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Class Information
Number: 257/50
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) > Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element)
Description: Subject matter wherein the active junction is structured or arranged to form an electrical short circuit between the electrical terminals of the active device.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
6097077 Programmable interconnect structures and programmable integrated circuits Aug. 1, 2000
6093934 Thin film transistor having grain boundaries with segregated oxygen and halogen elements Jul. 25, 2000
6087677 High density self-aligned antifuse Jul. 11, 2000
6084247 Semiconductor device having a catalyst enhanced crystallized layer Jul. 4, 2000
6072193 Thin-film transistor and semiconductor device using thin-film transistors Jun. 6, 2000
6057557 Semiconductor substrate semiconductor device and liquid crystal display device May. 2, 2000
6016001 Metal to amorphous silicon to metal anti-fuse structure Jan. 18, 2000
5994757 Electronic circuit device capable for use as a memory device Nov. 30, 1999
5986322 Reduced leakage antifuse structure Nov. 16, 1999
5965270 Metal/amorphous material/metal antifuse structure with a barrier enhancement layer Oct. 12, 1999
5962910 Metal-to-metal via-type antifuse Oct. 5, 1999
5962911 Semiconductor devices having amorphous silicon antifuse structures Oct. 5, 1999
5959313 Thin film semiconductor having a monocrystalline region containing carbon, nitrogen and oxygen and crystallization promotor metal component Sep. 28, 1999
5955751 Programmable device having antifuses without programmable material edges and/or corners underneath metal Sep. 21, 1999
5937281 Method to form metal-to-metal antifuse for field programmable gate array applications using liquid phase deposition (LPD) Aug. 10, 1999
5936297 Programmable semiconductor element having an antifuse structure Aug. 10, 1999
5930646 Method of shallow trench isolation Jul. 27, 1999
5920109 Raised tungsten plug antifuse and fabrication processes Jul. 6, 1999
5913137 Process ESD protection devices for use with antifuses Jun. 15, 1999
5903042 Self-aligned antifuse with base May. 11, 1999
5903041 Integrated two-terminal fuse-antifuse and fuse and integrated two-terminal fuse-antifuse structures incorporating an air gap May. 11, 1999
5886392 One-time programmable element having controlled programmed state resistance Mar. 23, 1999
5883398 Device having a switch comprising a chromium layer and method for depositing chromium layers by sputtering Mar. 16, 1999
5880512 Programmable interconnect structures and programmable integrated circuits Mar. 9, 1999
5866937 Double half via antifuse Feb. 2, 1999
5844298 Method and apparatus for programming anti-fuses Dec. 1, 1998
5825072 Circuits for ESD Protection of metal to-metal antifuses during processing Oct. 20, 1998
5821558 Antifuse structures Oct. 13, 1998
5811870 Antifuse structure Sep. 22, 1998
5807786 Method of making a barrier layer to protect programmable antifuse structure from damage during fabrication sequence Sep. 15, 1998
5801399 Semiconductor device with antireflection film Sep. 1, 1998
5793094 Methods for fabricating anti-fuse structures Aug. 11, 1998
5789794 Fuse structure for an integrated circuit element Aug. 4, 1998
5789796 Programmable anti-fuse device and method for manufacturing the same Aug. 4, 1998
5780919 Electrically programmable interconnect structure having a PECVD amorphous silicon element Jul. 14, 1998
RE35828 Anti-fuse circuit and method wherein the read operation and programming operation are reversed Jun. 23, 1998
5770885 Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers Jun. 23, 1998
5768179 Antifuse load sram cell Jun. 16, 1998
5763898 Above via metal-to-metal antifuses incorporating a tungsten via plug Jun. 9, 1998
5751016 Device having a switch comprising a chromium layer May. 12, 1998
5741720 Method of programming an improved metal-to-metal via-type antifuse Apr. 21, 1998
5726484 Multilayer amorphous silicon antifuse Mar. 10, 1998
5717230 Field programmable gate array having reproducible metal-to-metal amorphous silicon antifuses Feb. 10, 1998
5705849 Antifuse structure and method for manufacturing it Jan. 6, 1998
5701027 Programmable interconnect structures and programmable integrated circuits Dec. 23, 1997
5693556 Method of making an antifuse metal post structure Dec. 2, 1997
5682058 Multilayer antifuse with low leakage and method of manufacture therefor Oct. 28, 1997
5682049 Method and apparatus for trimming an electrical value of a component of an integrated circuit Oct. 28, 1997
5679974 Antifuse element and semiconductor device having antifuse elements Oct. 21, 1997
5670818 Electrically programmable antifuse Sep. 23, 1997

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