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Class Information
Number: 257/486
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Schottky barrier > Specified materials > Layered (e.g., a diffusion barrier material layer or a silicide layer or a precious metal layer)
Description: Subject matter wherein the material, e.g., metal, which forms the Schottky barrier is comprised of layers, for example, a diffusion barrier material layer or a silicide layer or a precious metal layer.


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
7453133 Silicide/semiconductor structure and method of fabrication Nov. 18, 2008
7436039 Gallium nitride semiconductor device Oct. 14, 2008
7435670 Bit line barrier metal layer for semiconductor device and process for preparing the same Oct. 14, 2008
7432559 Silicide formation on SiGe Oct. 7, 2008
7405458 Asymmetric field transistors (FETs) Jul. 29, 2008
7391089 Semiconductor device and method of manufacturing the same Jun. 24, 2008
7332785 Dye-sensitized solar cell Feb. 19, 2008
7332782 Dye-sensitized solar cell Feb. 19, 2008
7329937 Asymmetric field effect transistors (FETs) Feb. 12, 2008
7315068 Interface layer for the fabrication of electronic devices Jan. 1, 2008
7312507 Sensitizing dye solar cell Dec. 25, 2007
7276796 Formation of oxidation-resistant seed layer for interconnect applications Oct. 2, 2007
7274082 Chemical sensor using chemically induced electron-hole production at a schottky barrier Sep. 25, 2007
7253486 Field plate transistor with reduced field plate resistance Aug. 7, 2007
7214988 Metal oxide semiconductor transistor May. 8, 2007
7176537 High performance CMOS with metal-gate and Schottky source/drain Feb. 13, 2007
7098676 Multi-functional structure for enhanced chip manufacturibility and reliability for low k dielectrics semiconductors and a crackstop integrity screen and monitor Aug. 29, 2006
7078783 Vertical unipolar component Jul. 18, 2006
7071526 Semiconductor device having Schottky junction electrode Jul. 4, 2006
7071525 Merged P-i-N schottky structure Jul. 4, 2006
7064407 JFET controlled schottky barrier diode Jun. 20, 2006
6998694 High switching speed two mask Schottky diode with high field breakdown Feb. 14, 2006
6963121 Schottky-barrier tunneling transistor Nov. 8, 2005
6956276 Semiconductor device with an L-shaped/reversed L-shaped gate side-wall insulating film Oct. 18, 2005
6936906 Integration of barrier layer and seed layer Aug. 30, 2005
6897540 Microelectronic device fabricating method, integrated circuit, and intermediate construction May. 24, 2005
6891244 Plug structure having low contact resistance and method of manufacturing May. 10, 2005
6885077 Schottky diode Apr. 26, 2005
6878994 MOSgated device with accumulated channel region and Schottky contact Apr. 12, 2005
6873050 Intermediate construction having an edge defined feature Mar. 29, 2005
6858904 High aspect ratio contact structure with reduced silicon consumption Feb. 22, 2005
6855999 Schottky diode having a shallow trench contact structure for preventing junction leakage Feb. 15, 2005
6853032 Structure and method for formation of a blocked silicide resistor Feb. 8, 2005
6846729 Process for counter doping N-type silicon in Schottky device Ti silicide barrier Jan. 25, 2005
6828614 Semiconductor constructions, and methods of forming semiconductor constructions Dec. 7, 2004
6818319 Diffusion barrier multi-layer structure for thin film transistor liquid crystal displays and process for fabricating thereof Nov. 16, 2004
6791154 Integrated semiconductor circuit device having Schottky barrier diode Sep. 14, 2004
6791121 Semiconductor device and method of manufacturing the same Sep. 14, 2004
6777328 Method of forming multilayered conductive layers for semiconductor device Aug. 17, 2004
6744111 Schottky-barrier tunneling transistor Jun. 1, 2004
6744105 Memory array having shallow bit line with silicide contact portion and method of formation Jun. 1, 2004
6707128 Vertical MISFET transistor surrounded by a Schottky barrier diode with a common source and anode electrode Mar. 16, 2004
6633071 Contact on a P-type region Oct. 14, 2003
6614083 Wiring material and a semiconductor device having wiring using the material, and the manufacturing method Sep. 2, 2003
6603180 Semiconductor device having large-area silicide layer and process of fabrication thereof Aug. 5, 2003
6576964 Dielectric layer for a semiconductor device having less current leakage and increased capacitance Jun. 10, 2003
6573583 Semiconductor device and method of manufacturing the same Jun. 3, 2003
6538325 Multi-layer conductor system with intermediate buffer layer for improved adhesion to dielectrics Mar. 25, 2003
6528365 Semiconductor memory device and method for manufacturing the same Mar. 4, 2003
6525389 High voltage termination with amorphous silicon layer below the field plate Feb. 25, 2003

1 2 3 4


 
 
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