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Class Information
Number: 257/510
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > Combined with pn junction isolation (e.g., isoplanar, locos) > Dielectric in groove
Description: Subject matter wherein the electrical insulator material forming part of the isolation means is located in grooves in the semiconductor surface (e.g., LOCOS)


Sub-classes under this class:

Class Number Class Name Patents
257/520 Conductive filling in dielectric-lined groove (e.g., polysilicon backfill) 259
257/519 Including heavily doped channel stop region adjacent groove 155
257/521 Sides of grooves along major crystal planes (e.g., (111), (100) planes, etc.) 63
257/513 Vertical walled groove 303
257/515 With active junction abutting groove (e.g., "walled emitter") 108
257/517 With bipolar transistor structure 233
257/511 With complementary (npn and pnp) bipolar transistor structures 126
257/516 With passive component (e.g., resistor, capacitor, etc.) 199


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
7453135 Semiconductor device and method of manufacturing the same Nov. 18, 2008
7449763 Method of fabricating cell of nonvolatile memory device with floating gate Nov. 11, 2008
7439605 Semiconductor device and method for manufacturing the same Oct. 21, 2008
7439587 Semiconductor device and method of manufacturing the same Oct. 21, 2008
7439602 Semiconductor device and its manufacturing method Oct. 21, 2008
7439604 Method of forming dual gate dielectric layer Oct. 21, 2008
7420259 Semiconductor device having two-layered charge storage electrode Sep. 2, 2008
7417298 High voltage insulated-gate transistor Aug. 26, 2008
7414298 Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same Aug. 19, 2008
7411268 Fabricating deeper and shallower trenches in semiconductor structures Aug. 12, 2008
7411269 Isolation structure configurations for modifying stresses in semiconductor devices Aug. 12, 2008
7405461 Semiconductor device and method for manufacturing semiconductor device Jul. 29, 2008
7402886 Memory with self-aligned trenches for narrow gap isolation regions Jul. 22, 2008
7402885 LOCOS on SOI and HOT semiconductor device and method for manufacturing Jul. 22, 2008
7397104 Semiconductor integrated circuit device and a method of manufacturing the same Jul. 8, 2008
7397105 Apparatus to passivate inductively or capacitively coupled surface currents under capacitor structures Jul. 8, 2008
7397128 Semiconductor device and method of manufacturing the same Jul. 8, 2008
7391077 Vertical type semiconductor device Jun. 24, 2008
7391096 STI structure Jun. 24, 2008
7388263 Shallow trench isolation dummy pattern and layout method using the same Jun. 17, 2008
7385256 Transistor arrangement in monocrystalline substrate having stress exerting insulators Jun. 10, 2008
7384854 Method of forming low capacitance ESD robust diodes Jun. 10, 2008
7382015 Semiconductor device including an element isolation portion having a recess Jun. 3, 2008
7382016 Semiconductor device and method of manufacturing the same Jun. 3, 2008
7368800 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry May. 6, 2008
7358588 Trench isolation type semiconductor device which prevents a recess from being formed in a field region Apr. 15, 2008
7358587 Semiconductor structures Apr. 15, 2008
7358586 Silicon-on-insulator wafer having reentrant shape dielectric trenches Apr. 15, 2008
7358558 Flash memory device Apr. 15, 2008
7358551 Structure and method for improved stress and yield in pFETs with embedded SiGe source/drain regions Apr. 15, 2008
7355242 Semiconductor device Apr. 8, 2008
7354786 Sensor element with trenched cavity Apr. 8, 2008
7354834 Semiconductor devices and methods to form trenches in semiconductor devices Apr. 8, 2008
7355262 Diffusion topography engineering for high performance CMOS fabrication Apr. 8, 2008
7351661 Semiconductor device having trench isolation layer and a method of forming the same Apr. 1, 2008
7348638 Rotational shear stress for charge carrier mobility modification Mar. 25, 2008
7348639 Method for providing a deep connection to substrate or buried layer in a semiconductor device Mar. 25, 2008
7339251 Shallow trench isolation structure and formation method thereof Mar. 4, 2008
7339252 Semiconductor having thick dielectric regions Mar. 4, 2008
7339253 Retrograde trench isolation structures Mar. 4, 2008
7332789 Isolation trenches for memory devices Feb. 19, 2008
7332407 Method and apparatus for a semiconductor device with a high-k gate dielectric Feb. 19, 2008
7326983 Selective silicon-on-insulator isolation structure and method Feb. 5, 2008
7327009 Selective nitride liner formation for shallow trench isolation Feb. 5, 2008
7323745 Top drain MOSFET Jan. 29, 2008
7315073 Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrode Jan. 1, 2008
7304365 Semiconductor device and method of producing the same Dec. 4, 2007
7297995 Transparent metal shielded isolation for image sensors Nov. 20, 2007
7294903 Transistor assemblies Nov. 13, 2007
7291894 Vertical charge control semiconductor device with low output capacitance Nov. 6, 2007

1 2 3 4 5 6 7 8 9 10 11 12 13 14


 
 
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