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Class Information
Number: 257/497
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Punchthrough structure device (e.g., punchthrough transistor, camel barrier diode)
Description: Subject matter having at least one active pn, Schottky barrier, or other rectifying junction which can be reverse biased to produce a depletion layer, the active junction being spaced from a second junction by a layer of semiconductor material in which the depletion region extending from the active junction is produced, the second junction being one capable of supplying minority carriers to the layer of semiconductor material upon forward bias of the second junction, and in which the second junction is located sufficiently close to the active junction that the depletion region from the active junction can reach the second junction, thereby forward biasing the second junction and causing the injection of minority carriers therefrom which traverse the depletion layer and reach the active junction.

Sub-classes under this class:

Class Number Class Name Patents
257/498 Punchthrough region fully depleted at zero external applied bias voltage (e.g., camel barrier or planar doped barrier devices, or so-called "bipolar sit" devices) 49

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8575715 Punch-through diode steering element Nov. 5, 2013
8557654 Punch-through diode Oct. 15, 2013
8546779 Resistance change memory and manufacturing method thereof Oct. 1, 2013
8508016 Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device Aug. 13, 2013
8461563 Resistance change memory Jun. 11, 2013
8399953 Semiconductor device and method for manufacturing the same Mar. 19, 2013
8274130 Punch-through diode steering element Sep. 25, 2012
8212327 High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme Jul. 3, 2012
7928315 Terminal box for a solar cell panel Apr. 19, 2011
7728404 Punchthrough diode and method of manufacturing thereof Jun. 1, 2010
7592241 Semiconductor device having well with peak impurity concentrations and method for fabricating the same Sep. 22, 2009
7589377 Gate structure with low resistance for high power semiconductor devices Sep. 15, 2009
7482669 Semiconductor device and method of manufacturing such a device Jan. 27, 2009
7164183 Semiconductor substrate, semiconductor device, and method of manufacturing the same Jan. 16, 2007
7138699 Semiconductor integrated circuit and noncontact information medium Nov. 21, 2006
7126191 Double-diffused semiconductor device Oct. 24, 2006
6963094 Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking regio Nov. 8, 2005
6949439 Semiconductor power component and a method of producing same Sep. 27, 2005
6949423 MOSFET-fused nonvolatile read-only memory cell (MOFROM) Sep. 27, 2005
6919625 Surface mount multichip devices Jul. 19, 2005
6897095 Semiconductor process and integrated circuit having dual metal oxide gate dielectric with single metal gate electrode May. 24, 2005
6833594 Semiconductor integrated circuit device and manufacture method therefore Dec. 21, 2004
RE38608 Low-voltage punch-through transient suppressor employing a dual-base structure Oct. 5, 2004
6791411 Power amplifier and a method for operating a power amplifier Sep. 14, 2004
6602769 Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same Aug. 5, 2003
6600204 Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same Jul. 29, 2003
6597052 Punch-through diode having an inverted structure Jul. 22, 2003
6534834 Polysilicon bounded snapback device Mar. 18, 2003
6528858 MOSFETs with differing gate dielectrics and method of formation Mar. 4, 2003
6489660 Low-voltage punch-through bi-directional transient-voltage suppression devices Dec. 3, 2002
6459133 Enhanced flux semiconductor device with mesa and method of manufacturing same Oct. 1, 2002
6388319 Three commonly housed diverse semiconductor dice May. 14, 2002
6388302 Ground compatible inhibit circuit May. 14, 2002
6369440 Semiconductor substrate and manufacturing method thereof Apr. 9, 2002
6344658 Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same Feb. 5, 2002
6300656 Nonvolatile semiconductor memory device having a drain region of different impurity density and conductivity types Oct. 9, 2001
6297552 Commonly housed diverse semiconductor die Oct. 2, 2001
6262466 Lateral semiconductor structure for forming a temperature-compensated voltage limitation Jul. 17, 2001
6200841 MOS transistor that inhibits punchthrough and method for fabricating the same Mar. 13, 2001
6188110 Integration of isolation with epitaxial growth regions for enhanced device formation Feb. 13, 2001
6172402 Integrated circuit having transistors that include insulative punchthrough regions and method of formation Jan. 9, 2001
6015999 Low-voltage punch-through transient suppressor employing a dual-base structure Jan. 18, 2000
5994760 Device having a low threshold voltage for protection against electrostatic discharges Nov. 30, 1999
5986304 Punch-through prevention in trenched DMOS with poly-silicon layer covering trench corners Nov. 16, 1999
5977602 Semiconductor device having an oxygen-rich punchthrough region extending through the length of the active region Nov. 2, 1999
5936265 Semiconductor device including a tunnel effect element Aug. 10, 1999
5929503 Punch-through diodes and applications Jul. 27, 1999
5929502 Level shifter stage with punch through diode Jul. 27, 1999
5880511 Low-voltage punch-through transient suppressor employing a dual-base structure Mar. 9, 1999
5841172 SOI input protection circuit Nov. 24, 1998

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