| |
 |
|
Class Information
Number: 257/495
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > Floating pn junction guard region
Description: Subject matter wherein the means for increasing breakdown voltage in the device includes a floating pn junction guard region, that is, a region, free of direct electrical connection, located in the material forming one side of an active pn or other rectifying semiconductor junction, which region forms a pn junction with the material of the one side of the active junction, the guard region being spaced from the active junction, but sufficiently close thereto that the reverse bias depletion region from the active junction can reach the guard junction, whereby the guard junction modifies the shape of the depletion region from the active junction thus lowering the electric field intensity at a given applied reverse voltage across the active junction.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7385273 |
Power semiconductor device |
Jun. 10, 2008 |
| 7358563 |
CMOS image sensor and method for fabricating the same |
Apr. 15, 2008 |
| 7211861 |
Insulated gate semiconductor device |
May. 1, 2007 |
| 7180158 |
Semiconductor device and method of manufacture |
Feb. 20, 2007 |
| 7166866 |
Edge termination for silicon power devices |
Jan. 23, 2007 |
| 7049675 |
High withstand voltage semiconductor device |
May. 23, 2006 |
| 7049663 |
ESD protection device with high voltage and negative voltage tolerance |
May. 23, 2006 |
| 7042046 |
Super-junction semiconductor device and method of manufacturing the same |
May. 9, 2006 |
| 7002205 |
Super-junction semiconductor device and method of manufacturing the same |
Feb. 21, 2006 |
| 6943410 |
High power vertical semiconductor device |
Sep. 13, 2005 |
| 6940138 |
Semiconductor device, semiconductor gate array, electro-optical device, and electronic equipment |
Sep. 6, 2005 |
| 6906355 |
Semiconductor device |
Jun. 14, 2005 |
| 6879023 |
Seal ring for integrated circuits |
Apr. 12, 2005 |
| 6870201 |
High voltage resistant edge structure for semiconductor components |
Mar. 22, 2005 |
| 6847091 |
Vertical semiconductor component having a reduced electrical surface field |
Jan. 25, 2005 |
| 6828645 |
Voltage withstanding structure for a semiconductor device |
Dec. 7, 2004 |
| 6770917 |
High-voltage diode |
Aug. 3, 2004 |
| 6743703 |
Power diode having improved on resistance and breakdown voltage |
Jun. 1, 2004 |
| 6744112 |
Multiple chip guard rings for integrated circuit and chip guard ring interconnect |
Jun. 1, 2004 |
| 6693327 |
Lateral semiconductor component in thin-film SOI technology |
Feb. 17, 2004 |
| 6693339 |
Semiconductor component and method of manufacturing same |
Feb. 17, 2004 |
| 6674126 |
Semiconductor device |
Jan. 6, 2004 |
| 6646304 |
Universal semiconductor wafer for high-voltage semiconductor components |
Nov. 11, 2003 |
| 6635949 |
Symmetric inducting device for an integrated circuit having a ground shield |
Oct. 21, 2003 |
| 6624494 |
Method for fabricating a power semiconductor device having a floating island voltage sustaining layer |
Sep. 23, 2003 |
| 6621130 |
Semiconductor device and an electronic device |
Sep. 16, 2003 |
| 6605830 |
Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein |
Aug. 12, 2003 |
| 6603186 |
Bipolar transistor with base drive circuit protection |
Aug. 5, 2003 |
| 6576935 |
Bidirectional semiconductor device and method of manufacturing the same |
Jun. 10, 2003 |
| 6555884 |
Semiconductor device for providing a noise shield |
Apr. 29, 2003 |
| 6555893 |
Bar circuit for an integrated circuit |
Apr. 29, 2003 |
| 6518589 |
Dual mode FET & logic circuit having negative differential resistance mode |
Feb. 11, 2003 |
| 6507050 |
Thyristors having a novel arrangement of concentric perimeter zones |
Jan. 14, 2003 |
| 6489666 |
Semiconductor device with improved heat suppression in peripheral regions |
Dec. 3, 2002 |
| 6486524 |
Ultra low Irr fast recovery diode |
Nov. 26, 2002 |
| 6465863 |
Power diode structure |
Oct. 15, 2002 |
| 6445054 |
Semiconductor device |
Sep. 3, 2002 |
| 6441455 |
Low dosage field rings for high voltage semiconductor device |
Aug. 27, 2002 |
| 6410950 |
Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diode |
Jun. 25, 2002 |
| 6369424 |
Field effect transistor having high breakdown withstand capacity |
Apr. 9, 2002 |
| 6262466 |
Lateral semiconductor structure for forming a temperature-compensated voltage limitation |
Jul. 17, 2001 |
| 6242786 |
SOI Semiconductor device with field shield electrode |
Jun. 5, 2001 |
| 6236099 |
Trench MOS device and process for radhard device |
May. 22, 2001 |
| 6215168 |
Doubly graded junction termination extension for edge passivation of semiconductor devices |
Apr. 10, 2001 |
| 6177713 |
Free wheel diode for preventing destruction of a field limiting innermost circumferential layer |
Jan. 23, 2001 |
| 6140690 |
Semiconductor device |
Oct. 31, 2000 |
| 6091108 |
Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage |
Jul. 18, 2000 |
| 6081009 |
High voltage mosfet structure |
Jun. 27, 2000 |
| 6066884 |
Schottky diode guard ring structures |
May. 23, 2000 |
| 6037632 |
Semiconductor device |
Mar. 14, 2000 |
|
|
|
