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Class Information
Number: 257/504
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Integrated circuit structure with electrically isolated components > Including means for establishing a depletion region throughout a semiconductor layer for isolating devices in different portions of the layer (e.g., "jfet" isolation)
Description: Subject matter wherein means are provided for producing a region in a layer which is fully depleted of charge carriers and thereby non-conductive as part of the means for electrically isolating different devices in the chip from each other.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7453107 |
Method for applying a stress layer to a semiconductor device and device formed therefrom |
Nov. 18, 2008 |
| 7382015 |
Semiconductor device including an element isolation portion having a recess |
Jun. 3, 2008 |
| 7339249 |
Semiconductor device |
Mar. 4, 2008 |
| 7335952 |
Semiconductor device and manufacturing method therefor |
Feb. 26, 2008 |
| 7291894 |
Vertical charge control semiconductor device with low output capacitance |
Nov. 6, 2007 |
| 7268394 |
JFET structure for integrated circuit and fabrication method |
Sep. 11, 2007 |
| 7221010 |
Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
May. 22, 2007 |
| 7196392 |
Semiconductor structure for isolating integrated circuits of various operation voltages |
Mar. 27, 2007 |
| 7170109 |
Heterojunction semiconductor device with element isolation structure |
Jan. 30, 2007 |
| 7119393 |
Transistor having fully-depleted junctions to reduce capacitance and increase radiation immunity in an integrated circuit |
Oct. 10, 2006 |
| 7112867 |
Resistive isolation between a body and a body contact |
Sep. 26, 2006 |
| 7061069 |
Semiconductor device having two-layered charge storage electrode |
Jun. 13, 2006 |
| 7038260 |
Dual gate structure for a FET and method for fabricating same |
May. 2, 2006 |
| 6936908 |
Forward and reverse blocking devices |
Aug. 30, 2005 |
| 6911687 |
Buried bit line-field isolation defined active semiconductor areas |
Jun. 28, 2005 |
| 6894324 |
Silicon-on-insulator diodes and ESD protection circuits |
May. 17, 2005 |
| 6882024 |
Semiconductor device having a dummy active region for controlling high density plasma chemical vapor deposition |
Apr. 19, 2005 |
| 6847092 |
Microelectronic capacitor structure with radial current flow |
Jan. 25, 2005 |
| 6831346 |
Buried layer substrate isolation in integrated circuits |
Dec. 14, 2004 |
| 6777722 |
Method and structure for double dose gate in a JFET |
Aug. 17, 2004 |
| 6777753 |
CMOS devices hardened against total dose radiation effects |
Aug. 17, 2004 |
| 6633073 |
Method and apparatus for isolating circuits using deep substrate n-well |
Oct. 14, 2003 |
| 6541839 |
Microelectronics structure comprising a low voltage part provided with protection against a high voltage part and method for obtaining said protection |
Apr. 1, 2003 |
| 6479841 |
Power component state detector |
Nov. 12, 2002 |
| 6380606 |
Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same |
Apr. 30, 2002 |
| 6329697 |
Semiconductor device including a charge-dispersing region and fabricating method thereof |
Dec. 11, 2001 |
| 6320217 |
Semiconductor memory device |
Nov. 20, 2001 |
| 6252257 |
Isolating wall between power components |
Jun. 26, 2001 |
| 6110804 |
Method of fabricating a semiconductor device having a floating field conductor |
Aug. 29, 2000 |
| 6097075 |
Semiconductor structure for driver circuits with level shifting |
Aug. 1, 2000 |
| 6037647 |
Semiconductor device having an epitaxial substrate and a fabrication process thereof |
Mar. 14, 2000 |
| 5977606 |
Dielectric isolated high voltage semiconductor device |
Nov. 2, 1999 |
| 5841197 |
Inverted dielectric isolation process |
Nov. 24, 1998 |
| 5828108 |
Semiconductor integrated circuit suppressing noises due to short-circuit/substrate currents |
Oct. 27, 1998 |
| 5729040 |
Semiconductor device having groups of element regions in the semiconductor substrate |
Mar. 17, 1998 |
| 5672899 |
Power semiconductor switch with an integrated circuit |
Sep. 30, 1997 |
| 5569951 |
Precision integrated resistors |
Oct. 29, 1996 |
| 5563437 |
Semiconductor device having a large sense voltage |
Oct. 8, 1996 |
| 5432377 |
Dielectrically isolated semiconductor device and a method for its manufacture |
Jul. 11, 1995 |
| 5245212 |
Self-aligned field-plate isolation between active elements |
Sep. 14, 1993 |
| 5243219 |
Semiconductor device having impurity diffusion region formed in substrate beneath interlayer contact hole |
Sep. 7, 1993 |
| 4947222 |
Electrically programmable and erasable memory cells with field plate conductor defined drain regions |
Aug. 7, 1990 |
| 4903109 |
Semiconductor devices having local oxide isolation |
Feb. 20, 1990 |
| 4419684 |
Semiconductor integrated circuit |
Dec. 6, 1983 |
| 4417325 |
Highly scaleable dynamic ram cell with self-signal amplification |
Nov. 22, 1983 |
| 4404048 |
Semiconductor device manufacture |
Sep. 13, 1983 |
| 4309626 |
Diffused resistor |
Jan. 5, 1982 |
| 4035829 |
Semiconductor device and method of electrically isolating circuit components thereon |
Jul. 12, 1977 |
| 3961357 |
Semiconductor integrated circuit device |
Jun. 1, 1976 |
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