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Class Information
Number: 257/492
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > In integrated circuit > With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., resurf devices)
Description: Subject matter wherein the means to increase breakdown voltage of the device includes a layer of semiconductor material having a sufficiently low doping concentration that it may be fully depleted by the depletion region of a reverse biased junction of the active device prior to avalanche breakdown of the active device, so that upon depletion of the layer of semiconductor material, the effective width of the depletion layer of the reverse biased junction of the active device is greatly expanded, thus resulting in smaller increases in electric field intensity with further increases of reverse voltage.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5510275 |
Method of making a semiconductor device with a composite drift region composed of a substrate and a second semiconductor material |
Apr. 23, 1996 |
| 5485030 |
Dielectric element isolated semiconductor device and a method of manufacturing the same |
Jan. 16, 1996 |
| 5448100 |
Breakdown diode structure |
Sep. 5, 1995 |
| 5432377 |
Dielectrically isolated semiconductor device and a method for its manufacture |
Jul. 11, 1995 |
| 5406110 |
Resurf lateral double diffused insulated gate field effect transistor |
Apr. 11, 1995 |
| 5382818 |
Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode |
Jan. 17, 1995 |
| 5378912 |
Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region |
Jan. 3, 1995 |
| 5374843 |
Lightly-doped drain MOSFET with improved breakdown characteristics |
Dec. 20, 1994 |
| 5373183 |
Integrated circuit with improved reverse bias breakdown |
Dec. 13, 1994 |
| 5347155 |
Semiconductor device having a lateral DMOST with breakdown voltage raising zones and provisions for exchanging charge with the back gate region |
Sep. 13, 1994 |
| 5338965 |
High voltage structures with oxide isolated source and RESURF drift region in bulk silicon |
Aug. 16, 1994 |
| 5324978 |
Semiconductor device having an improved breakdown voltage-raising structure |
Jun. 28, 1994 |
| 5319236 |
Semiconductor device equipped with a high-voltage MISFET |
Jun. 7, 1994 |
| 5294825 |
High breakdown voltage semiconductor device |
Mar. 15, 1994 |
| 5286995 |
Isolated resurf LDMOS devices for multiple outputs on one die |
Feb. 15, 1994 |
| 5223919 |
Photosensitive device suitable for high voltage operation |
Jun. 29, 1993 |
| 5216275 |
Semiconductor power devices with alternating conductivity type high-voltage breakdown regions |
Jun. 1, 1993 |
| 5113236 |
Integrated circuit device particularly adapted for high voltage applications |
May. 12, 1992 |
| 5086332 |
Planar semiconductor device having high breakdown voltage |
Feb. 4, 1992 |
| 4868921 |
High voltage integrated circuit devices electrically isolated from an integrated circuit substrate |
Sep. 19, 1989 |
| 4866495 |
High power MOSFET and integrated control circuit therefor for high-side switch application |
Sep. 12, 1989 |
| 4862242 |
Semiconductor wafer with an electrically-isolated semiconductor device |
Aug. 29, 1989 |
| 4835596 |
Transistor with a high collector-emitter breakthrough voltage |
May. 30, 1989 |
| 4811075 |
High voltage MOS transistors |
Mar. 7, 1989 |
| 4754310 |
High voltage semiconductor device |
Jun. 28, 1988 |
| 4661838 |
High voltage semiconductor devices electrically isolated from an integrated circuit substrate |
Apr. 28, 1987 |
| 4605948 |
Semiconductor structure for electric field distribution |
Aug. 12, 1986 |
| 4593458 |
Fabrication of integrated circuit with complementary, dielectrically-isolated, high voltage semiconductor devices |
Jun. 10, 1986 |
| 4422089 |
Semiconductor device having a reduced surface field strength |
Dec. 20, 1983 |
| 4409606 |
High breakdown voltage semiconductor device |
Oct. 11, 1983 |
| 4292642 |
Semiconductor device |
Sep. 29, 1981 |
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