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Class Information
Number: 257/493
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., resurf devices)
Description: Subject matter wherein the means to increase breakdown voltage of the device includes a layer of semiconductor material having a sufficiently low doping concentration that it may be fully depleted by the depletion region of a reverse biased junction of the active device prior to avalanche breakdown of the active device, so that upon depletion of the layer of semiconductor material, the effective width of the depletion layer of the reverse biased junction of the active device is greatly expanded, thus resulting in smaller increases in electric field intensity with further increases of reverse voltage.










Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8692324 Semiconductor devices having charge balanced structure Apr. 8, 2014
8686498 Lateral double diffused MOS device and method for manufacturing the same Apr. 1, 2014
8643136 High voltage device and manufacturing method thereof Feb. 4, 2014
8643137 Short channel lateral MOSFET Feb. 4, 2014
RE44730 Method of manufacturing a MOSFET structure Jan. 28, 2014
RE44720 Method of manufacturing a MOSFET structure Jan. 21, 2014
8618627 Shielded level shift transistor Dec. 31, 2013
8592903 Bipolar semiconductor device and manufacturing method Nov. 26, 2013
8564088 Semiconductor device having variably laterally doped zone with decreasing concentration formed in an edge region Oct. 22, 2013
8552511 Semiconductor device and manufacturing method thereof Oct. 8, 2013
8541862 Semiconductor device with self-biased isolation Sep. 24, 2013
8502310 III nitride semiconductor electronic device, method for manufacturing III nitride semiconductor electronic device, and III nitride semiconductor epitaxial wafer Aug. 6, 2013
8492867 Semiconductor device including cell region and peripheral region having high breakdown voltage structure Jul. 23, 2013
8450183 Power semiconductor device and method of manufacturing the same May. 28, 2013
8431450 Methods and apparatus for LDMOS transistors Apr. 30, 2013
8410557 Semiconductor device and method of manufacturing the same Apr. 2, 2013
8404526 Semiconductor device and manufacturing method for the same Mar. 26, 2013
8395230 Semiconductor device and method of manufacturing the same Mar. 12, 2013
8384184 Laterally diffused metal oxide semiconductor device Feb. 26, 2013
8362586 Semiconductor device Jan. 29, 2013
8350353 Method of manufacturing silicon carbide semiconductor device Jan. 8, 2013
8344472 Semiconductor device and method Jan. 1, 2013
8338907 Semiconductor device and method of manufacturing the same Dec. 25, 2012
8330213 Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges Dec. 11, 2012
8288839 Transient voltage suppressor having symmetrical breakdown voltages Oct. 16, 2012
8274129 Power transistor with improved high-side operating characteristics and reduced resistance and related apparatus and method Sep. 25, 2012
8269270 Power semiconductor component having a gentle turn-off behavior Sep. 18, 2012
8242572 Semiconductor apparatus Aug. 14, 2012
8227868 Semiconductor device having a plurality of spaced-apart field plates formed on a field insulating film Jul. 24, 2012
8212329 Short channel lateral MOSFET and method Jul. 3, 2012
8148758 High voltage semiconductor device with JFET regions containing dielectrically isolated junctions and method of fabricating the same Apr. 3, 2012
8143691 Semiconductor device and method for making the same Mar. 27, 2012
8138570 Isolated junction field-effect transistor Mar. 20, 2012
8110889 MOCVD single chamber split process for LED manufacturing Feb. 7, 2012
8106454 Power semiconductor device and method for manufacturing same Jan. 31, 2012
8080858 Semiconductor component having a space saving edge structure Dec. 20, 2011
8049255 Display device and method of manufacturing the same Nov. 1, 2011
7999312 Insulated gate-type semiconductor device having a low concentration diffusion region Aug. 16, 2011
7999317 Semiconductor device and manufacturing method thereof Aug. 16, 2011
7989910 Semiconductor device including a resurf region with forward tapered teeth Aug. 2, 2011
7973382 Semiconductor device Jul. 5, 2011
7923767 Non-volatile storage with substrate cut-out and process of fabricating Apr. 12, 2011
7915705 SiC semiconductor device having outer periphery structure Mar. 29, 2011
7906388 Semiconductor device and method for manufacture Mar. 15, 2011
7897998 III-nitride power semiconductor device Mar. 1, 2011
7888735 Integrated complementary low voltage RF-LDMOS Feb. 15, 2011
7880260 Semiconductor device with a semiconductor body and method for its production Feb. 1, 2011
7868378 Methods and apparatus for LDMOS transistors Jan. 11, 2011
7863682 SIC semiconductor having junction barrier Schottky diode Jan. 4, 2011
7851857 Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applications Dec. 14, 2010

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