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Class Information
Number: 257/489
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > Field relief electrode > Resistive
Description: Subject matter wherein the field relief electrode is a high resistance layer adapted to have a current flow therethrough and a corresponding voltage variation therein.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
5994189 High withstand voltage semiconductor device and manufacturing method thereof Nov. 30, 1999
5898199 Semiconductor device and power converter using same Apr. 27, 1999
5880513 Asymmetric snubber resistor Mar. 9, 1999
5872383 Semiconductor device and method of manufacturing the same Feb. 16, 1999
5864167 Semiconductor device Jan. 26, 1999
5844293 Semiconductor device with improved dielectric breakdown strength Dec. 1, 1998
5691553 Semiconductor device and power converter using same Nov. 25, 1997
5637908 Structure and technique for tailoring effective resistivity of a SIPOS layer by patterning and control of dopant introduction Jun. 10, 1997
5627385 Lateral silicon carbide transistor May. 6, 1997
5554878 Intergrated high-voltage resistor including field-plate layers Sep. 10, 1996
5552625 Semiconductor device having a semi-insulating layer Sep. 3, 1996
5541439 Layout for a high voltage darlington pair Jul. 30, 1996
5534726 Semiconductor device provided with status detecting function Jul. 9, 1996
5498899 Spiral resistor integrated on a semiconductor substrate Mar. 12, 1996
5466959 Semiconductor device for influencing the breakdown voltage of transistors Nov. 14, 1995
5449925 Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices Sep. 12, 1995
5382826 Stacked high voltage transistor unit Jan. 17, 1995
5382825 Spiral edge passivation structure for semiconductor devices Jan. 17, 1995
5347155 Semiconductor device having a lateral DMOST with breakdown voltage raising zones and provisions for exchanging charge with the back gate region Sep. 13, 1994
5315139 Power semiconductor integrated circuit device without concentration of electric field May. 24, 1994
5231301 Semiconductor sensor with piezoresistors and improved electrostatic structures Jul. 27, 1993
5208471 Semiconductor device and manufacturing method therefor May. 4, 1993
5196723 Integrated circuit screen arrangement and a method for its manufacture Mar. 23, 1993
5148240 High voltage, high speed schottky semiconductor device and method of fabrication Sep. 15, 1992
5113237 Planar pn-junction of high electric strength May. 12, 1992
5105234 Electroluminescent diode having a low capacitance Apr. 14, 1992
5086332 Planar semiconductor device having high breakdown voltage Feb. 4, 1992
5060047 High voltage semiconductor device Oct. 22, 1991
5027166 High voltage, high speed Schottky semiconductor device and method of fabrication Jun. 25, 1991
4994891 Shielded transistor device Feb. 19, 1991
4980749 P-N junction semiconductor device and method of fabrication Dec. 25, 1990
4918494 Thin film transistor Apr. 17, 1990
4890150 Dielectric passivation Dec. 26, 1989
4879586 Semiconductor component Nov. 7, 1989
4827324 Implantation of ions into an insulating layer to increase planar pn junction breakdown voltage May. 2, 1989
4825280 Electrostatic discharge protection for semiconductor devices Apr. 25, 1989
4746967 Semiconductor device May. 24, 1988
4707719 Semiconductor device having an annular region for improved voltage characteristics Nov. 17, 1987
4707720 Semiconductor memory device Nov. 17, 1987
4691224 Planar semiconductor device with dual conductivity insulating layers over guard rings Sep. 1, 1987
4691223 Semiconductor device having high breakdown voltage Sep. 1, 1987
4602266 High voltage guard ring with variable width shallow portion Jul. 22, 1986
4590509 MIS high-voltage element with high-resistivity gate and field-plate May. 20, 1986
4580156 Structured resistive field shields for low-leakage high voltage devices Apr. 1, 1986
4319262 Integrated-circuit structure including lateral PNP transistor with polysilicon layer bridging gap in collector field relief electrode Mar. 9, 1982
4270137 Field-effect devices May. 26, 1981
4157563 Semiconductor device Jun. 5, 1979
4009483 Implementation of surface sensitive semiconductor devices Feb. 22, 1977
4001873 Semiconductor device Jan. 4, 1977
3977019 Semiconductor integrated circuit Aug. 24, 1976

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