Resources Contact Us Home
Browse by Category: Main > Physics
Class Information
Number: 257/492
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > In integrated circuit > With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., resurf devices)
Description: Subject matter wherein the means to increase breakdown voltage of the device includes a layer of semiconductor material having a sufficiently low doping concentration that it may be fully depleted by the depletion region of a reverse biased junction of the active device prior to avalanche breakdown of the active device, so that upon depletion of the layer of semiconductor material, the effective width of the depletion layer of the reverse biased junction of the active device is greatly expanded, thus resulting in smaller increases in electric field intensity with further increases of reverse voltage.

Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
7902645 Semiconductor device, semiconductor element, and substrate Mar. 8, 2011
7897459 Semiconductor device and manufacturing method thereof Mar. 1, 2011
7898027 Metal-oxide-semiconductor device Mar. 1, 2011
7893467 Silicon carbide semiconductor device having junction barrier Schottky diode Feb. 22, 2011
7868378 Methods and apparatus for LDMOS transistors Jan. 11, 2011
7868397 Vertical semiconductor device Jan. 11, 2011
7855415 Power semiconductor devices having termination structures and methods of manufacture Dec. 21, 2010
7851314 Short channel lateral MOSFET and method Dec. 14, 2010
7851857 Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applications Dec. 14, 2010
7851883 Semiconductor device and method of manufacture thereof Dec. 14, 2010
7838969 Diode Nov. 23, 2010
7829947 Bottom-drain LDMOS power MOSFET structure having a top drain strap Nov. 9, 2010
7821082 Method for increasing breaking down voltage of lateral diffused metal oxide semiconductor transistor Oct. 26, 2010
7816756 Power semiconductor device Oct. 19, 2010
7812402 Semiconductor device Oct. 12, 2010
7804150 Lateral trench gate FET with direct source-drain current path Sep. 28, 2010
7786532 Structure of a high breakdown voltage element for use in high power application Aug. 31, 2010
7777274 Power semiconductor component having a field electrode and method for producing this component Aug. 17, 2010
7772668 Shielded gate trench FET with multiple channels Aug. 10, 2010
7768093 Power semiconductor device Aug. 3, 2010
7736964 Semiconductor device, and method for manufacturing the same Jun. 15, 2010
7732821 Silicon carbide semiconductor device Jun. 8, 2010
7719029 Negative feedback avalanche diode May. 18, 2010
7705399 Semiconductor device with field insulation film formed therein Apr. 27, 2010
7692242 Semiconductor device used as high-speed switching device and power device Apr. 6, 2010
7679160 Semiconductor device and method of forming a semiconductor device Mar. 16, 2010
7675120 Integrated circuit having a multipurpose resistor for suppression of a parasitic transistor or other purposes Mar. 9, 2010
7671440 Lateral field-effect transistor having an insulated trench gate electrode Mar. 2, 2010
7663203 High-voltage PMOS transistor Feb. 16, 2010
7659607 Accessible electronic storage apparatus for use with support frame Feb. 9, 2010
7659596 Lateral high-voltage devices with optimum variation lateral flux by using field plate Feb. 9, 2010
7659575 Semiconductor device Feb. 9, 2010
7656011 Diode Feb. 2, 2010
7652307 Semiconductor device with two overlapping diffusion layers held at floating voltage for improving withstand voltage Jan. 26, 2010
7642139 Semiconductor device production method and semiconductor device Jan. 5, 2010
7638368 Reverse blocking semiconductor device and a method for manufacturing the same Dec. 29, 2009
7629631 High voltage semiconductor devices with JFET regions containing dielectrically isolated junctions Dec. 8, 2009
7602037 High voltage semiconductor devices and methods for fabricating the same Oct. 13, 2009
7598586 Semiconductor device and production method therefor Oct. 6, 2009
7589389 Semiconductor device and method of manufacturing the same Sep. 15, 2009
7576393 Semiconductor device and method of manufacturing the same Aug. 18, 2009
7546557 Systems and methods for reducing IR-drop noise Jun. 9, 2009
7541248 Integrated semiconductor device and method of manufacturing thereof Jun. 2, 2009
7541660 Power semiconductor device Jun. 2, 2009
7538407 Semiconductor apparatus May. 26, 2009
7535057 DMOS transistor with a poly-filled deep trench for improved performance May. 19, 2009
7531888 Integrated latch-up free insulated gate bipolar transistor May. 12, 2009
7518197 Power semiconductor device Apr. 14, 2009
7511319 Methods and apparatus for a stepped-drift MOSFET Mar. 31, 2009
7498652 Non-uniformly doped high voltage drain-extended transistor and method of manufacture thereof Mar. 3, 2009

1 2 3 4 5 6

  Recently Added Patents
Process to extract quassinoids
Lubricating oil compositions
Quaternary chalcogenide wafers
White light emitting diode (LED) lighting device
Seat post having a non-uniform cross-section
Managing a spinlock indicative of exclusive access to a system resource
  Randomly Featured Patents
Inkjet printhead with a two dimensional array of ink ejection nozzle arrangements
Accommodating intraocular lens
Inhibitors of cathepsin S
Drive sheave of elevator
Automatic shade cutter
Mud box for joint compound application
Casserole dish with lid
Tetrahydropyrimidone inhibitors of fatty acid binding protein and method
2-wire/3-wire converting apparatus
Splint for a wrist brace