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Browse by Category: Main > Physics
Class Information
Number: 257/5
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bulk effect device > Bulk effect switching in amorphous material > In array
Description: Subject matter in which the amorphous bulk effect switch has a group of individual switch elements with a predetermined (often regular) spacing extended in one or more directions.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8709834 Methods of fabricating semiconductor device Apr. 29, 2014
8710480 Phase-change memory device having multiple diodes Apr. 29, 2014
8710485 Semiconductor device and method of manufacturing the same Apr. 29, 2014
8704203 Transition metal oxide bilayers Apr. 22, 2014
8704206 Memory device including transistor array with shared plate channel and method for making the same Apr. 22, 2014
8692225 Resistive memory device and fabrication method thereof Apr. 8, 2014
8686386 Nonvolatile memory device using a varistor as a current limiter element Apr. 1, 2014
8686394 Semiconductor constructions and memory arrays Apr. 1, 2014
8686393 Integrated circuit semiconductor devices including channel trenches and related methods of manufacturing Apr. 1, 2014
8686392 Semiconductor device Apr. 1, 2014
8686389 Diffusion barrier layer for resistive random access memory cells Apr. 1, 2014
8685786 Method of manufacturing a semiconductor memory device having a resistance change memory layer Apr. 1, 2014
8686385 Phase-change random access memory device and method of manufacturing the same Apr. 1, 2014
8680499 Memory cells Mar. 25, 2014
8680504 Diamond type quad-resistor cells of PRAM Mar. 25, 2014
8680505 Semiconductor memory device Mar. 25, 2014
8674522 Castle-like chop mask for forming staggered datalines for improved contact isolation and pattern thereof Mar. 18, 2014
8674334 Memory elements using self-aligned phase change material layers and methods of manufacturing same Mar. 18, 2014
8673692 Charging controlled RRAM device, and methods of making same Mar. 18, 2014
8669144 Methods of forming memory arrays Mar. 11, 2014
8664633 Non-volatile memory devices having resistance changeable elements and related systems and methods Mar. 4, 2014
8664634 Protruding post resistive memory devices Mar. 4, 2014
8659510 Spatial light modulator Feb. 25, 2014
8659003 Disturb-resistant non-volatile memory device and method Feb. 25, 2014
8658999 Semiconductor device Feb. 25, 2014
8658510 Processing phase change material to improve programming speed Feb. 25, 2014
8658476 Low temperature P+ polycrystalline silicon material for non-volatile memory device Feb. 25, 2014
8653493 Variable resistance memory devices and methods of manufacturing the same Feb. 18, 2014
8653496 Memory cells Feb. 18, 2014
8653497 Resistive memory Feb. 18, 2014
8648327 Stackable non-volatile resistive switching memory devices Feb. 11, 2014
8642985 Memory Cell Feb. 4, 2014
8642988 Non-volatile memory device Feb. 4, 2014
8642990 Diamond type quad-resistor cells of PRAM Feb. 4, 2014
8637847 Memory cells having a plurality of heaters Jan. 28, 2014
8637845 Optimized electrodes for Re-RAM Jan. 28, 2014
8633566 Memory cell repair Jan. 21, 2014
8634236 Phase change memory device, storage system having the same and fabricating method thereof Jan. 21, 2014
8629421 Memory cells Jan. 14, 2014
8624217 Planar phase-change memory cell with parallel electrical paths Jan. 7, 2014
8623697 Avoiding degradation of chalcogenide material during definition of multilayer stack structure Jan. 7, 2014
8618527 Memory element and memory device Dec. 31, 2013
8614117 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor Dec. 24, 2013
8614432 Crystalline silicon-based memristive device with multiple mobile dopant species Dec. 24, 2013
8610102 Nonvolatile memory device and manufacturing method thereof Dec. 17, 2013
8610099 Planar resistive memory integration Dec. 17, 2013
8610098 Phase change memory bridge cell with diode isolation device Dec. 17, 2013
8610101 Nonvolatile variable resistance element having a variable resistive layer disposed between first and second electrodes Dec. 17, 2013
8598561 Nonvolatile memory device and method for manufacturing same Dec. 3, 2013
8592798 Non-volatile storage device and method for manufacturing the same Nov. 26, 2013

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