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Class Information
Number: 257/493
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., resurf devices)
Description: Subject matter wherein the means to increase breakdown voltage of the device includes a layer of semiconductor material having a sufficiently low doping concentration that it may be fully depleted by the depletion region of a reverse biased junction of the active device prior to avalanche breakdown of the active device, so that upon depletion of the layer of semiconductor material, the effective width of the depletion layer of the reverse biased junction of the active device is greatly expanded, thus resulting in smaller increases in electric field intensity with further increases of reverse voltage.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7449762 |
Lateral epitaxial GaN metal insulator semiconductor field effect transistor |
Nov. 11, 2008 |
| 7446387 |
High voltage transistor and methods of manufacturing the same |
Nov. 4, 2008 |
| 7436041 |
Electrostatic discharge protection circuit using a double-triggered silicon controlling rectifier |
Oct. 14, 2008 |
| 7436025 |
Termination structures for super junction devices |
Oct. 14, 2008 |
| 7427795 |
Drain-extended MOS transistors and methods for making the same |
Sep. 23, 2008 |
| 7411266 |
Semiconductor device having trench charge compensation regions and method |
Aug. 12, 2008 |
| 7408234 |
Semiconductor device and method for manufacturing the same |
Aug. 5, 2008 |
| 7372104 |
High voltage CMOS devices |
May. 13, 2008 |
| 7372111 |
Semiconductor device with improved breakdown voltage and high current capacity |
May. 13, 2008 |
| 7364994 |
Method for manufacturing a superjunction device with wide mesas |
Apr. 29, 2008 |
| 7365402 |
LDMOS transistor |
Apr. 29, 2008 |
| 7345341 |
High voltage semiconductor devices and methods for fabricating the same |
Mar. 18, 2008 |
| 7335944 |
High-voltage vertical transistor with a multi-gradient drain doping profile |
Feb. 26, 2008 |
| 7329583 |
Method of fabricating isolated semiconductor devices in epi-less substrate |
Feb. 12, 2008 |
| 7327007 |
Semiconductor device with high breakdown voltage |
Feb. 5, 2008 |
| 7294886 |
Power semiconductor device |
Nov. 13, 2007 |
| 7282764 |
Semiconductor device |
Oct. 16, 2007 |
| 7279757 |
Double-sided extended drain field effect transistor |
Oct. 9, 2007 |
| 7276431 |
Method of fabricating isolated semiconductor devices in epi-less substrate |
Oct. 2, 2007 |
| 7276773 |
Power semiconductor device |
Oct. 2, 2007 |
| 7262476 |
Semiconductor device having improved power density |
Aug. 28, 2007 |
| 7259440 |
Fast switching diode with low leakage current |
Aug. 21, 2007 |
| 7205629 |
Lateral super junction field effect transistor |
Apr. 17, 2007 |
| 7186623 |
Integrated semiconductor device and method of manufacturing thereof |
Mar. 6, 2007 |
| 7180158 |
Semiconductor device and method of manufacture |
Feb. 20, 2007 |
| 7180132 |
Enhanced RESURF HVPMOS device with stacked hetero-doping RIM and gradual drift region |
Feb. 20, 2007 |
| 7161223 |
Integrated circuit with a PN junction diode |
Jan. 9, 2007 |
| 7148539 |
Semiconductor structure having a compensated resistance in the LDD area and method for producing the same |
Dec. 12, 2006 |
| 7135751 |
High breakdown voltage junction terminating structure |
Nov. 14, 2006 |
| 7132725 |
Semiconductor device |
Nov. 7, 2006 |
| 7087973 |
Ballast resistors for transistor devices |
Aug. 8, 2006 |
| 7071528 |
Double-triggered silicon controlling rectifier and electrostatic discharge protection circuit thereof |
Jul. 4, 2006 |
| 7071527 |
Semiconductor element and manufacturing method thereof |
Jul. 4, 2006 |
| 7060562 |
Method for fabricating gate electrodes in a field plate trench transistor, and field plate trench transistor |
Jun. 13, 2006 |
| 7052982 |
Method for manufacturing a superjunction device with wide mesas |
May. 30, 2006 |
| 7049675 |
High withstand voltage semiconductor device |
May. 23, 2006 |
| 7026669 |
Lateral channel transistor |
Apr. 11, 2006 |
| 7002211 |
Lateral super-junction semiconductor device |
Feb. 21, 2006 |
| 6992350 |
High voltage power MOSFET having low on-resistance |
Jan. 31, 2006 |
| 6979875 |
Reduced surface field technique for semiconductor devices |
Dec. 27, 2005 |
| 6927453 |
Metal-oxide-semiconductor device including a buried lightly-doped drain region |
Aug. 9, 2005 |
| 6919610 |
Power semiconductor device having RESURF layer |
Jul. 19, 2005 |
| 6919599 |
Short channel trench MOSFET with reduced gate charge |
Jul. 19, 2005 |
| 6914298 |
Double diffusion MOSFET with N+ and P+ type regions at an equal potential |
Jul. 5, 2005 |
| 6911696 |
LDMOS transistor |
Jun. 28, 2005 |
| 6909143 |
Lateral double-diffused MOS transistor having multiple current paths for high breakdown voltage and low on-resistance |
Jun. 21, 2005 |
| 6906381 |
Lateral semiconductor device with low on-resistance and method of making the same |
Jun. 14, 2005 |
| 6903418 |
Semiconductor device |
Jun. 7, 2005 |
| 6897095 |
Semiconductor process and integrated circuit having dual metal oxide gate dielectric with single metal gate electrode |
May. 24, 2005 |
| 6897525 |
Semiconductor device and method of manufacturing the same |
May. 24, 2005 |
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