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Class Information
Number: 257/505
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > With polycrystalline semiconductor isolation region in direct contact with single crystal active semiconductor material
Description: Subject matter wherein the means for electrically isolating different devices in the chip from each other includes at least one region of polycrystalline (i.e., made up of many small crystals) semiconductor material, which polycrystalline isolation region is in direct contact with at least one region of single crystal semiconductor material which forms part of an active solid-state device in the chip.


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device Sep. 2, 2008
7420258 Semiconductor device having trench structures and method Sep. 2, 2008
7382015 Semiconductor device including an element isolation portion having a recess Jun. 3, 2008
7291894 Vertical charge control semiconductor device with low output capacitance Nov. 6, 2007
7170109 Heterojunction semiconductor device with element isolation structure Jan. 30, 2007
7112850 Non-volatile memory device with a polarizable layer Sep. 26, 2006
7061069 Semiconductor device having two-layered charge storage electrode Jun. 13, 2006
7038275 Buried-gate-type semiconductor device May. 2, 2006
7034398 Semiconductor device having contact plug and buried conductive film therein Apr. 25, 2006
6943426 Complementary analog bipolar transistors with trench-constrained isolation diffusion Sep. 13, 2005
6885079 Methods and configuration to simplify connections between polysilicon layer and diffusion area Apr. 26, 2005
6878989 Power MOSFET semiconductor device and method of manufacturing the same Apr. 12, 2005
6876054 Integrable DC/AC voltage transformer/isolator and ultra-large-scale circuit incorporating the same Apr. 5, 2005
6861326 Methods of forming semiconductor circuitry Mar. 1, 2005
6815799 Semiconductor integrated circuit device Nov. 9, 2004
6762447 Field-shield-trench isolation for gigabit DRAMs Jul. 13, 2004
6759726 Formation of an isolating wall Jul. 6, 2004
6674145 Flash memory circuitry Jan. 6, 2004
6646319 Semiconductor device having isolating region for suppressing electrical noise Nov. 11, 2003
6611059 Integrated circuitry conductive lines Aug. 26, 2003
6590273 Semiconductor integrated circuit device and manufacturing method thereof Jul. 8, 2003
6583489 Method for forming interconnect structure with low dielectric constant Jun. 24, 2003
6566226 Semiconductor device and fabrication process thereof, method of forming a device isolation structure May. 20, 2003
6555891 SOI hybrid structure with selective epitaxial growth of silicon Apr. 29, 2003
6545337 Semiconductor integrated circuit device Apr. 8, 2003
6504184 Superior silicon carbide integrated circuits and method of fabricating Jan. 7, 2003
6495896 Semiconductor integrated circuit device with high and low voltage wells Dec. 17, 2002
6479850 Method for fabricating an integrated circuit capacitor Nov. 12, 2002
6417555 Semiconductor device and manufacturing method therefor Jul. 9, 2002
6287889 Diamond thin film or the like, method for forming and modifying the thin film, and method for processing the thin film Sep. 11, 2001
6218725 Bipolar transistors with isolation trenches to reduce collector resistance Apr. 17, 2001
6198149 Semiconductor device having novel insulating film structure Mar. 6, 2001
6136648 Nonvolatile semiconductor memory device and a method of fabricating the same Oct. 24, 2000
6127717 Totally self-aligned transistor with polysilicon shallow trench isolation Oct. 3, 2000
6114730 Semiconductor device and its manufacturing method Sep. 5, 2000
6111304 Semiconductor diffused resistor and method for manufacturing the same Aug. 29, 2000
6004406 Silicon on insulating substrate Dec. 21, 1999
5847438 Bonded IC substrate with a high breakdown voltage and large current capabilities Dec. 8, 1998
5841197 Inverted dielectric isolation process Nov. 24, 1998
5753962 Texturized polycrystalline silicon to aid field oxide formation May. 19, 1998
5621239 SOI device having a buried layer of reduced resistivity Apr. 15, 1997
5606186 Semiconductor integrated circuit including opposed substrates of different semiconductor materials and method of manufacturing the semiconductor integrated circuit Feb. 25, 1997
5504708 Flash EEPROM array with P-tank insulated from substrate by deep N-tank Apr. 2, 1996
5449946 Semiconductor device provided with isolation region Sep. 12, 1995
5436495 Device isolation area structure in semiconductor device Jul. 25, 1995
5406113 Bipolar transistor having a buried collector layer Apr. 11, 1995
5382815 Carrier conduction conductor-insulator semiconductor (CIS) transistor Jan. 17, 1995
5367189 Vertical semiconductor device Nov. 22, 1994
RE34400 Method for fabricating isolation region in semiconductor devices Oct. 5, 1993
5233216 Dielectric isolated substrate and process for producing the same Aug. 3, 1993

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