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Class Information
Number: 257/488
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > Field relief electrode
Description: Subject matter wherein the means to increase breakdown voltage comprises an electrode insulated from the semiconductor material of the active solid-state device, and configured so as to reduce the electric field strength at a given voltage applied to the device.










Sub-classes under this class:

Class Number Class Name Patents
257/490 Combined with floating pn junction guard region 134
257/489 Resistive 101


Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8710616 Die seal ring Apr. 29, 2014
8692294 Semiconductor devices with field plates Apr. 8, 2014
8680607 Trench gated power device with multiple trench width and its fabrication process Mar. 25, 2014
8643135 Edge termination configurations for high voltage semiconductor power devices Feb. 4, 2014
8637385 High voltage durability transistor and method for fabricating same Jan. 28, 2014
8614465 Electronic device and manufacturing method Dec. 24, 2013
8592867 Wide bandgap HEMTS with source connected field plates Nov. 26, 2013
8581359 Schottky barrier diode Nov. 12, 2013
8564057 Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield Oct. 22, 2013
8558315 Trench isolation MOS P-N junction diode device and method for manufacturing the same Oct. 15, 2013
8558342 Semiconductor device Oct. 15, 2013
8552493 Segmented pillar layout for a high-voltage vertical transistor Oct. 8, 2013
8552496 High-voltage vertical transistor with edge termination structure Oct. 8, 2013
8541813 Homojunction type high-speed photodiode Sep. 24, 2013
8530936 Semiconductor device Sep. 10, 2013
8476732 Semiconductor device Jul. 2, 2013
8431965 Control circuit of transistor and method Apr. 30, 2013
8399948 Light emitting device, light emitting device package and lighting system Mar. 19, 2013
8390030 Nitride semiconductor device Mar. 5, 2013
8384183 Integrated hall effect element having a germanium hall plate Feb. 26, 2013
8362576 Transistor with reduced depletion field width Jan. 29, 2013
8357985 Bipolar transistor with guard region Jan. 22, 2013
8350352 Bipolar transistor Jan. 8, 2013
8314471 Trench devices having improved breakdown voltages and method for manufacturing same Nov. 20, 2012
8293614 High performance LDMOS device having enhanced dielectric strain layer Oct. 23, 2012
8264057 Semiconductor device driving bridge-connected power transistor Sep. 11, 2012
8237196 Semiconductor device Aug. 7, 2012
8232593 Power semiconductor device Jul. 31, 2012
8222691 Gate pullback at ends of high-voltage vertical transistor structure Jul. 17, 2012
8188574 Pedestal guard ring having continuous M1 metal barrier connected to crack stop May. 29, 2012
8174048 III-nitride current control device and method of manufacture May. 8, 2012
8173510 Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric May. 8, 2012
8159024 High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance Apr. 17, 2012
8148783 Semiconductor device Apr. 3, 2012
8143679 Termination structure for power devices Mar. 27, 2012
8120136 Bipolar transistor Feb. 21, 2012
8120064 Wide bandgap transistor devices with field plates Feb. 21, 2012
8110888 Edge termination for high voltage semiconductor device Feb. 7, 2012
8080858 Semiconductor component having a space saving edge structure Dec. 20, 2011
8076749 Semiconductor device Dec. 13, 2011
8048765 Method for fabricating a MOS transistor with source/well heterojunction and related structure Nov. 1, 2011
7999287 Lateral HEMT and method for the production of a lateral HEMT Aug. 16, 2011
7973382 Semiconductor device Jul. 5, 2011
7915644 Wide bandgap HEMTs with source connected field plates Mar. 29, 2011
7888732 Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric Feb. 15, 2011
7875951 Semiconductor with active component and method for manufacture Jan. 25, 2011
7833876 Semiconductor device having multiple element formation regions and manufacturing method thereof Nov. 16, 2010
RE41866 Semiconductor device and method of fabricating same Oct. 26, 2010
7816731 Segmented pillar layout for a high-voltage vertical transistor Oct. 19, 2010
7791132 High-voltage vertical transistor with a multi-gradient drain doping profile Sep. 7, 2010

1 2 3 4 5 6










 
 
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