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Class Information
Number: 257/485
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Schottky barrier > Specified materials
Description: Subject matter wherein the Schottky barrier device uses a material of specified composition.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615839 |
Semiconductor device and manufacturing method thereof |
Nov. 10, 2009 |
| 7612426 |
Schottky barrier diode and diode array |
Nov. 3, 2009 |
| 7476956 |
Gallium nitride based diodes with low forward voltage and low reverse current operation |
Jan. 13, 2009 |
| 7470940 |
Ultraviolet detector |
Dec. 30, 2008 |
| 7462860 |
Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
Dec. 9, 2008 |
| 7453133 |
Silicide/semiconductor structure and method of fabrication |
Nov. 18, 2008 |
| 7449710 |
Vacuum jacket for phase change memory element |
Nov. 11, 2008 |
| 7436039 |
Gallium nitride semiconductor device |
Oct. 14, 2008 |
| 7388271 |
Schottky diode with minimal vertical current flow |
Jun. 17, 2008 |
| 7388272 |
Chip package and producing method thereof |
Jun. 17, 2008 |
| 7368762 |
Heterojunction photodiode |
May. 6, 2008 |
| 7345350 |
Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias |
Mar. 18, 2008 |
| 7274082 |
Chemical sensor using chemically induced electron-hole production at a schottky barrier |
Sep. 25, 2007 |
| 7262434 |
Semiconductor device with a silicon carbide substrate and ohmic metal layer |
Aug. 28, 2007 |
| 7211824 |
Organic semiconductor diode |
May. 1, 2007 |
| 7193291 |
Organic Schottky diode |
Mar. 20, 2007 |
| 7176537 |
High performance CMOS with metal-gate and Schottky source/drain |
Feb. 13, 2007 |
| 7141861 |
Semiconductor device and manufacturing method there |
Nov. 28, 2006 |
| 7105907 |
Gallium nitride compound semiconductor device having schottky contact |
Sep. 12, 2006 |
| 7084475 |
Lateral conduction Schottky diode with plural mesas |
Aug. 1, 2006 |
| 7084423 |
Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
Aug. 1, 2006 |
| 7071525 |
Merged P-i-N schottky structure |
Jul. 4, 2006 |
| 7071526 |
Semiconductor device having Schottky junction electrode |
Jul. 4, 2006 |
| 7061067 |
Schottky barrier diode |
Jun. 13, 2006 |
| 7023030 |
MISFET |
Apr. 4, 2006 |
| 6969900 |
Semiconductor diode capable of detecting hydrogen at high temperatures |
Nov. 29, 2005 |
| 6960782 |
Electronic devices with fullerene layers |
Nov. 1, 2005 |
| 6949401 |
Semiconductor component and method for producing the same |
Sep. 27, 2005 |
| 6949806 |
Electrostatic discharge protection structure for deep sub-micron gate oxide |
Sep. 27, 2005 |
| 6936906 |
Integration of barrier layer and seed layer |
Aug. 30, 2005 |
| 6936840 |
Phase-change memory cell and method of fabricating the phase-change memory cell |
Aug. 30, 2005 |
| 6885077 |
Schottky diode |
Apr. 26, 2005 |
| 6846731 |
Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films |
Jan. 25, 2005 |
| 6791154 |
Integrated semiconductor circuit device having Schottky barrier diode |
Sep. 14, 2004 |
| 6787871 |
Integrated schottky barrier diode and manufacturing method thereof |
Sep. 7, 2004 |
| 6674099 |
MISFET |
Jan. 6, 2004 |
| 6653707 |
Low leakage Schottky diode |
Nov. 25, 2003 |
| 6633071 |
Contact on a P-type region |
Oct. 14, 2003 |
| 6627967 |
Schottky barrier diode |
Sep. 30, 2003 |
| 6610999 |
Multiple stage high power diode |
Aug. 26, 2003 |
| 6605868 |
Insulating substrate including multilevel insulative ceramic layers joined with an intermediate layer |
Aug. 12, 2003 |
| 6580141 |
Trench schottky rectifier |
Jun. 17, 2003 |
| 6576973 |
Schottky diode on a silicon carbide substrate |
Jun. 10, 2003 |
| 6551911 |
Method for producing Schottky diodes and Schottky diodes |
Apr. 22, 2003 |
| 6545298 |
Compound semiconductor rectifier device structure |
Apr. 8, 2003 |
| 6525389 |
High voltage termination with amorphous silicon layer below the field plate |
Feb. 25, 2003 |
| 6509651 |
Substrate-fluorescent LED |
Jan. 21, 2003 |
| 6501145 |
Semiconductor component and method for producing the same |
Dec. 31, 2002 |
| 6498381 |
Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same |
Dec. 24, 2002 |
| 6486524 |
Ultra low Irr fast recovery diode |
Nov. 26, 2002 |
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