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Class Information
Number: 257/495
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > Floating pn junction guard region
Description: Subject matter wherein the means for increasing breakdown voltage in the device includes a floating pn junction guard region, that is, a region, free of direct electrical connection, located in the material forming one side of an active pn or other rectifying semiconductor junction, which region forms a pn junction with the material of the one side of the active junction, the guard region being spaced from the active junction, but sufficiently close thereto that the reverse bias depletion region from the active junction can reach the guard junction, whereby the guard junction modifies the shape of the depletion region from the active junction thus lowering the electric field intensity at a given applied reverse voltage across the active junction.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8686532 Semiconductor device having an annular guard ring Apr. 1, 2014
8664723 Integrated circuit structures having base resistance tuning regions and methods for forming the same Mar. 4, 2014
8580644 Multi-level lateral floating coupled capacitor transistor structures Nov. 12, 2013
8564088 Semiconductor device having variably laterally doped zone with decreasing concentration formed in an edge region Oct. 22, 2013
8558315 Trench isolation MOS P-N junction diode device and method for manufacturing the same Oct. 15, 2013
8541839 Semiconductor component and method for producing it Sep. 24, 2013
8487372 Trench MOSFET layout with trenched floating gates and trenched channel stop gates in termination Jul. 16, 2013
8415765 Semiconductor device including a guard ring or an inverted region Apr. 9, 2013
8362585 Junction barrier Schottky diode with enforced upper contact structure and method for robust packaging Jan. 29, 2013
8357985 Bipolar transistor with guard region Jan. 22, 2013
8350366 Power semiconductor element with two-stage impurity concentration profile Jan. 8, 2013
8350352 Bipolar transistor Jan. 8, 2013
8274080 Semiconductor wafer including guard ring patterns and process monitoring patterns Sep. 25, 2012
8264038 Buried floating layer structure for improved breakdown Sep. 11, 2012
8242572 Semiconductor apparatus Aug. 14, 2012
8198651 Electro static discharge protection device Jun. 12, 2012
8178941 Semiconductor device May. 15, 2012
8143679 Termination structure for power devices Mar. 27, 2012
8120136 Bipolar transistor Feb. 21, 2012
8110853 Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication Feb. 7, 2012
8097919 Mesa termination structures for power semiconductor devices including mesa step buffers Jan. 17, 2012
8093623 Semiconductor integrated circuit Jan. 10, 2012
8080858 Semiconductor component having a space saving edge structure Dec. 20, 2011
7999343 Semiconductor component with a space-saving edge termination, and method for production of such component Aug. 16, 2011
7999333 Semiconductor device Aug. 16, 2011
7989223 Method of using spin injection device Aug. 2, 2011
7977762 Effective shield structure for improving substrate isolation of analog circuits from noisy digital circuits on a system-on-chip (SOC) Jul. 12, 2011
7911020 Semiconductor device having breakdown voltage maintaining structure and its manufacturing method Mar. 22, 2011
7863110 Semiconductor device and method for fabricating the same Jan. 4, 2011
7804143 Radiation hardened device Sep. 28, 2010
7791176 Power semiconductor component with trench-type second contact region Sep. 7, 2010
7777292 Semiconductor device Aug. 17, 2010
7772669 Semiconductor device having an improved structure for high withstand voltage Aug. 10, 2010
7768093 Power semiconductor device Aug. 3, 2010
7737465 Semiconductor apparatus and manufacturing method thereof Jun. 15, 2010
7696600 IGBT device and related device having robustness under extreme conditions Apr. 13, 2010
7652307 Semiconductor device with two overlapping diffusion layers held at floating voltage for improving withstand voltage Jan. 26, 2010
7649213 Semiconductor device Jan. 19, 2010
7635909 Semiconductor diode and IGBT Dec. 22, 2009
7595542 Periphery design for charge balance power devices Sep. 29, 2009
7589377 Gate structure with low resistance for high power semiconductor devices Sep. 15, 2009
7582938 I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process Sep. 1, 2009
7566925 Image sensor and method of fabricating the same Jul. 28, 2009
7560787 Trench field plate termination for power devices Jul. 14, 2009
7541660 Power semiconductor device Jun. 2, 2009
7525178 Semiconductor device with capacitively coupled field plate Apr. 28, 2009
7385273 Power semiconductor device Jun. 10, 2008
7358563 CMOS image sensor and method for fabricating the same Apr. 15, 2008
7211861 Insulated gate semiconductor device May. 1, 2007
7180158 Semiconductor device and method of manufacture Feb. 20, 2007

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