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Class Information
Number: 257/508
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means > With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer)
Description: Subject matter wherein a metallic (metal or metal-like) conductor is located within the region of electrical insulator material which isolates the components on the chip from each other or is provided between the single crystal semiconductor material of the semiconductor components and the electrical insulator material forming the dielectric isolation.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6368952 |
Diffusion inhibited dielectric structure for diffusion enhanced conductor layer |
Apr. 9, 2002 |
| 6359338 |
Semiconductor apparatus with self-security function |
Mar. 19, 2002 |
| 6358828 |
Ultra high density series-connected transistors formed on separate elevational levels |
Mar. 19, 2002 |
| 6355950 |
Substrate interconnect for power distribution on integrated circuits |
Mar. 12, 2002 |
| 6348722 |
Semiconductor memory with shield layer |
Feb. 19, 2002 |
| 6323107 |
Process for forming device isolation region |
Nov. 27, 2001 |
| 6320240 |
Semiconductor device and method of manufacturing the same |
Nov. 20, 2001 |
| 6307252 |
On-chip shielding of signals |
Oct. 23, 2001 |
| 6291907 |
Magnetically coupled signal isolator using a faraday shielded MR or GMR receiving element |
Sep. 18, 2001 |
| 6288426 |
Thermal conductivity enhanced semiconductor structures and fabrication processes |
Sep. 11, 2001 |
| 6285066 |
Semiconductor device having field isolation |
Sep. 4, 2001 |
| 6277708 |
Semiconductor structures for suppressing gate oxide plasma charging damage and methods for making the same |
Aug. 21, 2001 |
| 6274919 |
Semiconductor device having a field-shield device isolation structure |
Aug. 14, 2001 |
| 6265753 |
Interconnect dielectric compositions, preparation thereof, and integrated circuit devices fabricated therewith |
Jul. 24, 2001 |
| 6262467 |
Etch barrier structure of a semiconductor device and method for fabricating the same |
Jul. 17, 2001 |
| 6246101 |
Isolation structure and semiconductor device including the isolation structure |
Jun. 12, 2001 |
| 6242796 |
Wiring structure of semiconductor memory device and formation method thereof |
Jun. 5, 2001 |
| 6225675 |
Integrated circuitry, methods of fabricating integrated circuitry, methods of forming local interconnects, and methods of forming conductive lines |
May. 1, 2001 |
| 6218720 |
Semiconductor topography employing a nitrogenated shallow trench isolation structure |
Apr. 17, 2001 |
| 6215152 |
MOSFET having self-aligned gate and buried shield and method of making same |
Apr. 10, 2001 |
| 6201291 |
Semiconductor device and method of manufacturing such a device |
Mar. 13, 2001 |
| 6194276 |
Radiation hardened semiconductor memory |
Feb. 27, 2001 |
| 6166411 |
Heat removal from SOI devices by using metal substrates |
Dec. 26, 2000 |
| 6166403 |
Integrated circuit having embedded memory with electromagnetic shield |
Dec. 26, 2000 |
| 6162740 |
Semiconductor device and method of forming semiconductor device |
Dec. 19, 2000 |
| 6163065 |
Energy-absorbing stable guard ring |
Dec. 19, 2000 |
| 6140188 |
Semiconductor device having load device with trench isolation region and fabrication thereof |
Oct. 31, 2000 |
| 6140706 |
Semiconductor device and method of manufacturing without damaging HSQ layer and metal pattern utilizing multiple dielectric layers |
Oct. 31, 2000 |
| 6133598 |
Semiconductor device with diagonal capacitor bit line and fabrication method thereof |
Oct. 17, 2000 |
| 6127717 |
Totally self-aligned transistor with polysilicon shallow trench isolation |
Oct. 3, 2000 |
| 6118167 |
Polysilicon coated nitride-lined shallow trench |
Sep. 12, 2000 |
| 6114730 |
Semiconductor device and its manufacturing method |
Sep. 5, 2000 |
| 6100573 |
Structure of a bonding pad for semiconductor devices |
Aug. 8, 2000 |
| 6096643 |
Method of fabricating a semiconductor device having polysilicon line with extended silicide layer |
Aug. 1, 2000 |
| 6091630 |
Radiation hardened semiconductor memory |
Jul. 18, 2000 |
| 6084284 |
Integrated circuit including inverted dielectric isolation |
Jul. 4, 2000 |
| 6066885 |
Subtrench conductor formed with large tilt angle implant |
May. 23, 2000 |
| 6060748 |
Semiconductor integrated circuit device using a silicon-on-insulator substrate |
May. 9, 2000 |
| 6057593 |
Hybrid high-power microwave-frequency integrated circuit |
May. 2, 2000 |
| 6054366 |
Two-layered gate structure for a semiconductor device and method for producing the same |
Apr. 25, 2000 |
| 6054780 |
Magnetically coupled signal isolator using a Faraday shielded MR or GMR receiving element |
Apr. 25, 2000 |
| 6051868 |
Semiconductor device |
Apr. 18, 2000 |
| 6045625 |
Buried oxide with a thermal expansion matching layer for SOI |
Apr. 4, 2000 |
| 6046477 |
Dense SOI programmable logic array structure |
Apr. 4, 2000 |
| 6046503 |
Metalization system having an enhanced thermal conductivity |
Apr. 4, 2000 |
| 6015987 |
Semiconductor device having capacitor exhibiting improved mositure resistance and manufacturing method thereof |
Jan. 18, 2000 |
| 6013927 |
Semiconductor structures for suppressing gate oxide plasma charging damage and methods for making the same |
Jan. 11, 2000 |
| 6011297 |
Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage |
Jan. 4, 2000 |
| 5981994 |
Method and semiconductor circuit for maintaining integrity of field threshold voltage requirements |
Nov. 9, 1999 |
| 5973353 |
Methods and arrangements for forming a tapered floating gate in non-volatile memory semiconductor devices |
Oct. 26, 1999 |
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