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Class Information
Number: 257/493
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., resurf devices)
Description: Subject matter wherein the means to increase breakdown voltage of the device includes a layer of semiconductor material having a sufficiently low doping concentration that it may be fully depleted by the depletion region of a reverse biased junction of the active device prior to avalanche breakdown of the active device, so that upon depletion of the layer of semiconductor material, the effective width of the depletion layer of the reverse biased junction of the active device is greatly expanded, thus resulting in smaller increases in electric field intensity with further increases of reverse voltage.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6903418 |
Semiconductor device |
Jun. 7, 2005 |
| 6897525 |
Semiconductor device and method of manufacturing the same |
May. 24, 2005 |
| 6897095 |
Semiconductor process and integrated circuit having dual metal oxide gate dielectric with single metal gate electrode |
May. 24, 2005 |
| 6888210 |
Lateral DMOS transistor having reduced surface field |
May. 3, 2005 |
| 6882023 |
Floating resurf LDMOSFET and method of manufacturing same |
Apr. 19, 2005 |
| 6878998 |
Semiconductor device with region that changes depth across the direction of current flow |
Apr. 12, 2005 |
| 6876035 |
High voltage N-LDMOS transistors having shallow trench isolation region |
Apr. 5, 2005 |
| 6855991 |
Semiconductor device having a doped lattice matching layer and a method of manufacture therefor |
Feb. 15, 2005 |
| 6853034 |
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same |
Feb. 8, 2005 |
| 6838745 |
Semiconductor device having a separation structure for high withstand voltage |
Jan. 4, 2005 |
| 6833586 |
LDMOS transistor with high voltage source and drain terminals |
Dec. 21, 2004 |
| 6831331 |
Power MOS transistor for absorbing surge current |
Dec. 14, 2004 |
| 6831345 |
High withstand voltage semiconductor device |
Dec. 14, 2004 |
| 6828645 |
Voltage withstanding structure for a semiconductor device |
Dec. 7, 2004 |
| 6825531 |
Lateral DMOS transistor with a self-aligned drain region |
Nov. 30, 2004 |
| 6809393 |
Level shifter |
Oct. 26, 2004 |
| 6787872 |
Lateral conduction superjunction semiconductor device |
Sep. 7, 2004 |
| 6784486 |
Vertical power devices having retrograded-doped transition regions therein |
Aug. 31, 2004 |
| 6784505 |
Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique |
Aug. 31, 2004 |
| 6781194 |
Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein |
Aug. 24, 2004 |
| 6777748 |
Bi-directional semiconductor component |
Aug. 17, 2004 |
| 6768180 |
Superjunction LDMOST using an insulator substrate for power integrated circuits |
Jul. 27, 2004 |
| 6762456 |
Multiple conductive plug structure including at least one conductive plug region and at least one between-conductive-plug region for lateral RF MOS devices |
Jul. 13, 2004 |
| 6750524 |
Trench MOS RESURF super-junction devices |
Jun. 15, 2004 |
| 6730962 |
Method of manufacturing and structure of semiconductor device with field oxide structure |
May. 4, 2004 |
| 6724040 |
Semiconductor device |
Apr. 20, 2004 |
| 6720633 |
High withstand voltage insulated gate N-channel field effect transistor |
Apr. 13, 2004 |
| 6710416 |
Split-gate metal-oxide-semiconductor device |
Mar. 23, 2004 |
| 6693338 |
Power semiconductor device having RESURF layer |
Feb. 17, 2004 |
| 6693339 |
Semiconductor component and method of manufacturing same |
Feb. 17, 2004 |
| 6693340 |
Lateral semiconductor device |
Feb. 17, 2004 |
| 6677626 |
Semiconductor device with alternating conductivity type layer and method of manufacturing the same |
Jan. 13, 2004 |
| 6677642 |
Field effect transistor structure and method of manufacture |
Jan. 13, 2004 |
| 6664593 |
Field effect transistor structure and method of manufacture |
Dec. 16, 2003 |
| 6639272 |
Charge compensation semiconductor configuration |
Oct. 28, 2003 |
| 6624494 |
Method for fabricating a power semiconductor device having a floating island voltage sustaining layer |
Sep. 23, 2003 |
| 6614089 |
Field effect transistor |
Sep. 2, 2003 |
| 6614090 |
Compensation semiconductor component and method of fabricating the semiconductor component |
Sep. 2, 2003 |
| 6608351 |
Semiconductor device comprising a high-voltage circuit element |
Aug. 19, 2003 |
| 6593618 |
MIS semiconductor device having an elevated source/drain structure |
Jul. 15, 2003 |
| 6590281 |
Crack-preventive semiconductor package |
Jul. 8, 2003 |
| 6534836 |
MOSFET semiconductor device |
Mar. 18, 2003 |
| 6528858 |
MOSFETs with differing gate dielectrics and method of formation |
Mar. 4, 2003 |
| 6525376 |
High withstand voltage insulated gate N-channel field effect transistor |
Feb. 25, 2003 |
| 6521962 |
High voltage MOS devices |
Feb. 18, 2003 |
| 6476474 |
Dual-die package structure and method for fabricating the same |
Nov. 5, 2002 |
| 6476457 |
Semiconductor device with drift layer |
Nov. 5, 2002 |
| 6476458 |
Semiconductor device capable of enhancing a withstand voltage at a peripheral region around an element in comparison with a withstand voltage at the element |
Nov. 5, 2002 |
| 6455911 |
Silicon-based semiconductor component with high-efficiency barrier junction termination |
Sep. 24, 2002 |
| 6452280 |
Flip chip semiconductor apparatus with projecting electrodes and method for producing same |
Sep. 17, 2002 |
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