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Class Information
Number: 257/490
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > Field relief electrode > Combined with floating pn junction guard region
Description: Subject matter wherein the means for increasing breakdown voltage includes, in addition to a field relief electrode, a floating pn junction guard region, i.e., a region free of direct electrical connection located in the material forming one side of an active pn, or other rectifying semiconductor junction, which region forms a pn junction with the material of the one side of the active junction, the guard region being spaced from the active junction, but sufficiently close thereto that the reverse bias depletion region from the active junction can reach the guard junction, whereby the guard junction modifies the shape of the depletion region from the active junction thus lowering the electric field intensity at a given applied reverse voltage across the active junction.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8710585 High voltage fast recovery trench diode Apr. 29, 2014
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8373247 Semiconductor device Feb. 12, 2013
8357985 Bipolar transistor with guard region Jan. 22, 2013
8274080 Semiconductor wafer including guard ring patterns and process monitoring patterns Sep. 25, 2012
8212323 Seal ring structure for integrated circuits Jul. 3, 2012
8198651 Electro static discharge protection device Jun. 12, 2012
8188578 Seal ring structure for integrated circuits May. 29, 2012
8080858 Semiconductor component having a space saving edge structure Dec. 20, 2011
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7804143 Radiation hardened device Sep. 28, 2010
7777292 Semiconductor device Aug. 17, 2010
7772669 Semiconductor device having an improved structure for high withstand voltage Aug. 10, 2010
7709924 Semiconductor diode structures May. 4, 2010
7683453 Edge termination region for high-voltage bipolar-CMOS-DMOS integrated circuit devices Mar. 23, 2010
7675135 Integrated high voltage power device having an edge termination of enhanced effectiveness Mar. 9, 2010
7652307 Semiconductor device with two overlapping diffusion layers held at floating voltage for improving withstand voltage Jan. 26, 2010
7649223 Semiconductor device having superjunction structure and method for manufacturing the same Jan. 19, 2010
7629665 Semiconductor component with a channel stop zone Dec. 8, 2009
7605446 Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation Oct. 20, 2009
7598585 Structure for preventing leakage of a semiconductor device Oct. 6, 2009
7582938 I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process Sep. 1, 2009
7525178 Semiconductor device with capacitively coupled field plate Apr. 28, 2009
7388266 Structure for leakage prevention of a high voltage device Jun. 17, 2008
7385273 Power semiconductor device Jun. 10, 2008
7372111 Semiconductor device with improved breakdown voltage and high current capacity May. 13, 2008
7279768 Semiconductor device for overvoltage protection Oct. 9, 2007
7276772 Semiconductor device Oct. 2, 2007
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7193255 Semiconductor device with floating conducting region placed between device elements Mar. 20, 2007
7135742 Insulated gate type semiconductor device and method for fabricating same Nov. 14, 2006
7119379 Semiconductor device Oct. 10, 2006
7112865 Diode and method for manufacturing the same Sep. 26, 2006
7049663 ESD protection device with high voltage and negative voltage tolerance May. 23, 2006
6992362 Semiconductor with high-voltage components and low-voltage components on a shared die Jan. 31, 2006
6943406 Semiconductor device Sep. 13, 2005
6943410 High power vertical semiconductor device Sep. 13, 2005
6906355 Semiconductor device Jun. 14, 2005
6879023 Seal ring for integrated circuits Apr. 12, 2005
6870201 High voltage resistant edge structure for semiconductor components Mar. 22, 2005
6815793 Body of a semiconductor material with a reduced mean free path length Nov. 9, 2004
6787873 Semiconductor device for providing a noise shield Sep. 7, 2004
6770917 High-voltage diode Aug. 3, 2004

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