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Class Information
Number: 257/5
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bulk effect device > Bulk effect switching in amorphous material > In array
Description: Subject matter in which the amorphous bulk effect switch has a group of individual switch elements with a predetermined (often regular) spacing extended in one or more directions.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7459759 |
Magnetic random access memory |
Dec. 2, 2008 |
| 7459716 |
Resistance change memory device |
Dec. 2, 2008 |
| 7459717 |
Phase change memory cell and manufacturing method |
Dec. 2, 2008 |
| 7459715 |
Resistance change memory device |
Dec. 2, 2008 |
| 7456421 |
Vertical side wall active pin structures in a phase change memory and manufacturing methods |
Nov. 25, 2008 |
| 7453082 |
Small electrode for a chalcogenide switching device and method for fabricating same |
Nov. 18, 2008 |
| 7449711 |
Phase-change-type semiconductor memory device |
Nov. 11, 2008 |
| 7449710 |
Vacuum jacket for phase change memory element |
Nov. 11, 2008 |
| 7443711 |
Non-volatile programmable impedance nanoscale devices |
Oct. 28, 2008 |
| 7427770 |
Memory array for increased bit density |
Sep. 23, 2008 |
| 7423327 |
Spin transistor based on the spin-filter effect and a non-volatile memory using spin transistors |
Sep. 9, 2008 |
| 7423281 |
Microelectronic device with a plurality of storage elements in serial connection and method of producing the same |
Sep. 9, 2008 |
| 7420199 |
Resistivity changing memory cell having nanowire electrode |
Sep. 2, 2008 |
| 7414258 |
Spacer electrode small pin phase change memory RAM and manufacturing method |
Aug. 19, 2008 |
| 7402847 |
Programmable logic circuit and method of using same |
Jul. 22, 2008 |
| 7402829 |
Structured silicon anode |
Jul. 22, 2008 |
| 7397060 |
Pipe shaped phase change memory |
Jul. 8, 2008 |
| 7393798 |
Resistance variable memory with temperature tolerant materials |
Jul. 1, 2008 |
| 7394087 |
Phase-changeable memory devices and methods of forming the same |
Jul. 1, 2008 |
| 7394088 |
Thermally contained/insulated phase change memory device and method (combined) |
Jul. 1, 2008 |
| 7391045 |
Three-dimensional phase-change memory |
Jun. 24, 2008 |
| 7385218 |
Phase changeable layers including protruding portions in electrodes thereof and methods of forming same |
Jun. 10, 2008 |
| 7375365 |
Multilevel phase-change memory, manufacture method and operating method thereof |
May. 20, 2008 |
| 7374174 |
Small electrode for resistance variable devices |
May. 20, 2008 |
| 7365411 |
Resistance variable memory with temperature tolerant materials |
Apr. 29, 2008 |
| 7361925 |
Integrated circuit having a memory including a low-k dielectric material for thermal isolation |
Apr. 22, 2008 |
| 7358520 |
Semiconductor memory cell, method for fabricating it and semiconductor memory device |
Apr. 15, 2008 |
| 7351992 |
Forming nonvolatile phase change memory cell having a reduced thermal contact area |
Apr. 1, 2008 |
| 7348590 |
Phase change memory cell with high read margin at low power operation |
Mar. 25, 2008 |
| 7339185 |
Phase change memory device and method for forming the same |
Mar. 4, 2008 |
| 7335906 |
Phase change memory device |
Feb. 26, 2008 |
| 7332735 |
Phase change memory cell and method of formation |
Feb. 19, 2008 |
| 7330369 |
NANO-electronic memory array |
Feb. 12, 2008 |
| 7323708 |
Phase change memory devices having phase change area in porous dielectric layer |
Jan. 29, 2008 |
| 7317200 |
SnSe-based limited reprogrammable cell |
Jan. 8, 2008 |
| 7307268 |
Structure and method for biasing phase change memory array for reliable writing |
Dec. 11, 2007 |
| 7307269 |
Phase-change RAM containing AIN thermal dissipation layer and TiN electrode |
Dec. 11, 2007 |
| 7294856 |
Electro-optical device and electronic apparatus |
Nov. 13, 2007 |
| 7291857 |
Non-volatile memory |
Nov. 6, 2007 |
| 7288781 |
Programmable structure, an array including the structure, and methods of forming the same |
Oct. 30, 2007 |
| 7271403 |
Isolating phase change memory devices |
Sep. 18, 2007 |
| 7262427 |
Structure for phase change memory and the method of forming same |
Aug. 28, 2007 |
| 7244956 |
Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured |
Jul. 17, 2007 |
| 7238959 |
Phase change memory device employing thermally insulating voids and sloped trench, and a method of making same |
Jul. 3, 2007 |
| 7233054 |
Phase change material and non-volatile memory device using the same |
Jun. 19, 2007 |
| 7233017 |
Multibit phase change memory device and method of driving the same |
Jun. 19, 2007 |
| 7227170 |
Multiple bit chalcogenide storage device |
Jun. 5, 2007 |
| 7227169 |
Programmable surface control devices and method of making same |
Jun. 5, 2007 |
| 7217945 |
Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby |
May. 15, 2007 |
| 7214632 |
Using selective deposition to form phase-change memory cells |
May. 8, 2007 |
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