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Class Information
Number: 257/492
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > In integrated circuit > With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., resurf devices)
Description: Subject matter wherein the means to increase breakdown voltage of the device includes a layer of semiconductor material having a sufficiently low doping concentration that it may be fully depleted by the depletion region of a reverse biased junction of the active device prior to avalanche breakdown of the active device, so that upon depletion of the layer of semiconductor material, the effective width of the depletion layer of the reverse biased junction of the active device is greatly expanded, thus resulting in smaller increases in electric field intensity with further increases of reverse voltage.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6521962 |
High voltage MOS devices |
Feb. 18, 2003 |
| 6515310 |
Light-emitting device and electric apparatus |
Feb. 4, 2003 |
| 6483149 |
LDMOS device with self-aligned resurf region and method of fabrication |
Nov. 19, 2002 |
| 6479892 |
Enhanced probe for gathering data from semiconductor devices |
Nov. 12, 2002 |
| 6476458 |
Semiconductor device capable of enhancing a withstand voltage at a peripheral region around an element in comparison with a withstand voltage at the element |
Nov. 5, 2002 |
| 6476457 |
Semiconductor device with drift layer |
Nov. 5, 2002 |
| 6439514 |
Semiconductor device with elements surrounded by trenches |
Aug. 27, 2002 |
| 6429501 |
Semiconductor device having high breakdown voltage and method for manufacturing the device |
Aug. 6, 2002 |
| 6424010 |
Method of manufacturing a semiconductor device having reduced power consumption without a reduction in the source/drain breakdown voltage |
Jul. 23, 2002 |
| 6410950 |
Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diode |
Jun. 25, 2002 |
| 6404012 |
Semiconductor device having a reverse conductive type diffusion layer in an extended drain diffusion layer |
Jun. 11, 2002 |
| 6388271 |
Semiconductor component |
May. 14, 2002 |
| 6380614 |
Non-contact type IC card and process for manufacturing same |
Apr. 30, 2002 |
| 6376891 |
High voltage breakdown isolation semiconductor device and manufacturing process for making the device |
Apr. 23, 2002 |
| 6372557 |
Method of manufacturing a lateral fet having source contact to substrate with low resistance |
Apr. 16, 2002 |
| 6353236 |
Semiconductor surge absorber, electrical-electronic apparatus, and power module using the same |
Mar. 5, 2002 |
| 6288424 |
Semiconductor device having LDMOS transistors and a screening layer |
Sep. 11, 2001 |
| 6274918 |
Integrated circuit diode, and method for fabricating same |
Aug. 14, 2001 |
| 6242787 |
Semiconductor device and manufacturing method thereof |
Jun. 5, 2001 |
| 6236100 |
Semiconductor with high-voltage components and low-voltage components on a shared die |
May. 22, 2001 |
| 6160304 |
Semiconductor device comprising a half-bridge circuit |
Dec. 12, 2000 |
| 6160290 |
Reduced surface field device having an extended field plate and method for forming the same |
Dec. 12, 2000 |
| 6144070 |
High breakdown-voltage transistor with electrostatic discharge protection |
Nov. 7, 2000 |
| 6100572 |
Amorphous silicon combined with resurf region for termination for MOSgated device |
Aug. 8, 2000 |
| 6069396 |
High breakdown voltage semiconductor device |
May. 30, 2000 |
| 6023078 |
Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability |
Feb. 8, 2000 |
| 6002158 |
High breakdown-voltage diode with electric-field relaxation region |
Dec. 14, 1999 |
| 5977569 |
Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability |
Nov. 2, 1999 |
| 5969400 |
High withstand voltage semiconductor device |
Oct. 19, 1999 |
| 5917217 |
Lateral field effect transistor and method of manufacturing the same |
Jun. 29, 1999 |
| 5894156 |
Semiconductor device having a high breakdown voltage isolation region |
Apr. 13, 1999 |
| 5883413 |
Lateral high-voltage DMOS transistor with drain zone charge draining |
Mar. 16, 1999 |
| 5874768 |
Semiconductor device having a high breakdown voltage |
Feb. 23, 1999 |
| 5861657 |
Graded concentration epitaxial substrate for semiconductor device having resurf diffusion |
Jan. 19, 1999 |
| 5852314 |
Thin epitaxy resurf integrated circuit containing high voltage p-channel and n-channel devices with source or drain not tied to ground |
Dec. 22, 1998 |
| 5847931 |
Contactless integrated circuit card with a conductive polymer antenna |
Dec. 8, 1998 |
| 5834823 |
Transistor with constant voltage diode |
Nov. 10, 1998 |
| 5777366 |
Integrated device with a structure for protection against high electric fields |
Jul. 7, 1998 |
| 5760417 |
Semiconductor electron emission device |
Jun. 2, 1998 |
| 5760440 |
Back-source MOSFET |
Jun. 2, 1998 |
| 5712502 |
Semiconductor component having an edge termination means with high field blocking capability |
Jan. 27, 1998 |
| 5686755 |
LDMOS resurf high voltage transistor |
Nov. 11, 1997 |
| 5640040 |
High breakdown voltage semiconductor device |
Jun. 17, 1997 |
| 5610432 |
Semiconductor device with a fast lateral dmost provided with a high-voltage source electrode |
Mar. 11, 1997 |
| 5583365 |
Fully depleted lateral transistor |
Dec. 10, 1996 |
| 5578859 |
Semiconductor structure having one or more lateral, high-blocking semiconductor components |
Nov. 26, 1996 |
| 5569937 |
High breakdown voltage silicon carbide transistor |
Oct. 29, 1996 |
| 5554872 |
Semiconductor device and method of increasing device breakdown voltage of semiconductor device |
Sep. 10, 1996 |
| 5523601 |
High-breakdown-voltage MOS transistor |
Jun. 4, 1996 |
| 5517046 |
High voltage lateral DMOS device with enhanced drift region |
May. 14, 1996 |
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