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Class Information
Number: 257/487
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold
Description: Subject matter wherein the device is provided with means to increase the voltage that may be applied thereto without causing electrical breakdown.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7411272 |
Semiconductor device and method of forming a semiconductor device |
Aug. 12, 2008 |
| 7355257 |
Semiconductor superjunction device |
Apr. 8, 2008 |
| 7355261 |
Thin film device, thin film device module, and method of forming thin film device module |
Apr. 8, 2008 |
| 7327007 |
Semiconductor device with high breakdown voltage |
Feb. 5, 2008 |
| 7327008 |
Structure and method for mixed-substrate SIMOX technology |
Feb. 5, 2008 |
| 7321142 |
Field effect transistor |
Jan. 22, 2008 |
| 7304356 |
IGBT or like semiconductor device of high voltage-withstanding capability |
Dec. 4, 2007 |
| 7301179 |
Semiconductor device having a high breakdown voltage transistor formed thereon |
Nov. 27, 2007 |
| 7279767 |
Semiconductor structure with high-voltage sustaining capability and fabrication method of the same |
Oct. 9, 2007 |
| 7279768 |
Semiconductor device for overvoltage protection |
Oct. 9, 2007 |
| 7259440 |
Fast switching diode with low leakage current |
Aug. 21, 2007 |
| 7244975 |
High-voltage device structure |
Jul. 17, 2007 |
| 7230310 |
Super-junction voltage sustaining layer with alternating semiconductor and High-K dielectric regions |
Jun. 12, 2007 |
| 7180133 |
Method and structure for addressing hot carrier degradation in high voltage devices |
Feb. 20, 2007 |
| 7135751 |
High breakdown voltage junction terminating structure |
Nov. 14, 2006 |
| 7106628 |
Semiconductor device having enhanced breakdown voltage |
Sep. 12, 2006 |
| 7081656 |
CMOS constructions |
Jul. 25, 2006 |
| 7064399 |
Advanced CMOS using super steep retrograde wells |
Jun. 20, 2006 |
| 7049663 |
ESD protection device with high voltage and negative voltage tolerance |
May. 23, 2006 |
| 6989566 |
High-voltage semiconductor device including a floating block |
Jan. 24, 2006 |
| 6921945 |
Semiconductor device with structure for improving breakdown voltage |
Jul. 26, 2005 |
| 6900518 |
Semiconductor device |
May. 31, 2005 |
| 6873012 |
SOI component |
Mar. 29, 2005 |
| 6847080 |
Semiconductor device with high and low breakdown voltage and its manufacturing method |
Jan. 25, 2005 |
| 6847081 |
Dual gate oxide high-voltage semiconductor device |
Jan. 25, 2005 |
| 6828605 |
Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component |
Dec. 7, 2004 |
| 6815793 |
Body of a semiconductor material with a reduced mean free path length |
Nov. 9, 2004 |
| 6768170 |
Superjunction device with improved avalanche capability and breakdown voltage |
Jul. 27, 2004 |
| 6740952 |
High withstand voltage semiconductor device |
May. 25, 2004 |
| 6724021 |
Semiconductor devices and their peripheral termination |
Apr. 20, 2004 |
| 6717230 |
Lateral device with improved conductivity and blocking control |
Apr. 6, 2004 |
| 6703684 |
Semiconductor device and method of forming a semiconductor device |
Mar. 9, 2004 |
| 6696741 |
High breakdown voltage PN junction structure, and related manufacturing process |
Feb. 24, 2004 |
| 6683363 |
Trench structure for semiconductor devices |
Jan. 27, 2004 |
| 6653669 |
Device for the adjustment of circuits after packaging |
Nov. 25, 2003 |
| 6649995 |
Semiconductor device and method of manufacturing the same |
Nov. 18, 2003 |
| 6621116 |
Enhanced EPROM structures with accentuated hot electron generation regions |
Sep. 16, 2003 |
| 6607972 |
Method for producing an edge termination suitable for high voltages in a basic material wafer prefabricated according to the principle of lateral charge compensation |
Aug. 19, 2003 |
| 6600206 |
High voltage semiconductor device having high breakdown voltage isolation region |
Jul. 29, 2003 |
| 6583453 |
Semiconductor device having a voltage-regulator device |
Jun. 24, 2003 |
| 6486541 |
Semiconductor device and fabrication method |
Nov. 26, 2002 |
| 6476457 |
Semiconductor device with drift layer |
Nov. 5, 2002 |
| 6469359 |
Semiconductor device and a method for production thereof |
Oct. 22, 2002 |
| 6462382 |
MOS type semiconductor apparatus |
Oct. 8, 2002 |
| 6445054 |
Semiconductor device |
Sep. 3, 2002 |
| 6439514 |
Semiconductor device with elements surrounded by trenches |
Aug. 27, 2002 |
| 6429501 |
Semiconductor device having high breakdown voltage and method for manufacturing the device |
Aug. 6, 2002 |
| 6414358 |
Arrangements to reduce charging damage in structures of integrated circuits |
Jul. 2, 2002 |
| 6396084 |
Structure of semiconductor rectifier |
May. 28, 2002 |
| 6373082 |
Compound semiconductor field effect transistor |
Apr. 16, 2002 |
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