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Class Information
Number: 257/508
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer)
Description: Subject matter wherein a metallic (metal or metal-like) conductor is located within the region of electrical insulator material which isolates the components on the chip from each other or is provided between the single crystal semiconductor material of the semiconductor components and the electrical insulator material forming the dielectric isolation.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5552626 |
Semiconductor device having bipolar transistors with commonly interconnected collector regions |
Sep. 3, 1996 |
| 5530280 |
Process for producing crackstops on semiconductor devices and devices containing the crackstops |
Jun. 25, 1996 |
| 5521419 |
Semiconductor device having field shield element isolating structure and method of manufacturing the same |
May. 28, 1996 |
| 5512775 |
Low dielectric constant insulation in VLSI applications |
Apr. 30, 1996 |
| 5498898 |
Semiconductor device using element isolation by field shield |
Mar. 12, 1996 |
| 5485029 |
On-chip ground plane for semiconductor devices to reduce parasitic signal propagation |
Jan. 16, 1996 |
| 5479044 |
Semiconductor circuit device capable of reducing influence of a parasitic capacitor |
Dec. 26, 1995 |
| 5461248 |
Trench capacitor memory cell and process for formation thereof |
Oct. 24, 1995 |
| 5459346 |
Semiconductor substrate with electrical contact in groove |
Oct. 17, 1995 |
| 5448097 |
Interlayer dielectric film, and semiconductor device and solid-state image pickup device using the same, and method of manufacturing the same |
Sep. 5, 1995 |
| 5446311 |
High-Q inductors in silicon technology without expensive metalization |
Aug. 29, 1995 |
| 5442223 |
Semiconductor device with stress relief |
Aug. 15, 1995 |
| 5436173 |
Method for forming a semiconductor on insulator device |
Jul. 25, 1995 |
| 5424574 |
Light shield for a back-side thinned CCD |
Jun. 13, 1995 |
| 5401682 |
Method of fabricating high voltage junction termination extension structure for a semiconductor integrated circuit device |
Mar. 28, 1995 |
| 5402005 |
Semiconductor device having a multilayered wiring structure |
Mar. 28, 1995 |
| 5400278 |
Semiconductor memory device and method of manufacturing the same |
Mar. 21, 1995 |
| 5399902 |
Semiconductor chip packaging structure including a ground plane |
Mar. 21, 1995 |
| 5386142 |
Semiconductor structures having environmentally isolated elements and method for making the same |
Jan. 31, 1995 |
| 5382829 |
Packaged microwave semiconductor device |
Jan. 17, 1995 |
| 5373180 |
Planar isolation technique for integrated circuits |
Dec. 13, 1994 |
| 5367189 |
Vertical semiconductor device |
Nov. 22, 1994 |
| 5306942 |
Semiconductor device having a shield which is maintained at a reference potential |
Apr. 26, 1994 |
| 5283461 |
Trench conductor and crossunder architecture |
Feb. 1, 1994 |
| 5266832 |
Semiconductor apparatus and method for producing the same |
Nov. 30, 1993 |
| 5262353 |
Process for forming a structure which electrically shields conductors |
Nov. 16, 1993 |
| 5241209 |
Semi-conductor device having circuits on both sides of insulation layer and ultrasonic signal path between the circuits |
Aug. 31, 1993 |
| 5227658 |
Buried air dielectric isolation of silicon islands |
Jul. 13, 1993 |
| 5223733 |
Semiconductor integrated circuit apparatus and method for designing the same |
Jun. 29, 1993 |
| 5216280 |
Semiconductor integrated circuit device having pads at periphery of semiconductor chip |
Jun. 1, 1993 |
| 5208480 |
Dynamic latch circuit |
May. 4, 1993 |
| 5202571 |
Electron emitting device with diamond |
Apr. 13, 1993 |
| 5200639 |
Semiconductor device with isolating groove containing single crystalline aluminum wiring |
Apr. 6, 1993 |
| 5185650 |
High-speed signal transmission line path structure for semiconductor integrated circuit devices |
Feb. 9, 1993 |
| 5151770 |
Shielded semiconductor device |
Sep. 29, 1992 |
| 5128744 |
Semiconductor integrated circuit and method of manufacturing same |
Jul. 7, 1992 |
| 5097310 |
Complementary semiconductor device having improved device isolating region |
Mar. 17, 1992 |
| 5089862 |
Monocrystalline three-dimensional integrated circuit |
Feb. 18, 1992 |
| 5073815 |
Semiconductor substrate and method for producing the same |
Dec. 17, 1991 |
| 5067000 |
Semiconductor device having field shield isolation |
Nov. 19, 1991 |
| 5043778 |
Oxide-isolated source/drain transistor |
Aug. 27, 1991 |
| 4987471 |
High-speed dielectrically isolated devices utilizing buried silicide regions |
Jan. 22, 1991 |
| 4977439 |
Buried multilevel interconnect system |
Dec. 11, 1990 |
| 4963957 |
Semiconductor device having bipolar transistor with trench |
Oct. 16, 1990 |
| 4949162 |
Semiconductor integrated circuit with dummy pedestals |
Aug. 14, 1990 |
| 4949151 |
Bipolar transistor having side wall base and collector contacts |
Aug. 14, 1990 |
| 4939567 |
Trench interconnect for CMOS diffusion regions |
Jul. 3, 1990 |
| 4933733 |
Slot collector transistor |
Jun. 12, 1990 |
| 4924284 |
Method of trench filling |
May. 8, 1990 |
| 4910572 |
Semiconductor device and method of fabricating the same |
Mar. 20, 1990 |
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