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Class Information
Number: 257/508
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer)
Description: Subject matter wherein a metallic (metal or metal-like) conductor is located within the region of electrical insulator material which isolates the components on the chip from each other or is provided between the single crystal semiconductor material of the semiconductor components and the electrical insulator material forming the dielectric isolation.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4900693 |
Process for making polysilicon field plate with improved suppression of parasitic transistors |
Feb. 13, 1990 |
| 4885615 |
Monocrystalline three-dimensional integrated circuit |
Dec. 5, 1989 |
| 4870475 |
Semiconductor device and method of manufacturing the same |
Sep. 26, 1989 |
| 4839309 |
Fabrication of high-speed dielectrically isolated devices utilizing buried silicide outdiffusion |
Jun. 13, 1989 |
| 4819052 |
Merged bipolar/CMOS technology using electrically active trench |
Apr. 4, 1989 |
| 4794445 |
Semiconductor device |
Dec. 27, 1988 |
| 4784970 |
Process for making a double wafer moated signal processor |
Nov. 15, 1988 |
| 4733287 |
Integrated circuit structure with active elements of bipolar transistor formed in slots |
Mar. 22, 1988 |
| 4688069 |
Isolation for high density integrated circuits |
Aug. 18, 1987 |
| 4675982 |
Method of making self-aligned recessed oxide isolation regions |
Jun. 30, 1987 |
| 4586084 |
Solid state image sensor |
Apr. 29, 1986 |
| 4437109 |
Silicon-on-sapphire body with conductive paths therethrough |
Mar. 13, 1984 |
| 4409609 |
Semiconductor device and method of manufacturing the same |
Oct. 11, 1983 |
| 4382827 |
Silicon nitride S/D ion implant mask in CMOS device fabrication |
May. 10, 1983 |
| 4292730 |
Method of fabricating mesa bipolar memory cell utilizing epitaxial deposition, substrate removal and special metallization |
Oct. 6, 1981 |
| 4216491 |
Semiconductor integrated circuit isolated through dielectric material |
Aug. 5, 1980 |
| 4131909 |
Semiconductor integrated circuit isolated through dielectric material and a method for manufacturing the same |
Dec. 26, 1978 |
| 4120744 |
Method of fabricating a thermal display device |
Oct. 17, 1978 |
| 4044452 |
Process for making field effect and bipolar transistors on the same semiconductor chip |
Aug. 30, 1977 |
| 3990093 |
Deep buried layers for semiconductor devices |
Nov. 2, 1976 |
| 3949413 |
Semiconductor diode matrix |
Apr. 6, 1976 |
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