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Class Information
Number: 257/492
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > In integrated circuit > With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., resurf devices)
Description: Subject matter wherein the means to increase breakdown voltage of the device includes a layer of semiconductor material having a sufficiently low doping concentration that it may be fully depleted by the depletion region of a reverse biased junction of the active device prior to avalanche breakdown of the active device, so that upon depletion of the layer of semiconductor material, the effective width of the depletion layer of the reverse biased junction of the active device is greatly expanded, thus resulting in smaller increases in electric field intensity with further increases of reverse voltage.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7427795 |
Drain-extended MOS transistors and methods for making the same |
Sep. 23, 2008 |
| 7411272 |
Semiconductor device and method of forming a semiconductor device |
Aug. 12, 2008 |
| 7411266 |
Semiconductor device having trench charge compensation regions and method |
Aug. 12, 2008 |
| 7408234 |
Semiconductor device and method for manufacturing the same |
Aug. 5, 2008 |
| 7385250 |
Semiconductor device |
Jun. 10, 2008 |
| 7372104 |
High voltage CMOS devices |
May. 13, 2008 |
| 7365402 |
LDMOS transistor |
Apr. 29, 2008 |
| 7364994 |
Method for manufacturing a superjunction device with wide mesas |
Apr. 29, 2008 |
| 7358563 |
CMOS image sensor and method for fabricating the same |
Apr. 15, 2008 |
| 7352046 |
Semiconductor integrated circuit device |
Apr. 1, 2008 |
| 7345341 |
High voltage semiconductor devices and methods for fabricating the same |
Mar. 18, 2008 |
| 7335944 |
High-voltage vertical transistor with a multi-gradient drain doping profile |
Feb. 26, 2008 |
| 7329583 |
Method of fabricating isolated semiconductor devices in epi-less substrate |
Feb. 12, 2008 |
| 7327007 |
Semiconductor device with high breakdown voltage |
Feb. 5, 2008 |
| 7307330 |
Reverse blocking semiconductor device and a method for manufacturing the same |
Dec. 11, 2007 |
| 7304363 |
Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device |
Dec. 4, 2007 |
| 7294886 |
Power semiconductor device |
Nov. 13, 2007 |
| 7294901 |
Semiconductor device with improved resurf features including trench isolation structure |
Nov. 13, 2007 |
| 7285837 |
Electrostatic discharge device integrated with pad |
Oct. 23, 2007 |
| 7279757 |
Double-sided extended drain field effect transistor |
Oct. 9, 2007 |
| 7276431 |
Method of fabricating isolated semiconductor devices in epi-less substrate |
Oct. 2, 2007 |
| 7276773 |
Power semiconductor device |
Oct. 2, 2007 |
| 7259440 |
Fast switching diode with low leakage current |
Aug. 21, 2007 |
| 7253476 |
Semiconductor device with alternating conductivity type layer and method of manufacturing the same |
Aug. 7, 2007 |
| 7205629 |
Lateral super junction field effect transistor |
Apr. 17, 2007 |
| 7180158 |
Semiconductor device and method of manufacture |
Feb. 20, 2007 |
| 7180132 |
Enhanced RESURF HVPMOS device with stacked hetero-doping RIM and gradual drift region |
Feb. 20, 2007 |
| 7180152 |
Process for resurf diffusion for high voltage MOSFET |
Feb. 20, 2007 |
| 7170134 |
Semiconductor device |
Jan. 30, 2007 |
| 7157772 |
Semiconductor device and method of fabricating the same |
Jan. 2, 2007 |
| 7148539 |
Semiconductor structure having a compensated resistance in the LDD area and method for producing the same |
Dec. 12, 2006 |
| 7135751 |
High breakdown voltage junction terminating structure |
Nov. 14, 2006 |
| 7132725 |
Semiconductor device |
Nov. 7, 2006 |
| 7071528 |
Double-triggered silicon controlling rectifier and electrostatic discharge protection circuit thereof |
Jul. 4, 2006 |
| 7071527 |
Semiconductor element and manufacturing method thereof |
Jul. 4, 2006 |
| 7052982 |
Method for manufacturing a superjunction device with wide mesas |
May. 30, 2006 |
| 7049675 |
High withstand voltage semiconductor device |
May. 23, 2006 |
| 7049674 |
Reverse blocking semiconductor device and a method for manufacturing the same |
May. 23, 2006 |
| 7026669 |
Lateral channel transistor |
Apr. 11, 2006 |
| 7019392 |
Storage apparatus, card type storage apparatus, and electronic apparatus |
Mar. 28, 2006 |
| 7002211 |
Lateral super-junction semiconductor device |
Feb. 21, 2006 |
| 6979875 |
Reduced surface field technique for semiconductor devices |
Dec. 27, 2005 |
| 6940126 |
Field-effect-controllable semiconductor component and method for producing the semiconductor component |
Sep. 6, 2005 |
| 6936907 |
Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity |
Aug. 30, 2005 |
| 6919599 |
Short channel trench MOSFET with reduced gate charge |
Jul. 19, 2005 |
| 6919610 |
Power semiconductor device having RESURF layer |
Jul. 19, 2005 |
| 6914298 |
Double diffusion MOSFET with N+ and P+ type regions at an equal potential |
Jul. 5, 2005 |
| 6911696 |
LDMOS transistor |
Jun. 28, 2005 |
| 6906381 |
Lateral semiconductor device with low on-resistance and method of making the same |
Jun. 14, 2005 |
| 6903418 |
Semiconductor device |
Jun. 7, 2005 |
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