device and DC/DC converter Nov. 27, 2012
8278689 Memory and interconnect design in fine pitch Oct. 2, 2012
8093131 Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof Jan. 10, 2012
8022443 Memory and interconnect design in fine pitch Sep. 20, 2011
7999328 Isolation trench having first and second trench areas of different widths Aug. 16, 2011
7816264 Wafer processing method Oct. 19, 2010
RE41477 Semiconductor device with a reduced mask count buried layer Aug. 10, 2010
7626269 Semiconductor constructions and assemblies, and electronic systems Dec. 1, 2009
7598819 Electronic circuit with transistors sharing one and the same well Oct. 6, 2009
7476941 Semiconductor integrated circuit device and fabrication process thereof Jan. 13, 2009
7342293 Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same Mar. 11, 2008
7329938 Semiconductor integrated circuit Feb. 12, 2008
7304390 Anisotropic conductive sheet and manufacture thereof Dec. 4, 2007
7235857 Power semiconductor device Jun. 26, 2007
7129562 Dual-height cell with variable width power rail architecture Oct. 31, 2006
7071527 Semiconductor element and manufacturing method thereof Jul. 4, 2006
7067899 Semiconductor integrated circuit device Jun. 27, 2006
6960818 Recessed shallow trench isolation structure nitride liner and method for making same Nov. 1, 2005
6838713 Dual-height cell with variable width power rail architecture Jan. 4, 2005
6828649 Semiconductor device having an interconnect that electrically connects a conductive material and a doped layer, and a method of manufacture therefor Dec. 7, 2004
6803622 Semiconductor device and method of manufacturing the same Oct. 12, 2004
6750527 Semiconductor integrated circuit device having a plurality of wells, test method of testing the semiconductor integrated circuit device, and test device which executes the test method Jun. 15, 2004
6700158 Trench corner protection for trench MOSFET Mar. 2, 2004
6674148 Lateral components in power semiconductor devices Jan. 6, 2004
6624497 Semiconductor device with a reduced mask count buried layer Sep. 23, 2003
6525403 Semiconductor device having MIS field effect transistors or three-dimensional structure Feb. 25, 2003
6469362 High-gain pnp bipolar junction transistor in a CMOS device and method for forming the same Oct. 22, 2002
6441444 Semiconductor device having a nitride barrier for preventing formation of structural defects Aug. 27, 2002
6365957 Lateral bipolar transistor Apr. 2, 2002
6285073 Contact structure and method of formation Sep. 4, 2001
6127718 Semiconductor device and method of manufacturing the same Oct. 3, 2000
6060346 Semiconductor device and method for manufacturing the same May. 9, 2000
6049131 Device formed by selective deposition of refractory metal of less than 300 Angstroms of thickness Apr. 11, 2000
5949125 Semiconductor device having field isolation with a mesa or mesas Sep. 7, 1999
5945726 Lateral bipolar transistor Aug. 31, 1999
5915186 Method of manufacturing heterojunction bipolar device having Si.sub.1-x Ge.sub.x base Jun. 22, 1999
5521399 Advanced silicon on oxide semiconductor device structure for BiCMOS integrated circuit May. 28, 1996
5481130 Semiconductor IIL device with dielectric and diffusion isolation Jan. 2, 1996
5376822 Heterojunction type of compound semiconductor integrated circuit Dec. 27, 1994
4947230 Base-coupled transistor logic Aug. 7, 1990
4935800 Semiconductor integrated circuit Jun. 19, 1990
4933737 Polysilon contacts to IC mesas Jun. 12, 1990

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