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Class Information
Number: 257/49
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction)
Description: Subject matter wherein there is an active junction (e.g., a junction between dissimilar materials, or a junction induced by an applied electric field, which exhibits non-linear current-voltage characteristics) and at least part of the active junction is formed by a semiconductor material in polycrystalline or amorphous form.










Sub-classes under this class:

Class Number Class Name Patents
257/52 Amorphous semiconductor material 374
257/66 Field effect device in non-single crystal, or recrystallized, semiconductor material 1,442
257/50 Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element) 339
257/65 Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., ge x si 1- x, polycrystalline silicon with dangling bond modifier) 315
257/51 Non-single crystal, or recrystallized, material forms active junction with single crystal material (e.g., monocrystal to polycrystal pn junction or heterojunction) 238
257/64 Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation) 407
257/74 Plural recrystallized semiconductor layers (e.g., "3-dimensional integrated circuit") 176
257/75 Recrystallized semiconductor material 242
257/73 Schottky barrier to polycrystalline semiconductor material 87


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
5962869 Semiconductor material and method for forming the same and thin film transistor Oct. 5, 1999
5959314 Polycrystalline silicon from the crystallization of microcrystalline silicon Sep. 28, 1999
5959313 Thin film semiconductor having a monocrystalline region containing carbon, nitrogen and oxygen and crystallization promotor metal component Sep. 28, 1999
5897358 Semiconductor device having fluorine-enhanced transistor with elevated active regions and fabrication thereof Apr. 27, 1999
5895934 Negative differential resistance device based on tunneling through microclusters, and method therefor Apr. 20, 1999
5895933 Semiconductor device and method for its preparation Apr. 20, 1999
5892246 Polysilicon TFT having exact alignment between the source/drain and the gate electrode Apr. 6, 1999
5883398 Device having a switch comprising a chromium layer and method for depositing chromium layers by sputtering Mar. 16, 1999
5847406 Thin film field effect transistor Dec. 8, 1998
5821562 Semiconductor device formed within asymetrically-shaped seed crystal region Oct. 13, 1998
5751016 Device having a switch comprising a chromium layer May. 12, 1998
5738942 Semiconductor silicon wafer and process for producing it Apr. 14, 1998
5734177 Semiconductor device, active-matrix substrate and method for fabricating the same Mar. 31, 1998
5712495 Semiconductor device including active matrix circuit Jan. 27, 1998
5700333 Thin-film photoelectric conversion device and a method of manufacturing the same Dec. 23, 1997
5696387 Thin film transistor in a liquid crystal display having a microcrystalline and amorphous active layers with an intrinsic semiconductor layer attached to same Dec. 9, 1997
5667597 Polycrystalline silicon semiconductor having an amorphous silicon buffer layer Sep. 16, 1997
5581091 Nanoelectric devices Dec. 3, 1996
5574294 Vertical dual gate thin film transistor with self-aligned gates / offset drain Nov. 12, 1996
5572044 Monocrystalline semiconductor commutator with grain boundry Nov. 5, 1996
5561303 Silicon on diamond circuit structure Oct. 1, 1996
5554861 Thin film transistors and active matrices including the same Sep. 10, 1996
5500538 Electro-optical device and method of driving the same Mar. 19, 1996
5481120 Semiconductor device and its fabrication method Jan. 2, 1996
5456763 Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon Oct. 10, 1995
5442199 Diamond hetero-junction rectifying element Aug. 15, 1995
5418395 Semiconductor light emitting device May. 23, 1995
5410176 Integrated circuit with planarized shallow trench isolation Apr. 25, 1995
5380372 Solar cell and method for manufacture thereof Jan. 10, 1995
5336918 Semiconductor pressure sensor and method of fabricating the same Aug. 9, 1994
5332913 Buried interconnect structure for semiconductor devices Jul. 26, 1994
5304828 Silicon layer having increased surface area and method for manufacturing Apr. 19, 1994
5285083 Inverted heterojunction bipolar device having undoped amorphous silicon layer Feb. 8, 1994
5266126 Semiconductor device and method for manufacturing the same Nov. 30, 1993
5254481 Polycrystalline solar cell manufacturing method Oct. 19, 1993
5247192 Heterojunction bipolar transistor Sep. 21, 1993
5242507 Impurity-induced seeding of polycrystalline semiconductors Sep. 7, 1993
5227315 Process of introduction and diffusion of platinum ions in a slice of silicon Jul. 13, 1993
5221365 Photovoltaic cell and method of manufacturing polycrystalline semiconductive film Jun. 22, 1993
5214497 Polycrystalline silicon resistor for use in a semiconductor integrated circuit having a memory device May. 25, 1993
5208478 Detector interface device May. 4, 1993
5206534 Photocell Apr. 27, 1993
5204988 MOS semiconductor device having a surge protecting element Apr. 20, 1993
5189508 Silicon wafer excelling in gettering ability and method for production thereof Feb. 23, 1993
5182627 Interconnect and resistor for integrated circuits Jan. 26, 1993
5177582 CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same Jan. 5, 1993
5168337 Polycrystalline diode and a method for making the same Dec. 1, 1992
5132770 Semiconductor device having improved multi-layered substrate structure Jul. 21, 1992
5105254 Rod assembly for manufacturing large wafer for electronic devices Apr. 14, 1992
5094964 Method for manufacturing a bipolar semiconductor device Mar. 10, 1992

1 2 3 4 5 6 7










 
 
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