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Browse by Category: Main > Physics
Class Information
Number: 257/496
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > With physical configuration of semiconductor surface to reduce electric field (e.g., reverse bevels, double bevels, stepped mesas, etc.)
Description: Subject matter wherein the means to increase breakdown voltage includes a semiconductor surface portion having a physical configuration, such as a bevel or mesa, to reduce electric field strength at a given applied voltage. Typically, the physical configuration will be such that the depletion region from a reverse biased junction in the active device reaches the physically configured surface and is forced by the shape of the surface to spread wider at a given applied reverse voltage than it would otherwise, thus reducing the electric field strength in the depletion layer.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8710617 Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation region Apr. 29, 2014
8648445 Metal-oxide-semiconductor device having trenched diffusion region and method of forming same Feb. 11, 2014
8564088 Semiconductor device having variably laterally doped zone with decreasing concentration formed in an edge region Oct. 22, 2013
8536623 High electron mobility transistor and method of manufacturing the same Sep. 17, 2013
8497552 Semiconductor devices with current shifting regions and related methods Jul. 30, 2013
8487372 Trench MOSFET layout with trenched floating gates and trenched channel stop gates in termination Jul. 16, 2013
8482032 Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer Jul. 9, 2013
8431460 Method for fabricating semiconductor device Apr. 30, 2013
8426945 Semiconductor device, method for manufacturing semiconductor device, and electronic appliance Apr. 23, 2013
8390030 Nitride semiconductor device Mar. 5, 2013
8350366 Power semiconductor element with two-stage impurity concentration profile Jan. 8, 2013
8314471 Trench devices having improved breakdown voltages and method for manufacturing same Nov. 20, 2012
8283749 Bipolar junction transistor guard ring structures and method of fabricating thereof Oct. 9, 2012
8212323 Seal ring structure for integrated circuits Jul. 3, 2012
8183669 Nitride semiconductor wafer having a chamfered edge May. 22, 2012
8143679 Termination structure for power devices Mar. 27, 2012
8120059 Nitride semiconductor substrate and method of fabricating the same Feb. 21, 2012
8105911 Bipolar junction transistor guard ring structures and method of fabricating thereof Jan. 31, 2012
8097919 Mesa termination structures for power semiconductor devices including mesa step buffers Jan. 17, 2012
8093676 Semiconductor component including an edge termination having a trench and method for producing Jan. 10, 2012
8080858 Semiconductor component having a space saving edge structure Dec. 20, 2011
8063467 Semiconductor structure and method of manufacture Nov. 22, 2011
7999343 Semiconductor component with a space-saving edge termination, and method for production of such component Aug. 16, 2011
7999347 Semiconductor device Aug. 16, 2011
7982296 Methods and devices for fabricating and assembling printable semiconductor elements Jul. 19, 2011
7928347 Heating unit and method of making the same Apr. 19, 2011
7923767 Non-volatile storage with substrate cut-out and process of fabricating Apr. 12, 2011
7915705 SiC semiconductor device having outer periphery structure Mar. 29, 2011
7902637 Nano structure and method of manufacturing nano structure Mar. 8, 2011
7880260 Semiconductor device with a semiconductor body and method for its production Feb. 1, 2011
7872297 Flash memory device and fabricating method thereof comprising a body recess region Jan. 18, 2011
7872331 Nitride semiconductor wafer Jan. 18, 2011
7825017 Method of making silicon carbide semiconductor device having multi-layered passivation film with uneven surfaces Nov. 2, 2010
7800196 Semiconductor structure with an electric field stop layer for improved edge termination capability Sep. 21, 2010
7791176 Power semiconductor component with trench-type second contact region Sep. 7, 2010
7759769 Semiconductor structure of a high side driver Jul. 20, 2010
7714407 Semiconductor device and method of forming a semiconductor device May. 11, 2010
7652307 Semiconductor device with two overlapping diffusion layers held at floating voltage for improving withstand voltage Jan. 26, 2010
7635892 Semiconductor device Dec. 22, 2009
7598586 Semiconductor device and production method therefor Oct. 6, 2009
7589393 Semiconductor structure of a high side driver for two high voltage nodes with partially linked deep wells and method for manufacturing the same Sep. 15, 2009
7560787 Trench field plate termination for power devices Jul. 14, 2009
7538407 Semiconductor apparatus May. 26, 2009
7511319 Methods and apparatus for a stepped-drift MOSFET Mar. 31, 2009
7439595 Field effect transistor having vertical channel structure Oct. 21, 2008
7391094 Semiconductor structure and method of making same Jun. 24, 2008
7361945 Semiconductor device Apr. 22, 2008
7348256 Methods of forming reduced electric field DMOS using self-aligned trench isolation Mar. 25, 2008
7335944 High-voltage vertical transistor with a multi-gradient drain doping profile Feb. 26, 2008
7304363 Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device Dec. 4, 2007

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