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Class Information
Number: 257/506
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including dielectric isolation means
Description: Subject matter wherein the means to electrically isolate different devices in the same monolithic chip from each other includes a region of electrical insulator material.


Sub-classes under this class:

Class Number Class Name Patents
257/522 Air isolation (e.g., beam lead supported semiconductor islands) 273
257/509 Combined with pn junction isolation (e.g., isoplanar, locos) 181
257/524 Full dielectric isolation with polycrystalline semiconductor substrate 153
257/523 Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment) 82
257/526 With bipolar transistor structure 127
257/508 With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer) 323
257/507 With single crystal insulating substrate (e.g., sapphire) 112


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Patent Number Title Of Patent Date Issued
4451326 Method for interconnecting metallic layers May. 29, 1984
4435446 Edge seal with polysilicon in LOCOS process Mar. 6, 1984
4432131 Method for manufacturing display device Feb. 21, 1984
4416050 Method of fabrication of dielectrically isolated CMOS devices Nov. 22, 1983
4412378 Method for manufacturing semiconductor device utilizing selective masking, etching and oxidation Nov. 1, 1983
4407696 Fabrication of isolation oxidation for MOS circuit Oct. 4, 1983
4400411 Technique of silicon epitaxial refill Aug. 23, 1983
4397077 Method of fabricating self-aligned MOS devices and independently formed gate dielectrics and insulating layers Aug. 9, 1983
4394181 Methods of manufacturing a semiconductor device having a channel region spaced inside channel stoppers Jul. 19, 1983
4393574 Method for fabricating integrated circuits Jul. 19, 1983
4375643 Application of grown oxide bumper insulators to a high-speed VLSI SASMESFET Mar. 1, 1983
4352236 Double field oxidation process Oct. 5, 1982
4335501 Manufacture of monolithic LED arrays for electroluminescent display devices Jun. 22, 1982
4318759 Retro-etch process for integrated circuits Mar. 9, 1982
4293589 Process for high pressure oxidation of silicon Oct. 6, 1981
4293588 Method of manufacturing a semiconductor device using different etch rates Oct. 6, 1981
4272308 Method of forming recessed isolation oxide layers Jun. 9, 1981
4268952 Method for fabricating self-aligned high resolution non planar devices employing low resolution registration May. 26, 1981
4260431 Method of making Schottky barrier diode by ion implantation and impurity diffusion Apr. 7, 1981
4238762 Electrically isolated semiconductor devices on common crystalline substrate Dec. 9, 1980
4227975 Selective plasma etching of dielectric masks in the presence of native oxides of group III-V compound semiconductors Oct. 14, 1980
4222792 Planar deep oxide isolation process utilizing resin glass and E-beam exposure Sep. 16, 1980
4212024 Solid-state switching circuit employing photon coupling suitable for construction in form of integrated circuit Jul. 8, 1980
4206541 Method of manufacturing thin film thermal print heads Jun. 10, 1980
4199777 Semiconductor device and a method of manufacturing the same Apr. 22, 1980
4172005 Method of etching a semiconductor substrate Oct. 23, 1979
4149301 Monolithic semiconductor integrated circuit-ferroelectric memory drive Apr. 17, 1979
4149302 Monolithic semiconductor integrated circuit ferroelectric memory device Apr. 17, 1979
4148053 Thyristor containing channel stopper Apr. 3, 1979
4141021 Field effect transistor having source and gate electrodes on opposite faces of active layer Feb. 20, 1979
4137108 Process for producing a semiconductor device by vapor growth of single crystal Al.sub.2 O.sub.3 Jan. 30, 1979
4098618 Method of manufacturing semiconductor devices in which oxide regions are formed by an oxidation mask disposed directly on a substrate damaged by ion implantation Jul. 4, 1978
4092445 Process for forming porous semiconductor region using electrolyte without electrical source May. 30, 1978
4079506 Method of preparing a dielectric-isolated substrate for semiconductor integrated circuitries Mar. 21, 1978
4069463 Injection laser array Jan. 17, 1978
4068255 Mesa-type high voltage switching integrated circuit Jan. 10, 1978
4056414 Process for producing an improved dielectrically-isolated silicon crystal utilizing adjacent areas of different insulators Nov. 1, 1977
4045784 Programmable read only memory integrated circuit device Aug. 30, 1977
4045594 Planar insulation of conductive patterns by chemical vapor deposition and sputtering Aug. 30, 1977
4029531 Method of forming grooves in the [011] crystalline direction Jun. 14, 1977
4007103 Planarizing insulative layers by resputtering Feb. 8, 1977
3997381 Method of manufacture of an epitaxial semiconductor layer on an insulating substrate Dec. 14, 1976
3994012 Photovoltaic semi-conductor devices Nov. 23, 1976
3983022 Process for planarizing a surface Sep. 28, 1976
3969168 Method for filling grooves and moats used on semiconductor devices Jul. 13, 1976
3966501 Process of producing semiconductor devices Jun. 29, 1976
3963524 Method of producing a semiconductor device Jun. 15, 1976
3962779 Method for fabricating oxide isolated integrated circuits Jun. 15, 1976
3958040 Semiconductor device manufacture May. 18, 1976
3956034 Isolated photodiode array May. 11, 1976

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