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Class Information
Number: 257/487
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With means to increase breakdown voltage threshold
Description: Subject matter wherein the device is provided with means to increase the voltage that may be applied thereto without causing electrical breakdown.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8710617 |
Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation region |
Apr. 29, 2014 |
| 8692318 |
Trench MOS structure and method for making the same |
Apr. 8, 2014 |
| 8686530 |
Electronic component and a method of manufacturing an electronic component |
Apr. 1, 2014 |
| 8680607 |
Trench gated power device with multiple trench width and its fabrication process |
Mar. 25, 2014 |
| 8642987 |
Semiconductor device and manufacturing method thereof |
Feb. 4, 2014 |
| 8637385 |
High voltage durability transistor and method for fabricating same |
Jan. 28, 2014 |
| 8633561 |
Termination for a superjunction device |
Jan. 21, 2014 |
| 8618557 |
Wide-band-gap reverse-blocking MOS-type semiconductor device |
Dec. 31, 2013 |
| 8592923 |
Coupling well structure for improving HVMOS performance |
Nov. 26, 2013 |
| 8575694 |
Insulated gate bipolar transistor structure having low substrate leakage |
Nov. 5, 2013 |
| 8569150 |
Method for producing a semiconductor device with a semiconductor body |
Oct. 29, 2013 |
| 8558315 |
Trench isolation MOS P-N junction diode device and method for manufacturing the same |
Oct. 15, 2013 |
| 8546906 |
System and method for packaging of high-voltage semiconductor devices |
Oct. 1, 2013 |
| 8525289 |
Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization |
Sep. 3, 2013 |
| 8497167 |
EDS protection diode with pwell-nwell resurf |
Jul. 30, 2013 |
| 8476698 |
Corner layout for superjunction device |
Jul. 2, 2013 |
| 8471337 |
Integrated circuit |
Jun. 25, 2013 |
| 8431460 |
Method for fabricating semiconductor device |
Apr. 30, 2013 |
| 8395244 |
Fast recovery diode |
Mar. 12, 2013 |
| 8390092 |
Area-efficient high voltage bipolar-based ESD protection targeting narrow design windows |
Mar. 5, 2013 |
| 8384163 |
Layout design tool for semiconductor integrated circuit |
Feb. 26, 2013 |
| 8299578 |
High voltage bipolar transistor with bias shield |
Oct. 30, 2012 |
| 8294235 |
Edge termination with improved breakdown voltage |
Oct. 23, 2012 |
| 8241973 |
Method for increasing penetration depth of drain and source implantation species for a given gate height |
Aug. 14, 2012 |
| 8212322 |
Techniques for enabling multiple V.sub.t devices using high-K metal gate stacks |
Jul. 3, 2012 |
| 8143679 |
Termination structure for power devices |
Mar. 27, 2012 |
| 8138569 |
Guard ring structures and method of fabricating thereof |
Mar. 20, 2012 |
| 8097925 |
Integrated circuit guard rings |
Jan. 17, 2012 |
| 8093676 |
Semiconductor component including an edge termination having a trench and method for producing |
Jan. 10, 2012 |
| 8080858 |
Semiconductor component having a space saving edge structure |
Dec. 20, 2011 |
| 8076695 |
Semiconductor device |
Dec. 13, 2011 |
| 8076748 |
Semiconductor device |
Dec. 13, 2011 |
| 8076749 |
Semiconductor device |
Dec. 13, 2011 |
| 8063467 |
Semiconductor structure and method of manufacture |
Nov. 22, 2011 |
| 8053859 |
Semiconductor device and the method of manufacturing the same |
Nov. 8, 2011 |
| 8049295 |
Coupling well structure for improving HVMOS performance |
Nov. 1, 2011 |
| 8034700 |
Method of fabricating a diode |
Oct. 11, 2011 |
| 8024139 |
Method and computer code for statistical process control for censored production data |
Sep. 20, 2011 |
| 8018022 |
Guard ring structures and method of fabricating thereof |
Sep. 13, 2011 |
| 8013381 |
Semiconductor device |
Sep. 6, 2011 |
| 7973382 |
Semiconductor device |
Jul. 5, 2011 |
| 7936042 |
Field effect transistor containing a wide band gap semiconductor material in a drain |
May. 3, 2011 |
| 7923804 |
Edge termination with improved breakdown voltage |
Apr. 12, 2011 |
| 7915676 |
Integrated circuit |
Mar. 29, 2011 |
| 7911020 |
Semiconductor device having breakdown voltage maintaining structure and its manufacturing method |
Mar. 22, 2011 |
| 7888767 |
Structures of high-voltage MOS devices with improved electrical performance |
Feb. 15, 2011 |
| 7884426 |
Layout design method of semiconductor integrated circuit having well supplied with potential different from substrate potential |
Feb. 8, 2011 |
| 7855427 |
Semiconductor device with a plurality of isolated conductive films |
Dec. 21, 2010 |
| 7838969 |
Diode |
Nov. 23, 2010 |
| 7825487 |
Guard ring structures and method of fabricating thereof |
Nov. 2, 2010 |
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