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Browse by Category: Main > Physics
Class Information
Number: 257/51
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Non-single crystal, or recrystallized, material forms active junction with single crystal material (e.g., monocrystal to polycrystal pn junction or heterojunction)
Description: Subject matter wherein the active junction is formed by both non-single crystal material and single crystal material.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8710500 Bipolar junction transistor with a self-aligned emitter and base Apr. 29, 2014
8659020 Epitaxial silicon wafer and method for manufacturing same Feb. 25, 2014
8653595 Semiconductor device and method of manufacturing the same Feb. 18, 2014
8642402 Thin film transistor manufacturing method, thin film transistor, thin film transistor substrate and image display apparatus, image display apparatus and semiconductor device Feb. 4, 2014
8624321 Thin film transistor including a microcrystalline semiconductor layer and amorphous semiconductor layer and display device including the same Jan. 7, 2014
8598571 Method of manufacturing a compound semiconductor device with compound semiconductor lamination structure Dec. 3, 2013
8546249 Selective growth of polycrystalline silicon-containing semiconductor material on a silicon-containing semiconductor surface Oct. 1, 2013
8530894 Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions Sep. 10, 2013
8426858 Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain Apr. 23, 2013
8420043 Nano-crystal diamond film, manufacturing method thereof, and device using nano-crystal diamond film Apr. 16, 2013
8399888 P-type SiC semiconductor Mar. 19, 2013
8354674 Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer Jan. 15, 2013
8273983 Photonic device and method of making same using nanowires Sep. 25, 2012
8242515 Device containing non-blinking quantum dots Aug. 14, 2012
8242500 Method of manufacturing heterojunction bipolar transistor and heterojunction bipolar transistor Aug. 14, 2012
8198628 Doped substrate to be heated Jun. 12, 2012
8183566 Hetero-crystalline semiconductor device and method of making same May. 22, 2012
8168972 Method for simultaneous recrystallization and doping of semiconductor layers and semiconductor layer systems produced according to this method May. 1, 2012
8164095 Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer Apr. 24, 2012
8164116 Semiconductor device with hetero semiconductor region and method of manufacturing the same Apr. 24, 2012
8120139 Void isolated III-nitride device Feb. 21, 2012
8093590 Photoelectric conversion device Jan. 10, 2012
8080824 Suppressing recombination in an electronic device Dec. 20, 2011
8044465 Method for producing partial SOI structures comprising zones connecting a superficial layer and a substrate Oct. 25, 2011
8039359 Method of forming low capacitance ESD device and structure therefor Oct. 18, 2011
8026517 Semiconductor structures Sep. 27, 2011
8008156 Nitride read only memory device with buried diffusion spacers and method for making the same Aug. 30, 2011
7955934 Nitride read only memory device with buried diffusion spacers and method for making the same Jun. 7, 2011
7935955 Group III nitride semiconductor multilayer structure May. 3, 2011
7919776 High frequency diode and method for producing same Apr. 5, 2011
7915103 Method for fabricating a flat panel display Mar. 29, 2011
7915520 Photoelectric conversion device and manufacturing method thereof Mar. 29, 2011
7915611 Photoelectric conversion device Mar. 29, 2011
7910923 Semiconductor device Mar. 22, 2011
7906778 Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures Mar. 15, 2011
7893434 High frequency diode and method for producing same Feb. 22, 2011
7879263 Method and solution to grow charge-transfer complex salts Feb. 1, 2011
7875884 Hetero-crystalline structure and method of making same Jan. 25, 2011
7858981 Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain Dec. 28, 2010
7851695 Stacked-type photoelectric conversion device Dec. 14, 2010
7842537 Stressed semiconductor using carbon and method for producing the same Nov. 30, 2010
7781774 Thin film transistor array panel Aug. 24, 2010
7777233 Device containing non-blinking quantum dots Aug. 17, 2010
7772486 Photovoltaic device Aug. 10, 2010
7745935 Method to create super secondary grain growth in narrow trenches Jun. 29, 2010
7709305 Method for producing partial SOI structures comprising zones connecting a superficial layer and a substrate May. 4, 2010
7709837 Semiconductor device and its manufacturing method May. 4, 2010
7705426 Integration of a SiGe- or SiGeC-based HBT with a SiGe- or SiGeC-strapped semiconductor device Apr. 27, 2010
7671448 Semiconductor device including two organic semiconductor layers Mar. 2, 2010
7642178 Semiconductor device, method for manufacturing the same and method for evaluating the same Jan. 5, 2010

1 2 3 4 5










 
 
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