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Class Information
Number: 257/492
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > In integrated circuit > With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., resurf devices)
Description: Subject matter wherein the means to increase breakdown voltage of the device includes a layer of semiconductor material having a sufficiently low doping concentration that it may be fully depleted by the depletion region of a reverse biased junction of the active device prior to avalanche breakdown of the active device, so that upon depletion of the layer of semiconductor material, the effective width of the depletion layer of the reverse biased junction of the active device is greatly expanded, thus resulting in smaller increases in electric field intensity with further increases of reverse voltage.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710617 Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation region Apr. 29, 2014
8691707 Voltage switchable dielectric for die-level electrostatic discharge (ESD) protection Apr. 8, 2014
8643099 Integrated lateral high voltage MOSFET Feb. 4, 2014
8643136 High voltage device and manufacturing method thereof Feb. 4, 2014
8643137 Short channel lateral MOSFET Feb. 4, 2014
8633562 Voltage switchable dielectric for die-level electrostatic discharge (ESD) protection Jan. 21, 2014
8618627 Shielded level shift transistor Dec. 31, 2013
8552511 Semiconductor device and manufacturing method thereof Oct. 8, 2013
8546210 Semiconductor device and method for manufacturing the same Oct. 1, 2013
8541862 Semiconductor device with self-biased isolation Sep. 24, 2013
8501586 Power semiconductor Aug. 6, 2013
8497167 EDS protection diode with pwell-nwell resurf Jul. 30, 2013
8482029 Semiconductor device and integrated circuit including the semiconductor device Jul. 9, 2013
8421152 Semiconductor device and manufacturing method for the same Apr. 16, 2013
8421182 Field effect transistor having MOS structure made of nitride compound semiconductor Apr. 16, 2013
8410557 Semiconductor device and method of manufacturing the same Apr. 2, 2013
8404526 Semiconductor device and manufacturing method for the same Mar. 26, 2013
8395244 Fast recovery diode Mar. 12, 2013
8384184 Laterally diffused metal oxide semiconductor device Feb. 26, 2013
8362586 Semiconductor device Jan. 29, 2013
8357986 High speed orthogonal gate EDMOS device and fabrication Jan. 22, 2013
8350338 Semiconductor device including high field regions and related method Jan. 8, 2013
8350325 Power semiconductor device Jan. 8, 2013
8344472 Semiconductor device and method Jan. 1, 2013
8330213 Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges Dec. 11, 2012
8330233 Semiconductor device Dec. 11, 2012
8274129 Power transistor with improved high-side operating characteristics and reduced resistance and related apparatus and method Sep. 25, 2012
8269270 Power semiconductor component having a gentle turn-off behavior Sep. 18, 2012
8242572 Semiconductor apparatus Aug. 14, 2012
8227868 Semiconductor device having a plurality of spaced-apart field plates formed on a field insulating film Jul. 24, 2012
8212329 Short channel lateral MOSFET and method Jul. 3, 2012
8198154 Method of forming bottom-drain LDMOS power MOSFET structure having a top drain strap Jun. 12, 2012
8148758 High voltage semiconductor device with JFET regions containing dielectrically isolated junctions and method of fabricating the same Apr. 3, 2012
8148778 Semiconductor device and method for manufacturing the same Apr. 3, 2012
8143691 Semiconductor device and method for making the same Mar. 27, 2012
8138570 Isolated junction field-effect transistor Mar. 20, 2012
8106454 Power semiconductor device and method for manufacturing same Jan. 31, 2012
8097919 Mesa termination structures for power semiconductor devices including mesa step buffers Jan. 17, 2012
8080858 Semiconductor component having a space saving edge structure Dec. 20, 2011
8053859 Semiconductor device and the method of manufacturing the same Nov. 8, 2011
8034700 Method of fabricating a diode Oct. 11, 2011
7999312 Insulated gate-type semiconductor device having a low concentration diffusion region Aug. 16, 2011
7989910 Semiconductor device including a resurf region with forward tapered teeth Aug. 2, 2011
7973382 Semiconductor device Jul. 5, 2011
7964931 Semiconductor device Jun. 21, 2011
7948040 Semiconductor device May. 24, 2011
7944035 Double sided semiconduction device with edge contact and package therefor May. 17, 2011
7932558 Semiconductor device and method for manufacturing the same Apr. 26, 2011
7915705 SiC semiconductor device having outer periphery structure Mar. 29, 2011
7906388 Semiconductor device and method for manufacture Mar. 15, 2011

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