| |
 |
|
Class Information
Number: 257/492
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > In integrated circuit > With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., resurf devices)
Description: Subject matter wherein the means to increase breakdown voltage of the device includes a layer of semiconductor material having a sufficiently low doping concentration that it may be fully depleted by the depletion region of a reverse biased junction of the active device prior to avalanche breakdown of the active device, so that upon depletion of the layer of semiconductor material, the effective width of the depletion layer of the reverse biased junction of the active device is greatly expanded, thus resulting in smaller increases in electric field intensity with further increases of reverse voltage.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6906381 |
Lateral semiconductor device with low on-resistance and method of making the same |
Jun. 14, 2005 |
| 6903418 |
Semiconductor device |
Jun. 7, 2005 |
| 6897525 |
Semiconductor device and method of manufacturing the same |
May. 24, 2005 |
| 6888210 |
Lateral DMOS transistor having reduced surface field |
May. 3, 2005 |
| 6878998 |
Semiconductor device with region that changes depth across the direction of current flow |
Apr. 12, 2005 |
| 6876035 |
High voltage N-LDMOS transistors having shallow trench isolation region |
Apr. 5, 2005 |
| 6870222 |
Device structure of RF LDMOS with trench type sinker |
Mar. 22, 2005 |
| 6870223 |
High power semiconductor device having a Schottky barrier diode |
Mar. 22, 2005 |
| 6855991 |
Semiconductor device having a doped lattice matching layer and a method of manufacture therefor |
Feb. 15, 2005 |
| 6853034 |
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same |
Feb. 8, 2005 |
| 6838729 |
Semiconductor component with enhanced avalanche ruggedness |
Jan. 4, 2005 |
| 6838745 |
Semiconductor device having a separation structure for high withstand voltage |
Jan. 4, 2005 |
| 6835993 |
Bidirectional shallow trench superjunction device with resurf region |
Dec. 28, 2004 |
| 6833586 |
LDMOS transistor with high voltage source and drain terminals |
Dec. 21, 2004 |
| 6831345 |
High withstand voltage semiconductor device |
Dec. 14, 2004 |
| 6831331 |
Power MOS transistor for absorbing surge current |
Dec. 14, 2004 |
| 6828645 |
Voltage withstanding structure for a semiconductor device |
Dec. 7, 2004 |
| 6825531 |
Lateral DMOS transistor with a self-aligned drain region |
Nov. 30, 2004 |
| 6809393 |
Level shifter |
Oct. 26, 2004 |
| 6787872 |
Lateral conduction superjunction semiconductor device |
Sep. 7, 2004 |
| 6784486 |
Vertical power devices having retrograded-doped transition regions therein |
Aug. 31, 2004 |
| 6781194 |
Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein |
Aug. 24, 2004 |
| 6777748 |
Bi-directional semiconductor component |
Aug. 17, 2004 |
| 6762456 |
Multiple conductive plug structure including at least one conductive plug region and at least one between-conductive-plug region for lateral RF MOS devices |
Jul. 13, 2004 |
| 6750524 |
Trench MOS RESURF super-junction devices |
Jun. 15, 2004 |
| 6734493 |
Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer |
May. 11, 2004 |
| 6724040 |
Semiconductor device |
Apr. 20, 2004 |
| 6720633 |
High withstand voltage insulated gate N-channel field effect transistor |
Apr. 13, 2004 |
| 6717230 |
Lateral device with improved conductivity and blocking control |
Apr. 6, 2004 |
| 6693338 |
Power semiconductor device having RESURF layer |
Feb. 17, 2004 |
| 6693339 |
Semiconductor component and method of manufacturing same |
Feb. 17, 2004 |
| 6693340 |
Lateral semiconductor device |
Feb. 17, 2004 |
| 6677642 |
Field effect transistor structure and method of manufacture |
Jan. 13, 2004 |
| 6677626 |
Semiconductor device with alternating conductivity type layer and method of manufacturing the same |
Jan. 13, 2004 |
| 6664593 |
Field effect transistor structure and method of manufacture |
Dec. 16, 2003 |
| 6657257 |
Insulated gate field effect transistor and semiconductor integrated circuit |
Dec. 2, 2003 |
| 6646304 |
Universal semiconductor wafer for high-voltage semiconductor components |
Nov. 11, 2003 |
| 6639277 |
High-voltage transistor with multi-layer conduction region |
Oct. 28, 2003 |
| 6639272 |
Charge compensation semiconductor configuration |
Oct. 28, 2003 |
| 6621122 |
Termination structure for superjunction device |
Sep. 16, 2003 |
| 6617652 |
High breakdown voltage semiconductor device |
Sep. 9, 2003 |
| 6614110 |
Module with bumps for connection and support |
Sep. 2, 2003 |
| 6614090 |
Compensation semiconductor component and method of fabricating the semiconductor component |
Sep. 2, 2003 |
| 6614089 |
Field effect transistor |
Sep. 2, 2003 |
| 6608351 |
Semiconductor device comprising a high-voltage circuit element |
Aug. 19, 2003 |
| 6603185 |
Voltage withstanding structure for a semiconductor device |
Aug. 5, 2003 |
| 6590283 |
Method for hermetic leadless device interconnect using a submount |
Jul. 8, 2003 |
| 6586798 |
High voltage MOS-gated power device |
Jul. 1, 2003 |
| 6566726 |
Semiconductor device and power converter using the same |
May. 20, 2003 |
| 6525376 |
High withstand voltage insulated gate N-channel field effect transistor |
Feb. 25, 2003 |
|
|
|
