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Class Information
Number: 257/488
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold > Field relief electrode
Description: Subject matter wherein the means to increase breakdown voltage comprises an electrode insulated from the semiconductor material of the active solid-state device, and configured so as to reduce the electric field strength at a given voltage applied to the device.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7427800 |
Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics |
Sep. 23, 2008 |
| 7397083 |
Trench fet with self aligned source and contact |
Jul. 8, 2008 |
| 7388236 |
High efficiency and/or high power density wide bandgap transistors |
Jun. 17, 2008 |
| 7385273 |
Power semiconductor device |
Jun. 10, 2008 |
| 7361964 |
Surface acoustic wave device with electro-static discharge protection |
Apr. 22, 2008 |
| 7335944 |
High-voltage vertical transistor with a multi-gradient drain doping profile |
Feb. 26, 2008 |
| 7327007 |
Semiconductor device with high breakdown voltage |
Feb. 5, 2008 |
| 7304356 |
IGBT or like semiconductor device of high voltage-withstanding capability |
Dec. 4, 2007 |
| 7253486 |
Field plate transistor with reduced field plate resistance |
Aug. 7, 2007 |
| 7221011 |
High-voltage vertical transistor with a multi-gradient drain doping profile |
May. 22, 2007 |
| 7187056 |
Radiation hardened bipolar junction transistor |
Mar. 6, 2007 |
| 7161208 |
Trench mosfet with field relief feature |
Jan. 9, 2007 |
| 7161194 |
High power density and/or linearity transistors |
Jan. 9, 2007 |
| 7148540 |
Graded conductive structure for use in a metal-oxide-semiconductor device |
Dec. 12, 2006 |
| 7135742 |
Insulated gate type semiconductor device and method for fabricating same |
Nov. 14, 2006 |
| 7122875 |
Semiconductor device |
Oct. 17, 2006 |
| 7109562 |
High voltage laterally double-diffused metal oxide semiconductor |
Sep. 19, 2006 |
| 7075125 |
Power semiconductor device |
Jul. 11, 2006 |
| 7067877 |
MIS-type semiconductor device |
Jun. 27, 2006 |
| 7019392 |
Storage apparatus, card type storage apparatus, and electronic apparatus |
Mar. 28, 2006 |
| 7015557 |
Hall element with segmented field plate |
Mar. 21, 2006 |
| 6987299 |
High-voltage lateral transistor with a multi-layered extended drain structure |
Jan. 17, 2006 |
| 6972460 |
Semiconductor device and manufacturing method thereof |
Dec. 6, 2005 |
| 6946685 |
Light emitting semiconductor method and device |
Sep. 20, 2005 |
| 6917076 |
Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor device |
Jul. 12, 2005 |
| 6911687 |
Buried bit line-field isolation defined active semiconductor areas |
Jun. 28, 2005 |
| 6878992 |
Vertical-type power MOSFET with a gate formed in a trench |
Apr. 12, 2005 |
| 6879005 |
High withstand voltage semiconductor device |
Apr. 12, 2005 |
| 6872999 |
Semiconductor storage device with signal wiring lines RMED above memory cells |
Mar. 29, 2005 |
| 6853033 |
Power MOSFET having enhanced breakdown voltage |
Feb. 8, 2005 |
| 6833583 |
Edge termination in a trench-gate MOSFET |
Dec. 21, 2004 |
| 6831332 |
Microwave field effect transistor structure |
Dec. 14, 2004 |
| 6831345 |
High withstand voltage semiconductor device |
Dec. 14, 2004 |
| 6828629 |
Semiconductor device and method of fabricating the same |
Dec. 7, 2004 |
| 6828645 |
Voltage withstanding structure for a semiconductor device |
Dec. 7, 2004 |
| 6815793 |
Body of a semiconductor material with a reduced mean free path length |
Nov. 9, 2004 |
| 6815293 |
High-voltage lateral transistor with a multi-layered extended drain structure |
Nov. 9, 2004 |
| 6798020 |
High-voltage lateral transistor with a multi-layered extended drain structure |
Sep. 28, 2004 |
| 6750506 |
High-voltage semiconductor device |
Jun. 15, 2004 |
| 6724021 |
Semiconductor devices and their peripheral termination |
Apr. 20, 2004 |
| 6717192 |
Schottky gate field effect transistor |
Apr. 6, 2004 |
| 6680515 |
Lateral high voltage transistor having spiral field plate and graded concentration doping |
Jan. 20, 2004 |
| 6677657 |
High-voltage periphery |
Jan. 13, 2004 |
| 6670688 |
Semiconductor device including at least one schottky metal layer surrounding PN junction |
Dec. 30, 2003 |
| 6667529 |
Semiconductor device |
Dec. 23, 2003 |
| 6664593 |
Field effect transistor structure and method of manufacture |
Dec. 16, 2003 |
| 6642551 |
Stable high voltage semiconductor device structure |
Nov. 4, 2003 |
| 6617652 |
High breakdown voltage semiconductor device |
Sep. 9, 2003 |
| 6614088 |
Breakdown improvement method and sturcture for lateral DMOS device |
Sep. 2, 2003 |
| 6608351 |
Semiconductor device comprising a high-voltage circuit element |
Aug. 19, 2003 |
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