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Class Information
Number: 257/498
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Punchthrough structure device (e.g., punchthrough transistor, camel barrier diode) > Punchthrough region fully depleted at zero external applied bias voltage (e.g., camel barrier or planar doped barrier devices, or so-called "bipolar sit" devices)
Description: Subject matter wherein the active junction and the second junction are sufficiently closely spaced that the depletion region from the active junction due to the built-in potential of the active junction reaches the second junction even in the absence of a reverse bias voltage across the active junction.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6949423 |
MOSFET-fused nonvolatile read-only memory cell (MOFROM) |
Sep. 27, 2005 |
| 6858869 |
White color light emitting device |
Feb. 22, 2005 |
| 6833594 |
Semiconductor integrated circuit device and manufacture method therefore |
Dec. 21, 2004 |
| 6693339 |
Semiconductor component and method of manufacturing same |
Feb. 17, 2004 |
| 6597052 |
Punch-through diode having an inverted structure |
Jul. 22, 2003 |
| 6590281 |
Crack-preventive semiconductor package |
Jul. 8, 2003 |
| 6459133 |
Enhanced flux semiconductor device with mesa and method of manufacturing same |
Oct. 1, 2002 |
| 6388302 |
Ground compatible inhibit circuit |
May. 14, 2002 |
| 6262466 |
Lateral semiconductor structure for forming a temperature-compensated voltage limitation |
Jul. 17, 2001 |
| 6188110 |
Integration of isolation with epitaxial growth regions for enhanced device formation |
Feb. 13, 2001 |
| 5986304 |
Punch-through prevention in trenched DMOS with poly-silicon layer covering trench corners |
Nov. 16, 1999 |
| 5977602 |
Semiconductor device having an oxygen-rich punchthrough region extending through the length of the active region |
Nov. 2, 1999 |
| 5675157 |
Transferred electron effect device |
Oct. 7, 1997 |
| 5610432 |
Semiconductor device with a fast lateral dmost provided with a high-voltage source electrode |
Mar. 11, 1997 |
| 5485017 |
Semiconductor device and method of manufacturing same |
Jan. 16, 1996 |
| 5418376 |
Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure |
May. 23, 1995 |
| 5406111 |
Protection device for an intergrated circuit and method of formation |
Apr. 11, 1995 |
| 5391897 |
Status induction semiconductor device |
Feb. 21, 1995 |
| 5331194 |
Bipolar static induction transistor |
Jul. 19, 1994 |
| 5329151 |
Semiconductor diode |
Jul. 12, 1994 |
| 5323028 |
MOS composite static induction thyristor |
Jun. 21, 1994 |
| 5250815 |
Hot electron injector Gunn device with anode heat sink |
Oct. 5, 1993 |
| 5233214 |
Controllable, temperature-compensated voltage limiter |
Aug. 3, 1993 |
| 4994870 |
Static induction type semiconductor device |
Feb. 19, 1991 |
| 4937640 |
Short channel MOSFET |
Jun. 26, 1990 |
| 4922314 |
Hot charge-carrier transistors |
May. 1, 1990 |
| 4903088 |
Semiconductor laser with large bandgap connection layer |
Feb. 20, 1990 |
| 4862238 |
Transistors |
Aug. 29, 1989 |
| 4814838 |
Semiconductor device and method of manufacturing the same |
Mar. 21, 1989 |
| 4807011 |
Semiconductor integrated circuit incorporating SITS |
Feb. 21, 1989 |
| 4738935 |
Method of manufacturing compound semiconductor apparatus |
Apr. 19, 1988 |
| 4525731 |
Semiconductor conversion of optical-to-electrical energy |
Jun. 25, 1985 |
| 4504846 |
Multiwavelength optical-to-electrical logic operations |
Mar. 12, 1985 |
| 4486766 |
Schottky barrier field effect transistors |
Dec. 4, 1984 |
| 4466180 |
Method of manufacturing punch through voltage regulator diodes utilizing shaping and selective doping |
Aug. 21, 1984 |
| 4410902 |
Planar doped barrier semiconductor device |
Oct. 18, 1983 |
| 4390888 |
X-y Infrared CCD sensor and method for making same |
Jun. 28, 1983 |
| 4284997 |
Static induction transistor and its applied devices |
Aug. 18, 1981 |
| 4278986 |
Semiconductor diode |
Jul. 14, 1981 |
| 4167748 |
High voltage monolithic transistor circuit |
Sep. 11, 1979 |
| 4149174 |
Majority charge carrier bipolar diode with fully depleted barrier region at zero bias |
Apr. 10, 1979 |
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