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Class Information
Number: 257/49
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction)
Description: Subject matter wherein there is an active junction (e.g., a junction between dissimilar materials, or a junction induced by an applied electric field, which exhibits non-linear current-voltage characteristics) and at least part of the active junction is formed by a semiconductor material in polycrystalline or amorphous form.

Sub-classes under this class:

Class Number Class Name Patents
257/52 Amorphous semiconductor material 374
257/66 Field effect device in non-single crystal, or recrystallized, semiconductor material 1,442
257/50 Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element) 339
257/65 Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., ge x si 1- x, polycrystalline silicon with dangling bond modifier) 315
257/51 Non-single crystal, or recrystallized, material forms active junction with single crystal material (e.g., monocrystal to polycrystal pn junction or heterojunction) 238
257/64 Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation) 407
257/74 Plural recrystallized semiconductor layers (e.g., "3-dimensional integrated circuit") 176
257/75 Recrystallized semiconductor material 242
257/73 Schottky barrier to polycrystalline semiconductor material 87

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
4200877 Temperature-compensated voltage reference diode with intermediate polycrystalline layer Apr. 29, 1980
4194212 Semicrystalline silicon article and method of making same Mar. 18, 1980
4161745 Semiconductor device having non-metallic connection zones Jul. 17, 1979
4146902 Irreversible semiconductor switching element and semiconductor memory device utilizing the same Mar. 27, 1979
4108684 Large grain thin film polycrystalline P-InP/n-Cds solar cell Aug. 22, 1978
4101341 CdSe-SnSe photovoltaic cell Jul. 18, 1978
4071378 Process of making a deep diode solid state transformer Jan. 31, 1978
4019195 Semi-conductor device capable of supporting high amperages of inverse current Apr. 19, 1977
3979820 Deep diode lead throughs Sep. 14, 1976
3975213 High voltage diodes Aug. 17, 1976
3943545 Low interelectrode leakage structure for charge-coupled devices Mar. 9, 1976

1 2 3 4 5 6 7

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