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Class Information
Number: 257/496
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > With physical configuration of semiconductor surface to reduce electric field (e.g., reverse bevels, double bevels, stepped mesas, etc.)
Description: Subject matter wherein the means to increase breakdown voltage includes a semiconductor surface portion having a physical configuration, such as a bevel or mesa, to reduce electric field strength at a given applied voltage. Typically, the physical configuration will be such that the depletion region from a reverse biased junction in the active device reaches the physically configured surface and is forced by the shape of the surface to spread wider at a given applied reverse voltage than it would otherwise, thus reducing the electric field strength in the depletion layer.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7439595 |
Field effect transistor having vertical channel structure |
Oct. 21, 2008 |
| 7391094 |
Semiconductor structure and method of making same |
Jun. 24, 2008 |
| 7361945 |
Semiconductor device |
Apr. 22, 2008 |
| 7348256 |
Methods of forming reduced electric field DMOS using self-aligned trench isolation |
Mar. 25, 2008 |
| 7335944 |
High-voltage vertical transistor with a multi-gradient drain doping profile |
Feb. 26, 2008 |
| 7304363 |
Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device |
Dec. 4, 2007 |
| 7279757 |
Double-sided extended drain field effect transistor |
Oct. 9, 2007 |
| 7268339 |
Large area semiconductor detector with internal gain |
Sep. 11, 2007 |
| 7211861 |
Insulated gate semiconductor device |
May. 1, 2007 |
| 7180152 |
Process for resurf diffusion for high voltage MOSFET |
Feb. 20, 2007 |
| 7170133 |
Transistor and method of fabricating the same |
Jan. 30, 2007 |
| 7145214 |
Substrate for stressed systems and method of making same |
Dec. 5, 2006 |
| 7141856 |
Multi-structured Si-fin |
Nov. 28, 2006 |
| 7118942 |
Method of making atomic integrated circuit device |
Oct. 10, 2006 |
| 7105927 |
Structure of dummy pattern in semiconductor device |
Sep. 12, 2006 |
| 7102201 |
Strained semiconductor device structures |
Sep. 5, 2006 |
| 7084044 |
Optoelectronic device and method of manufacture thereof |
Aug. 1, 2006 |
| 7009270 |
Substrate for stressed systems and method of making same |
Mar. 7, 2006 |
| 6972477 |
Circuit device with conductive patterns separated by insulating resin-filled grooves |
Dec. 6, 2005 |
| 6919598 |
LDMOS transistor with enhanced termination region for high breakdown voltage with low on-resistance |
Jul. 19, 2005 |
| 6900523 |
Termination structure for MOSgated power devices |
May. 31, 2005 |
| 6885084 |
Semiconductor transistor having a stressed channel |
Apr. 26, 2005 |
| 6855986 |
Termination structure for trench DMOS device and method of making the same |
Feb. 15, 2005 |
| 6818945 |
Semiconductor device |
Nov. 16, 2004 |
| 6744112 |
Multiple chip guard rings for integrated circuit and chip guard ring interconnect |
Jun. 1, 2004 |
| 6740952 |
High withstand voltage semiconductor device |
May. 25, 2004 |
| 6696705 |
Power semiconductor component having a mesa edge termination |
Feb. 24, 2004 |
| 6693340 |
Lateral semiconductor device |
Feb. 17, 2004 |
| 6683363 |
Trench structure for semiconductor devices |
Jan. 27, 2004 |
| 6670694 |
Semiconductor device |
Dec. 30, 2003 |
| 6646304 |
Universal semiconductor wafer for high-voltage semiconductor components |
Nov. 11, 2003 |
| 6617652 |
High breakdown voltage semiconductor device |
Sep. 9, 2003 |
| 6600213 |
Semiconductor structure and package including a chip having chamfered edges |
Jul. 29, 2003 |
| 6583487 |
Power component bearing interconnections |
Jun. 24, 2003 |
| 6525389 |
High voltage termination with amorphous silicon layer below the field plate |
Feb. 25, 2003 |
| 6492691 |
High integration density MOS technology power device structure |
Dec. 10, 2002 |
| 6489666 |
Semiconductor device with improved heat suppression in peripheral regions |
Dec. 3, 2002 |
| 6486524 |
Ultra low Irr fast recovery diode |
Nov. 26, 2002 |
| 6483135 |
Field effect transistor |
Nov. 19, 2002 |
| 6476458 |
Semiconductor device capable of enhancing a withstand voltage at a peripheral region around an element in comparison with a withstand voltage at the element |
Nov. 5, 2002 |
| 6424010 |
Method of manufacturing a semiconductor device having reduced power consumption without a reduction in the source/drain breakdown voltage |
Jul. 23, 2002 |
| 6373110 |
Semiconductor device having high breakdown voltage |
Apr. 16, 2002 |
| 6362064 |
Elimination of walkout in high voltage trench isolated devices |
Mar. 26, 2002 |
| 6359308 |
Cellular trench-gate field-effect transistors |
Mar. 19, 2002 |
| 6355960 |
ESD protection for open drain I/O pad in integrated circuit with parasitic field FET devices |
Mar. 12, 2002 |
| 6323530 |
Optical semiconductor device |
Nov. 27, 2001 |
| 6309929 |
Method of forming trench MOS device and termination structure |
Oct. 30, 2001 |
| 6140681 |
Electrostatic discharge protection circuit |
Oct. 31, 2000 |
| 6100549 |
High breakdown voltage resurf HFET |
Aug. 8, 2000 |
| 6091108 |
Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage |
Jul. 18, 2000 |
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