| |
 |
|
Class Information
Number: 257/490
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > Field relief electrode > Combined with floating pn junction guard region
Description: Subject matter wherein the means for increasing breakdown voltage includes, in addition to a field relief electrode, a floating pn junction guard region, i.e., a region free of direct electrical connection located in the material forming one side of an active pn, or other rectifying semiconductor junction, which region forms a pn junction with the material of the one side of the active junction, the guard region being spaced from the active junction, but sufficiently close thereto that the reverse bias depletion region from the active junction can reach the guard junction, whereby the guard junction modifies the shape of the depletion region from the active junction thus lowering the electric field intensity at a given applied reverse voltage across the active junction.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7388266 |
Structure for leakage prevention of a high voltage device |
Jun. 17, 2008 |
| 7385273 |
Power semiconductor device |
Jun. 10, 2008 |
| 7372111 |
Semiconductor device with improved breakdown voltage and high current capacity |
May. 13, 2008 |
| 7279768 |
Semiconductor device for overvoltage protection |
Oct. 9, 2007 |
| 7276772 |
Semiconductor device |
Oct. 2, 2007 |
| 7205628 |
Semiconductor device |
Apr. 17, 2007 |
| 7193255 |
Semiconductor device with floating conducting region placed between device elements |
Mar. 20, 2007 |
| 7135742 |
Insulated gate type semiconductor device and method for fabricating same |
Nov. 14, 2006 |
| 7119379 |
Semiconductor device |
Oct. 10, 2006 |
| 7112865 |
Diode and method for manufacturing the same |
Sep. 26, 2006 |
| 7049663 |
ESD protection device with high voltage and negative voltage tolerance |
May. 23, 2006 |
| 6992362 |
Semiconductor with high-voltage components and low-voltage components on a shared die |
Jan. 31, 2006 |
| 6943406 |
Semiconductor device |
Sep. 13, 2005 |
| 6943410 |
High power vertical semiconductor device |
Sep. 13, 2005 |
| 6906355 |
Semiconductor device |
Jun. 14, 2005 |
| 6879023 |
Seal ring for integrated circuits |
Apr. 12, 2005 |
| 6870201 |
High voltage resistant edge structure for semiconductor components |
Mar. 22, 2005 |
| 6815793 |
Body of a semiconductor material with a reduced mean free path length |
Nov. 9, 2004 |
| 6787873 |
Semiconductor device for providing a noise shield |
Sep. 7, 2004 |
| 6770917 |
High-voltage diode |
Aug. 3, 2004 |
| 6750506 |
High-voltage semiconductor device |
Jun. 15, 2004 |
| 6724042 |
Super-junction semiconductor device |
Apr. 20, 2004 |
| 6724063 |
Photodiode and photodiode module |
Apr. 20, 2004 |
| 6693327 |
Lateral semiconductor component in thin-film SOI technology |
Feb. 17, 2004 |
| 6646304 |
Universal semiconductor wafer for high-voltage semiconductor components |
Nov. 11, 2003 |
| 6639270 |
Non-volatile memory cell |
Oct. 28, 2003 |
| 6624487 |
Drain-extended MOS ESD protection structure |
Sep. 23, 2003 |
| 6621122 |
Termination structure for superjunction device |
Sep. 16, 2003 |
| 6605830 |
Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein |
Aug. 12, 2003 |
| 6603186 |
Bipolar transistor with base drive circuit protection |
Aug. 5, 2003 |
| 6570251 |
Under bump metalization pad and solder bump connections |
May. 27, 2003 |
| 6566726 |
Semiconductor device and power converter using the same |
May. 20, 2003 |
| 6555884 |
Semiconductor device for providing a noise shield |
Apr. 29, 2003 |
| 6525390 |
MIS semiconductor device with low on resistance and high breakdown voltage |
Feb. 25, 2003 |
| 6525389 |
High voltage termination with amorphous silicon layer below the field plate |
Feb. 25, 2003 |
| 6492689 |
Semiconductor device switching regulator used as a DC regulated power supply |
Dec. 10, 2002 |
| 6489666 |
Semiconductor device with improved heat suppression in peripheral regions |
Dec. 3, 2002 |
| 6486524 |
Ultra low Irr fast recovery diode |
Nov. 26, 2002 |
| 6455911 |
Silicon-based semiconductor component with high-efficiency barrier junction termination |
Sep. 24, 2002 |
| 6441455 |
Low dosage field rings for high voltage semiconductor device |
Aug. 27, 2002 |
| 6437415 |
Photodiode and photodiode module |
Aug. 20, 2002 |
| 6369424 |
Field effect transistor having high breakdown withstand capacity |
Apr. 9, 2002 |
| 6252289 |
Electrical contact and housing for use as an interface between a testing fixture and a device under test |
Jun. 26, 2001 |
| 6236100 |
Semiconductor with high-voltage components and low-voltage components on a shared die |
May. 22, 2001 |
| 6215167 |
Power semiconductor device employing field plate and manufacturing method thereof |
Apr. 10, 2001 |
| 6215168 |
Doubly graded junction termination extension for edge passivation of semiconductor devices |
Apr. 10, 2001 |
| 6198126 |
Semiconductor device and power converter using same |
Mar. 6, 2001 |
| 6177713 |
Free wheel diode for preventing destruction of a field limiting innermost circumferential layer |
Jan. 23, 2001 |
| 6166418 |
High-voltage SOI thin-film transistor |
Dec. 26, 2000 |
| 6150702 |
Lateral high-voltage semiconductor device having an outwardly extended electrode |
Nov. 21, 2000 |
|
|
|
